Toward Annealing Stable Molybdenum Oxide Based Hole Selective Contacts For Silicon Photovoltaics

Molybdenum oxide MoOX combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 C, which is needed to cure the screen printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen lean passivation layers when using such metal oxide based carrier selective contacts. Pre MoOX deposition annealing of the passivating a Si H layer is shown to be a straightforward approach to manufacturing MoOX based devices with high fill factors using screen printed metallization cured at 190

Impact of rough substrates on hydrogen doped indium oxides for the application in CIGS devices

Indium oxide based transparent conductive oxides TCOs are promising contact layers in solar cells due totheir outstanding electrical and optical properties. However, when applied in Cu In,Ga Se2or Si hetero junctionsolar cells the specific roughness of the material beneath can affect the growth and the properties of the TCO.We investigated the electrical properties of hydrogen doped and hydrogen tungsten co doped indium oxidesgrown on rough Cu In,Ga Se2samples as well as on textured and planar glass. At sharp ridges and V shapedvalleys crack shaped voids form inside the indium oxide films, which limit the effective electron mobilityof the In2O3 H and In2O3 H,W thin films. This was found for films deposited by magnetron sputtering andreactive plasma deposition at several deposition parameters, before as well as after annealing and solid phasecrystallization. This suggests universal behavior that will have a wide impact on solar cell device

The F-box protein FBXO45 promotes the proteasome-dependent degradation of p73

The transcription factor p73, a member of the p53 family, mediates cell-cycle arrest and apoptosis in response to DNA damage-induced cellular stress, acting thus as a proapoptotic gene. Similar to p53, p73 activity is regulated by post-translational modification, including phosphorylation, acetylation and ubiquitylation. In C. elegans, the F-box protein FSN-1 controls germline apoptosis by regulating CEP-1, the single ancestral p53 family member. Here we report that FBXO45, the human ortholog of FSN-1, binds specifically to p73 triggering its proteasome-dependent degradation. Importantly, SCF(FBXO45) ubiquitylates p73 both in vivo and in vitro. Moreover, siRNA-mediated depletion of FBXO45 stabilizes p73 and concomitantly induces cell death in a p53-independent manner. All together, these results show that the orphan F-box protein FBXO45 regulates the stability of p73, highlighting a conserved pathway evolved from nematode to human by which the p53 members are regulated by an SCF-dependent mechanism