Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

We study the photoluminescence internal quantum efficiency (IQE) and recombination dynamics in a pair of polar and non-polar InGaN/GaN quantum well (QW) light-emitting diode (LED) structures as a function of excess carrier density and temperature. In the polar LED at 293 K, the variation of radiative and non-radiative lifetimes is well described by a modified ABC type model which accounts for the background carrier concentration in the QWs due to unintentional doping. As the temperature is reduced, the sensitivity of the radiative lifetime to excess carrier density becomes progressively weaker. We attribute this behaviour to the reduced mobility of the localised electrons and holes at low temperatures, resulting in a more monomolecular like radiative process. Thus we propose that in polar QWs, the degree of carrier localisation determines the sensitivity of the radiative lifetime to the excess carrier density. In the non-polar LED, the radiative lifetime is independent of excitation density at room temperature, consistent with a wholly excitonic recombination mechanism. These findings have significance for the interpretation of LED efficiency data within the context of the ABC recombination model

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

Solid-state single photon sources with polarisation control operating beyond the Peltier cooling barrier of 200 K are desirable for a variety of applications in quantum technology. Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g((2))(0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

© 2017 Author(s). Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates considerably. One solution is to grow quantum dots on a non-polar plane; this gives the additional advantage of strongly polarized emission along one crystal direction. This is highly desirable for future device applications, as is electrical excitation. Here, we report on electroluminescence from non-polar InGaN quantum dots. The emission from one of these quantum dots is studied in detail and found to be highly polarized with a degree of polarization of 0.94. Single-photon emission is achieved under excitation with a constant current giving a g(2)(0) correlation value of 0.18. The quantum dot electroluminescence persists up to temperatures as high as 130 K

Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE

Non-polar a-plane gallium nitride (GaN) lms have been grown on r-plane (1102) sapphire by metal organic vapour phase epitaxy (MOVPE). A total of ve in-situ defect reduction techniques for a-plane GaN are compared, including two variants with a low temperature GaN nucleation layer (LTNL) and three variants without LTNL, in which the high- temperature growth of GaN is performed directly on the sapphire using various crystallite sizes. The material quality is investigated by photoluminescence (PL), x-ray di raction, cathodoluminescence, atomic force and optical microscopy. It is found that all layers are anisotropically strained with threading dislocation densities over 109 cm2. The PL spectrum is typically dominated by emission from basal plane stacking faults. Overall, growth techniques without LTNL do not yield any particular improvement and even result in the creation of new defects, ie. inversion domains, which are seldom observed if a low temperature GaN nucleation layer is used. The best growth method uses a LTNL combined with a single silicon nitride interlayer.This work is supported by the Engineering and Physical Sciences Research Council (United Kingdom) under EP/J003603/1 and EP/H0495331. The European Research Council has also provided nancial support under the European Community's Seventh Framework Programme (FP7/2007-2013) / ERC grant agreement no 279361 (MACONS).This is the final published version, also available from Elsevier at: http://dx.doi.org/10.1016/j.jcrysgro.2014.09.00

Humanising the mouse genome piece by piece

To better understand human health and disease, researchers create a wide variety of mouse models that carry human DNA. With recent advances in genome engineering, the targeted replacement of mouse genomic regions with orthologous human sequences has become increasingly viable, ranging from finely tuned humanisation of individual nucleotides and amino acids to the incorporation of many megabases of human DNA. Here, we examine emerging technologies for targeted genomic humanisation, we review the spectrum of existing genomically humanised mouse models and the insights such models have provided, and consider the lessons learned for designing such models in the future

Defects in III-nitride microdisk cavities

Nitride microcavities offer an exceptional platform for the investigation of light-matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Microdisk geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we review the effect of defects on the properties of nitride microdisk cavities fabricated using photoelectrochemical (PEC) etching of an InGaN sacrificial superlattice (SSL). Threading dislocations originating from either the original GaN pseudosubstrate are shown to hinder the undercutting of microdisk cavities during the photoelectric chemical (PEC) etching process resulting in whiskers of unetched material on the underside of microdisks. The unetched whiskers provide a pathway for light to escape, reducing microdisk Q-factor if located in the region occupied by the WGMs. Additionally, dislocations can affect the spectral stability of quantum dot emitters, thus hindering their effective integration in microdisk cavities. Though dislocations are clearly undesirable, the limiting factor on nitride microdisk Q-factor is expected to be internal absorption, indicating that the further optimisation of nitride microdisk cavities must incorporate both the elimination of dislocations and careful tailoring of the active region emission wavelength and background doping levels.The original research shown in this article has been funded by the European Research Council under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ ERC grant agreement no. 279361 (MACONS). RAO acknowledges the Royal Academy of Engineering Leverhulme Trust Senior Research Fellowship scheme.This is the author accepted manuscript. The final version is available from the Institute of Physics via https://doi.org/10.1088/1361-6641/32/3/03300

Nitride Single Photon Sources

Single photon sources are a key enabling technology for quantum communications, and in the future more advanced quantum light sources may underpin other quantum information processing paradigms such as linear optical quantum computation. In considering possible practical implementations of future quantum technologies, the nitride materials system is attractive since nitride quantum dots (QDs) achieve single photon emission at easily accessible temperatures [1], potentially enabling the implementation of quantum key distribution paradigms in contexts where cryogenic cooling is impracticable

The molecular characterisation of Escherichia coli K1 isolated from neonatal nasogastric feeding tubes

