Relating Statistical Image Differences and Degradation Features

Document images are degraded through bilevel processes such as scanning, printing, and photocopying. The resulting image degradations can be categorized based either on observable degradation features or on degradation model parameters. The degradation features can be related mathematically to model parameters. In this paper we statistically compare pairs of populations of degraded character images created with different model parameters. The changes in the probability that the characters are from different populations when the model parameters vary correlate with the relationship between observable degradation features and the model parameters. The paper also shows which features have the largest impact on the image

Hierarchically coupled ultradian oscillators generating robust circadian rhythms

Ensembles of mutually coupled ultradian cellular oscillators have been proposed by a number of authors to explain the generation of circadian rhythms in mammals. Most mathematical models using many coupled oscillators predict that the output period should vary as the square root of the number of participating units, thus being inconsistent with the well-established experimental result that ablation of substantial parts of the suprachiasmatic nuclei (SCN), the main circadian pacemaker in mammals, does not eliminate the overt circadian functions, which show no changes in the phases or periods of the rhythms. From these observations, we have developed a theoretical model that exhibits the robustness of the circadian clock to changes in the number of cells in the SCN, and that is readily adaptable to include the successful features of other known models of circadian regulation, such as the phase response curves and light resetting of the phase

On the equivalence between hierarchical segmentations and ultrametric watersheds

We study hierarchical segmentation in the framework of edge-weighted graphs. We define ultrametric watersheds as topological watersheds null on the minima. We prove that there exists a bijection between the set of ultrametric watersheds and the set of hierarchical segmentations. We end this paper by showing how to use the proposed framework in practice in the example of constrained connectivity; in particular it allows to compute such a hierarchy following a classical watershed-based morphological scheme, which provides an efficient algorithm to compute the whole hierarchy.Comment: 19 pages, double-colum

Multi-membership gene regulation in pathway based microarray analysis

This article is available through the Brunel Open Access Publishing Fund. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.Background: Gene expression analysis has been intensively researched for more than a decade. Recently, there has been elevated interest in the integration of microarray data analysis with other types of biological knowledge in a holistic analytical approach. We propose a methodology that can be facilitated for pathway based microarray data analysis, based on the observation that a substantial proportion of genes present in biochemical pathway databases are members of a number of distinct pathways. Our methodology aims towards establishing the state of individual pathways, by identifying those truly affected by the experimental conditions based on the behaviour of such genes. For that purpose it considers all the pathways in which a gene participates and the general census of gene expression per pathway. Results: We utilise hill climbing, simulated annealing and a genetic algorithm to analyse the consistency of the produced results, through the application of fuzzy adjusted rand indexes and hamming distance. All algorithms produce highly consistent genes to pathways allocations, revealing the contribution of genes to pathway functionality, in agreement with current pathway state visualisation techniques, with the simulated annealing search proving slightly superior in terms of efficiency. Conclusions: We show that the expression values of genes, which are members of a number of biochemical pathways or modules, are the net effect of the contribution of each gene to these biochemical processes. We show that by manipulating the pathway and module contribution of such genes to follow underlying trends we can interpret microarray results centred on the behaviour of these genes.The work was sponsored by the studentship scheme of the School of Information Systems, Computing and Mathematics, Brunel Universit

Dissecting Driver Behaviors Under Cognitive, Emotional, Sensorimotor, and Mixed Stressors

In a simulation experiment we studied the effects of cognitive, emotional, sensorimotor, and mixed stressors on driver arousal and performance with respect to (wrt) baseline. In a sample of n = 59 drivers, balanced in terms of age and gender, we found that all stressors incurred significant increases in mean sympathetic arousal accompanied by significant increases in mean absolute steering. The latter, translated to significantly larger range of lane departures only in the case of sensorimotor and mixed stressors, indicating more dangerous driving wrt baseline. In the case of cognitive or emotional stressors, often a smaller range of lane departures was observed, indicating safer driving wrt baseline. This paradox suggests an effective coping mechanism at work, which compensates erroneous reactions precipitated by cognitive or emotional conflict. This mechanisms’ grip slips, however, when the feedback loop is intermittently severed by sensorimotor distractions. Interestingly, mixed stressors did not affect crash rates in startling events, suggesting that the coping mechanism’s compensation time scale is above the range of neurophysiological latency

