31 research outputs found

    Void-mediated formation of Sn quantum dots in a Si matrix

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    Atomic scale analysis of Sn quantum dots (QDs) formed during the molecular beam-epitaxy (MBE) growth of Sn_xSi_(1−x) (0.05 ⩽ x ⩽ 0.1) multilayers in a Si matrix revealed a void-mediated formation mechanism. Voids below the Si surface are induced by the lattice mismatch strain between Sn_xSi_(1−x) layers and Si, taking on their equilibrium tetrakaidecahedron shape. The diffusion of Sn atoms into these voids leads to an initial rapid coarsening of quantum dots during annealing. Since this formation process is not restricted to Sn, a method to grow QDs may be developed by controlling the formation of voids and the diffusion of materials into these voids during MBE growth

    Heusler-based synthetic antiferrimagnets

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    Antiferromagnet spintronic devices eliminate or mitigate long-range dipolar fields, thereby promising ultrafast operation. For spin transport electronics, one of the most successful strategies is the creation of metallic synthetic antiferromagnets, which, to date, have largely been formed from transition metals and their alloys. Here, we show that synthetic antiferrimagnetic sandwiches can be formed using exchange coupling spacer layers composed of atomically ordered RuAl layers and ultrathin, perpendicularly magnetized, tetragonal ferrimagnetic Heusler layers. Chemically ordered RuAl layers can both be grown on top of a Heusler layer and allow for the growth of ordered Heusler layers deposited on top of it that are as thin as one unit cell. The RuAl spacer layer gives rise to a thickness-dependent oscillatory interlayer coupling with an oscillation period of ~1.1 nm. The observation of ultrathin ordered synthetic antiferrimagnets substantially expands the family of synthetic antiferromagnets and magnetic compounds for spintronic technologies

    Observation of narrow baryon resonance decaying into pKs0pK^0_s in pA-interactions at 70GeV/c70 GeV/c with SVD-2 setup

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    SVD-2 experiment data have been analyzed to search for an exotic baryon state, the Θ+\Theta^+-baryon, in a pKs0pK^0_s decay mode at 70GeV/c70 GeV/c on IHEP accelerator. The reaction pA→pKs0+XpA \to pK^0_s+X with a limited multiplicity was used in the analysis. The pKs0pK^0_s invariant mass spectrum shows a resonant structure with M=1526±3(stat.)±3(syst.)MeV/c2M=1526\pm3(stat.)\pm 3(syst.) MeV/c^2 and Γ<24MeV/c2\Gamma < 24 MeV/c^2. The statistical significance of this peak was estimated to be of 5.6σ5.6 \sigma. The mass and width of the resonance is compatible with the recently reported Θ+\Theta^+- baryon with positive strangeness which was predicted as an exotic pentaquark (uuddsˉuudd\bar{s}) baryon state. The total cross section for Θ+\Theta^+ production in pN-interactions for XF≥0X_F\ge 0 was estimated to be (30÷120)μb(30\div120) \mu b and no essential deviation from A-dependence for inelastic events (∼A0.7)(\sim A^{0.7}) was found.Comment: 8 pages, 7 figures, To be submitted to Yadernaya Fizika. v3-v5 - Some references added, minor typos correcte
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