Unintentional F doping of the surface of SrTiO3(001) etched in HF acid -- structure and electronic properties

We show that the HF acid etch commonly used to prepare SrTiO3(001) for heteroepitaxial growth of complex oxides results in a non-negligible level of F doping within the terminal surface layer of TiO2. Using a combination of x-ray photoelectron spectroscopy and scanned angle x-ray photoelectron diffraction, we determine that on average ~13 % of the O anions in the surface layer are replaced by F, but that F does not occupy O sites in deeper layers. Despite this perturbation to the surface, the Fermi level remains unpinned, and the surface-state density, which determines the amount of band bending, is driven by factors other than F doping. The presence of F at the STO surface is expected to result in lower electron mobilities at complex oxide heterojunctions involving STO substrates because of impurity scattering. Unintentional F doping can be substantially reduced by replacing the HF-etch step with a boil in deionized water, which in conjunction with an oxygen tube furnace anneal, leaves the surface flat and TiO2 terminated.Comment: 18 pages, 7 figure

Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states) on photoluminescence excitation (PLE) spectra of InAs quantum dots (QDs) was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T) were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA) phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate

Bethe Ansatz for the Weakly Asymmetric Simple Exclusion Process and phase transition in the current distribution

The probability distribution of the current in the asymmetric simple exclusion process is expected to undergo a phase transition in the regime of weak asymmetry of the jumping rates. This transition was first predicted by Bodineau and Derrida using a linear stability analysis of the hydrodynamical limit of the process and further arguments have been given by Mallick and Prolhac. However it has been impossible so far to study what happens after the transition. The present paper presents an analysis of the large deviation function of the current on both sides of the transition from a Bethe ansatz approach of the weak asymmetry regime of the exclusion process.Comment: accepted to J.Stat.Phys, 1 figure, 1 reference, 2 paragraphs adde

Generalized measurements by linear elements

I give a first characterization of the class of generalized measurements that can be exactly realized on a pair of qudits encoded in indistinguishable particles, by using only linear elements and particle detectors. Two immediate results follow from this characterization. (i) The Schmidt number of each POVM element cannot exceed the number of initial particles. This rules out any possibility of performing perfect Bell-measurements for qudits. (ii) The maximum probability of performing a generalized incomplete Bell-measurement is 1/2.Comment: 4 pages. Submitted to Phys. Rev.

W Boson Inclusive Decays to Quarkonium at the LHC

In this paper, the production rates of quarkonia eta_c, J/psi, eta_b, Upsilon, B_c and B_c^* through W boson decay at the LHC are calculated, at the leading order in both the QCD coupling constant and in v, the typical velocity of the heavy quark inside of mesons. It shows that a sizable number of quarkonia from W boson decay will be produced at the LHC. Comparison with the predictions by using quark fragmentation mechanism is also discussed. Results show that, for the charmonium production through W decay, the difference between predictions by the fragmentation mechanism and complete leading order calculation is around 3%, and it is insensitive to the uncertainties of theoretical parameters; however, for the bottomonium and B_c^(*) productions, the difference cannot be ignored as the fragmentation mechanism is less applicable here due to the relatively large ratio mb/mw.Comment: Updated to match the published version in EPJ

Green Stimulated Emission Boosted by Nonradiative Resonant Energy Transfer from Blue Quantum Dots

Thanks to their tunability and versatility, the colloidal quantum dots (CQDs) made of II-VI semiconductor compound offer the potential to bridge the "green gap" in conventional semiconductors. However, when the CQDs are pumped to much higher initial excitonic states compared to their bandgap, multiexciton interaction is enhanced, leading to a much higher stimulated emission threshold. Here, to circumvent this drawback, for the first time, we show a fully colloidal gain in green enabled by a partially indirect pumping approach assisted by Förster resonance energy transfer process. By introducing the blue CQDs as exciton donors, the lasing threshold of the green CQDs, is reduced dramatically. The blue CQDs thus serve as an energy-transferring buffer medium to reduce excitation energy from pumping photons in a controlled way by injecting photoinduced excitons into green CQDs. Our newly developed colloidal pumping scheme could enable efficient CQD lasers of full visible colors by a single pump source and cascaded exciton transfer. This would potentially pave the way for an efficient multicolor laser for lighting and display applications. © 2016 American Chemical Society

Structure and properties of composite Ni–Co–Mn coatings on metal interconnects by electrodeposition

In order to obtain the high conductivity values and wide spinel stability region for solid oxide fuel cell interconnect, several multilayer Ni, Co and Mn coatings are electroplated and then oxidized in air to form spinel oxide layers. Potentiodynamic polarization curves in different simple solutions are tested to analyze the deposition behavior of Co and Mn. Microstructures and compositions of Ni–Co–Mn multi-layers by adjusting the thickness and deposition parameters are analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that area specific resistance value of sample B–Ni/Co after oxidation at 750 °C for 500h is the lowest among the coatings, and the resistance values at 700 °C and 800 °C are 35.3 and 31.7 mΩ‧cm2, respectively. When the Ni transition layer in the vicinity of coating/substrate interface is thick, it will lead to the outward diffusion and aggregation of element Fe to form Fe-rich oxide intermediate layer, which will affect the high-temperature performance of the coating. Pure Co and CoMn alloy coatings with a certain thickness can effectively prevent the inward diffusion of oxygen and the outward diffusion of Fe and Cr at high temperature. The thin Ni transition layer combined with the thick Co layer or CoMn layer has the best element diffusion inhibition and high temperature electrical properties during the long-term high-temperature oxidation process

Proximity effect at superconducting Sn-Bi2Se3 interface

We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250 mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap different from that of Sn, and a zero-bias conductance peak growing up at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.Comment: 7 pages, 8 figure