Identification of cancer predisposition variants in apparently healthy individuals using a next-generation sequencing-based family genomics approach

Cancer, like many common disorders, has a complex etiology, often with a strong genetic component and with multiple environmental factors contributing to susceptibility. A considerable number of genomic variants have been previously reported to be causative of, or associated with, an increased risk for various types of cancer. Here, we adopted a next-generation sequencing approach in 11 members of two families of Greek descent to identify all genomic variants with the potential to predispose family members to cancer. Cross-comparison with data from the Human Gene Mutation Database identified a total of 571 variants, from which 47 % were disease-associated polymorphisms, 26 % disease-associated polymorphisms with additional supporting functional evidence, 19 % functional polymorphisms with in vitro/laboratory or in vivo supporting evidence but no known disease association, 4 % putative disease-causing mutations but with some residual doubt as to their pathological significance, and 3 % disease-causing mutations. Subsequent analysis, focused on the latter variant class most likely to be involved in cancer predisposition, revealed two variants of prime interest, namely MSH2 c.2732T>A (p.L911R) and BRCA1 c.2955delC, the first of which is novel. KMT2D c.13895delC and c.1940C>A variants are additionally reported as incidental findings. The next-generation sequencing-based family genomics approach described herein has the potential to be applied to other types of complex genetic disorder in order to identify variants of potential pathological significance

Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE

The InAlAs/InGaAs high electron mobility transistor offers excellent high frequency, low noise operation for amplifiers. While this material system has been grown primarily by conventional MBE, other growth techniques have been examined for improved throughput. The flexibility of chemical beam epitaxy offers semi-infinite sources, good source stability, efficient phosphorus utilization, and extended uptime (more than 560 growth runs over 1.5 years). However, CBE has only recently been shown to produce excellent quality InAlAs suitable for the growth of InAlAs/InGaAs HEMTs [1]. This is the first parametric investigation of the properties of InAlAs/InGaAs HEMTs grown by CBE. A series of lattice matched, pulse doped HEMTs have been grown in which the dopant dose, spacer layer, and channel thickness were systematically varied. Low field 300 K Hall mobilities as high as 8700 cm2/V[middle dot]s for a sheet carrier concentration of 3x1012 cm-2have been measured. This mobility is somewhat lower than uniformly doped HEMTs, which have shown mobilities over 10,000 cm 2/V[middle dot]s at room temperature. A figure of merit, the low field conductivity, has been correlated among the device structure, gateless saturation currents, and DC and microwave device performance. Its applicability as a rough predictor of device performance will be discussed. For a given spacer thickness, the mobility improves as the pulse dose is decreased up to a mobility somewhat below that for uniformly doped structures. As the dopant to channel thickness is increased, this saturated mobility also increases. Secondary ion mass spectroscopy has shown no increase in carbon or oxygen levels at the dopant pulse. This has led to speculation that interface scattering at the top InAlAs/InGaAs interface may be important; however, initial SIMS results do not conclusively show intermixing of the Group III elements at this interface. It is possible that a reduction in the substrate temperature during growth may improve any interface roughness. Results of this modification in growth conditions shall be reported. Self-aligned 0.15 [mu]m HEMTs fabricated from these layers have shown external DC transconductances over 1000mS/mm, unity current gain cutoff frequencies as high as 190 GHz and unity power gain frequencies above 300 GHz. These results and those of more conventional 0.1 [mu]m gate length HEMTs demonstrate the potential of InAlAs/InGaAs HEMTs grown by CBE.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/30970/1/0000643.pd