Background: The most common cause of Gram-negative bacterial neonatal meningitis is E. coli K1. It has a mortality rate of 10–15%, and neurological sequelae in 30– 50% of cases. Infections can be attributable to nosocomial sources, however the pre-colonisation of enteral feeding tubes has not been considered as a specific risk factor. Methods: Thirty E. coli strains, which had been isolated in an earlier study, from the residual lumen liquid and biofilms of neonatal nasogastric feeding tubes were genotyped using pulsed-field gel electrophoresis, and 7-loci multilocus sequence typing. Potential pathogenicity and biofilm associated traits were determined using specific PCR probes, genome analysis, and in vitro tissue culture assays. Results: The E. coli strains clustered into five pulsotypes, which were genotyped as sequence types (ST) 95, 73, 127, 394 and 2076 (Achman scheme). The extra-intestinal pathogenic E. coli (ExPEC) phylogenetic group B2 ST95 serotype O1:K1:NM strains had been isolated over a 2 week period from 11 neonates who were on different feeding regimes. The E. coli K1 ST95 strains encoded for various virulence traits associated with neonatal meningitis and extracellular matrix formation. These strains attached and invaded intestinal, and both human and rat brain cell lines, and persisted for 48 h in U937 macrophages. E. coli STs 73, 394 and 2076 also persisted in macrophages and invaded Caco-2 and human brain cells, but only ST394 invaded rat brain cells. E. coli ST127 was notable as it did not invade any cell lines. Conclusions: Routes by which E. coli K1 can be disseminated within a neonatal intensive care unit are uncertain, however the colonisation of neonatal enteral feeding tubes may be one reservoir source which could constitute a serious health risk to neonates following ingestion

Clinical and Imaging Characteristics of Arteriopathy Subtypes in Children with Arterial Ischemic Stroke: Results of the VIPS Study.

Background and purposeChildhood arteriopathies are rare but heterogenous, and difficult to diagnose and classify, especially by nonexperts. We quantified clinical and imaging characteristics associated with childhood arteriopathy subtypes to facilitate their diagnosis and classification in research and clinical settings.Materials and methodsThe Vascular Effects of Infection in Pediatric Stroke (VIPS) study prospectively enrolled 355 children with arterial ischemic stroke (2010-2014). A central team of experts reviewed all data to diagnose childhood arteriopathy and classify subtypes, including arterial dissection and focal cerebral arteriopathy-inflammatory type, which includes transient cerebral arteriopathy, Moyamoya disease, and diffuse/multifocal vasculitis. Only children whose stroke etiology could be conclusively diagnosed were included in these analyses. We constructed logistic regression models to identify characteristics associated with each arteriopathy subtype.ResultsAmong 127 children with definite arteriopathy, the arteriopathy subtype could not be classified in 18 (14%). Moyamoya disease (n = 34) occurred mostly in children younger than 8 years of age; focal cerebral arteriopathy-inflammatory type (n = 25), in children 8-15 years of age; and dissection (n = 26), at all ages. Vertigo at stroke presentation was common in dissection. Dissection affected the cervical arteries, while Moyamoya disease involved the supraclinoid internal carotid arteries. A banded appearance of the M1 segment of the middle cerebral artery was pathognomonic of focal cerebral arteriopathy-inflammatory type but was present in <25% of patients with focal cerebral arteriopathy-inflammatory type; a small lenticulostriate distribution infarct was a more common predictor of focal cerebral arteriopathy-inflammatory type, present in 76%. It remained difficult to distinguish focal cerebral arteriopathy-inflammatory type from intracranial dissection of the anterior circulation. We observed only secondary forms of diffuse/multifocal vasculitis, mostly due to meningitis.ConclusionsChildhood arteriopathy subtypes have some typical features that aid diagnosis. Better imaging methods, including vessel wall imaging, are needed for improved classification of focal cerebral arteriopathy of childhood

High-temperature performance of non-polar (11–20) InGaN quantum dots grown by a quasi-two-temperature method

Non-polar (11–20) a-plane InGaN quantum dots (QDs) are one of the strongest candidates to achieve on-chip applications of polarised single photon sources, which require a minimum operation temperature of ∼200 K under thermoelectrically cooled conditions. In order to further improve the material quality and optical properties of a-plane InGaN QDs, a quasi-two-temperature (Q2T) method has been developed, producing much smoother underlying InGaN quantum well than the previous modified droplet epitaxy (MDE) method. In this work, we compare the emission features of QDs grown by these two methods at temperatures up to 200 K. Both fabrications methods are shown to be able to produce QDs emitting around the thermoelectric cooling barrier. The sample fabricated by the new Q2T method demonstrates more stable operation, with an order of magnitude higher intensity at 200 K comparing to the comparable QDs grown by MDE. A detailed discussion of the possible mechanisms that result in this advantage of slower thermal quenching is presented. The use of this alternative fabrication method hence promises more reliable operation at temperatures even higher than the thermoelectric cooling threshold, and facilitates the on-going development of high temperature polarised single photon sources based on a-plane InGaN QDs.This research was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) Grants EP/M012379/1 and EP/M011682/1. T.W. is grateful for the award of the National Science Scholarship (NSS) as PhD funding by the Singapore Agency for Science, Technology and Research (A STAR). R.A.O. is grateful to the Royal Academy of Engineering and the Leverhulme Trust for a Senior Research Fellowship