352 research outputs found

    Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region

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    Optical reflection spectra of crystalline, sputtered, and ion implanted silicon specimens are presented. Characteristic aspects of the spectra of ion implanted specimens are related to lattice damage

    Distributions of individual Dirac eigenvalues for QCD at non-zero chemical potential: RMT predictions and lattice results

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    For QCD at non-zero chemical potential μ\mu, the Dirac eigenvalues are scattered in the complex plane. We define a notion of ordering for individual eigenvalues in this case and derive the distributions of individual eigenvalues from random matrix theory (RMT). We distinguish two cases depending on the parameter α=μ2F2V\alpha=\mu^2 F^2 V, where VV is the volume and FF is the familiar low-energy constant of chiral perturbation theory. For small α\alpha, we use a Fredholm determinant expansion and observe that already the first few terms give an excellent approximation. For large α\alpha, all spectral correlations are rotationally invariant, and exact results can be derived. We compare the RMT predictions to lattice data and in both cases find excellent agreement in the topological sectors ν=0,1,2\nu=0,1,2

    Individual complex Dirac eigenvalue distributions from random matrix theory and comparison to quenched lattice QCD with a quark chemical potential

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    We analyze how individual eigenvalues of the QCD Dirac operator at nonzero quark chemical potential are distributed in the complex plane. Exact and approximate analytical results for both quenched and unquenched distributions are derived from non-Hermitian random matrix theory. When comparing these to quenched lattice QCD spectra close to the origin, excellent agreement is found for zero and nonzero topology at several values of the quark chemical potential. Our analytical results are also applicable to other physical systems in the same symmetry class.Comment: 4 pages, 4 figures, minor changes, as published in Phys. Rev. Let

    Optical Reflection Studies of Damage in Ion Implanted Silicon

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    Optical (3–6.5 eV) reflection spectra are presented for crystalline Si implanted at room temperature with 40 keV Sb ions to doses of less than 2×10^15/cm^2. These spectra, and their deviation from the reflection spectrum of crystalline Si, are discussed in terms of a model based on the average dielectric properties of the implanted region. For samples having a high ion dose (>10^15/cm^2) the observed spectra resemble the spectra of sputtered Si films. Anneal characteristics of the reflection spectra are found to be dose dependent. These observations are compared to, and found to substantiate, the results of other experimental techniques for studying lattice damage in Si

    Inflectional loci of scrolls

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    Let X⊂PNX\subset \mathbb P^N be a scroll over a smooth curve CC and let \L=\mathcal O_{\mathbb P^N}(1)|_X denote the hyperplane bundle. The special geometry of XX implies that some sheaves related to the principal part bundles of \L are locally free. The inflectional loci of XX can be expressed in terms of these sheaves, leading to explicit formulas for the cohomology classes of the loci. The formulas imply that the only uninflected scrolls are the balanced rational normal scrolls.Comment: 9 pages, improved version. Accepted in Mathematische Zeitschrif

    Two dimensional fermions in three dimensional YM

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    Dirac fermions in the fundamental representation of SU(N) live on the surface of a cylinder embedded in R3R^3 and interact with a three dimensional SU(N) Yang Mills vector potential preserving a global chiral symmetry at finite NN. As the circumference of the cylinder is varied from small to large, the chiral symmetry gets spontaneously broken in the infinite NN limit at a typical bulk scale. Replacing three dimensional YM by four dimensional YM introduces non-trivial renormalization effects.Comment: 21 pages, 7 figures, 5 table
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