59 research outputs found
Effect of the Spatial Dispersion on the Shape of a Light Pulse in a Quantum Well
Reflectance, transmittance and absorbance of a symmetric light pulse, the
carrying frequency of which is close to the frequency of interband transitions
in a quantum well, are calculated. Energy levels of the quantum well are
assumed discrete, and two closely located excited levels are taken into
account. A wide quantum well (the width of which is comparable to the length of
the light wave, corresponding to the pulse carrying frequency) is considered,
and the dependance of the interband matrix element of the momentum operator on
the light wave vector is taken into account. Refractive indices of barriers and
quantum well are assumed equal each other. The problem is solved for an
arbitrary ratio of radiative and nonradiative lifetimes of electronic
excitations. It is shown that the spatial dispersion essentially affects the
shapes of reflected and transmitted pulses. The largest changes occur when the
radiative broadening is close to the difference of frequencies of interband
transitions taken into account.Comment: 7 pages, 5 figure
Principals of the theory of light reflection and absorption by low-dimensional semiconductor objects in quantizing magnetic fields at monochromatic and pulse excitations
The bases of the theory of light reflection and absorption by low-dimensional
semiconductor objects (quantum wells, wires and dots) at both monochromatic and
pulse irradiations and at any form of light pulses are developed. The
semiconductor object may be placed in a stationary quantizing magnetic field.
As an example the case of normal light incidence on a quantum well surface is
considered. The width of the quantum well may be comparable to the light wave
length and number of energy levels of electronic excitations is arbitrary. For
Fourier-components of electric fields the integral equation (similar to the
Dyson-equation) and solutions of this equation for some individual cases are
obtained.Comment: 14 page
Influence of Anomalous Dispersion on Optical Characteristics of Quantum Wells
Frequency dependencies of optical characteristics (reflection, transmission
and absorption of light) of a quantum well are investigated in a vicinity of
interband resonant transitions in a case of two closely located excited energy
levels. A wide quantum well in a quantizing magnetic field directed normally to
the quantum-well plane, and monochromatic stimulating light are considered.
Distinctions between refraction coefficients of barriers and quantum well, and
a spatial dispersion of the light wave are taken into account. It is shown that
at large radiative lifetimes of excited states in comparison with nonradiative
lifetimes, the frequency dependence of the light reflection coefficient in the
vicinity of resonant interband transitions is defined basically by a curve,
similar to the curve of the anomalous dispersion of the refraction coefficient.
The contribution of this curve weakens at alignment of radiative and
nonradiative times, it is practically imperceptible at opposite ratio of
lifetimes . It is shown also that the frequency dependencies similar to the
anomalous dispersion do not arise in transmission and absorption coefficients.Comment: 10 pages, 6 figure
Effects of inhomogeneous broadening on reflection spectra of Bragg multiple quantum well structures with a defect
The reflection spectrum of a multiple quantum well structure with an inserted
defect well is considered. The defect is characterized by the exciton frequency
different from that of the host's wells. It is shown that for relatively short
structures, the defect produces significant modifications of the reflection
spectrum, which can be useful for optoelectronic applications. Inhomogeneous
broadening is shown to affect the spectrum in a non-trivial way, which cannot
be described by the standard linear dispersion theory. A method of measuring
parameters of both homogeneous and inhomogeneous broadenings of the defect well
from a single CW reflection spectrum is suggested.Comment: 27 pages, 6 eps figures; RevTe
Octave-wide photonic band gap in three-dimensional plasmonic Bragg structures and limitations of radiative coupling
Radiative coupling between oscillators is one of the most fundamental subjects of research in optics, where particularly a Bragg-type arrangement is of interest and has already been applied to atoms and excitons in quantum wells. Here we explore this arrangement in a plasmonic structure. We observe the emergence of an octave-wide photonic band gap in the optical regime. Compared with atomic or excitonic systems, the coupling efficiency of the particle plasmons utilized here is several orders of magnitude larger and widely tunable by changing the size and geometry of the plasmonic nanowires. We are thus able to explore the regime where the coupling distance is even limited by the large radiative decay rate of the oscillators. This Bragg-stacked coupling scheme will open a new route for future plasmonic applications such as far-field coupling to quantum emitters without quenching, plasmonic cavity structures and plasmonic distributed gain schemes for spasers
Carbon nanotubes as excitonic insulators
Fifty years ago Walter Kohn speculated that a zero-gap semiconductor might be unstable against the spontaneous generation of excitons-electron-hole pairs bound together by Coulomb attraction. The reconstructed ground state would then open a gap breaking the symmetry of the underlying lattice, a genuine consequence of electronic correlations. Here we show that this excitonic insulator is realized in zero-gap carbon nanotubes by performing first-principles calculations through many-body perturbation theory as well as quantum Monte Carlo. The excitonic order modulates the charge between the two carbon sublattices opening an experimentally observable gap, which scales as the inverse of the tube radius and weakly depends on the axial magnetic field. Our findings call into question the Luttinger liquid paradigm for nanotubes and provide tests to experimentally discriminate between excitonic and Mott insulators
Influence of the effective layer thickness on the ground-state and excitonic properties of transition-metal dichalcogenide systems
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