Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN.

International audienceRoom temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 20%, and was determined independently in the different growth laboratories, by various methods. It is found that within the experimental uncertainty, there is no detectable bowing parameter in these alloys. This contradicts some previous experimental investigations and confirms other ones

Subsurface cleavage of diamond after high-speed three-dimensional dynamic friction polishing

To unfold the promise of diamond as an advanced technical material, single-crystal diamonds (SCDs) and polycrystalline diamonds (PCDs) were smoothed by high-precision three-dimensional movement dynamic friction polishing (3DM-DFP) to achieve the ultra-smooth surface with roughness <5 nm (even 1 nm) more effectively. However, this inevitably leads to subsurface damage growth, i.e., subsurface defects evolved from nearly damage free to partial defects, and to cleavage faults beneath the SCD surface, resulting from mechanical fatigue and/or the rate of energy input by increasing the linear polishing velocity (from 12 m s−1 to 60 m s−1). In this study it was elucidated, for the first time, the subsurface uniform tile-roof-like cleavage faults and its formation mechanism of diamond after 3DM-DFP at the superhigh speed of linear sliding velocity of 60 m s−1. And the generated subsurface damage would be extended to about 10 μm in depth of the (100) SCD and manifested as micro-cleavage fault region, transition area and compressive zone. Meanwhile, two Raman peaks of 1425 cm−1 (first-order) and 2200 cm−1 (second-order) are assigned to the subsurface damage, which is the amorphous carbon (quasi sp3 + sp2) resulting from the cleavage along (111) crystal planes, based on the fine analysis of Raman spectroscopy and the study of subsurface defect evolution in different types of diamonds. Moreover, the assignment of concomitant peaks of 1750 cm−1 (localized defects) and 2100 cm−1 (sp1 chains) were revealed