The plasmoelectric effect: optically induced electrochemical potentials in resonant metallic structures

We describe a strategy for conversion of optical power into DC electrical power using resonant absorption in plasmonic nanostructures. A thermodynamic analysis of the underlying mechanism motivates our description of the phenomenon, which we term the plasmoelectric effect. Power conversion results from the dependence of optically generated heat on shifts of the plasmon resonance frequency that occur with changes of electron density. We model an all-metal device constructed from 10 nm radius silver spheres and predict a characteristic conversion efficiency of 14.3% under 1 kW m-2 intensity, single-frequency radiation. We discuss strategies for enhanced efficiency, broadband power conversion, and further applications of this new class of optoelectronic device.Comment: 24 pages with supplemental include

Strain modification in coherent Ge and SixGe1–x epitaxial films by ion-assisted molecular beam epitaxy

We have observed large changes in Ge and SixGe1–x layer strain during concurrent molecular beam epitaxial growth and low-energy bombardment. Layers are uniformly strained, coherent with the substrate, and contain no dislocations, suggesting that misfit strain is accommodated by free volume changes associated with injection of ion bombardment induced point defects. The dependence of layer strain on ion energy, ion-atom flux ratio, and temperature is consistent with the presence of a uniform dispersion of point defects at high concentration. Implications for distinguishing ion-surface interactions from ion-bulk interactions are discussed

Reflection high-energy electron diffraction analysis of polycrystalline films with grain size and orientation distributions

We report a computationally efficient algorithm to calculate reflection high-energy electron diffraction (RHEED) intensities from well-textured, small-grained polycrystalline films in the kinematic limit. We also show how the intensity maps of the spots in a RHEED pattern from such a film can be quantitatively analyzed to determine the film's average grain size, as well as its in-plane orientation and texture distributions. We find that the in-plane orientation and texture distribution widths of these films can be determined to within 1 degree and that the average lateral grain size can be measured to within a fraction of a nanometer after suitable calibration of our technique

Meson multiplicity in nucleus-nucleus collisions above 4 GeV/amu

Dependence of meson multiplicity on energy for 1486 cosmic ray nucleus-emulsion nucleus interactions is examined. Comparison is made to predictions of the Multi-Chain Model

Evolution of structural and magnetic properties in Ta/Ni_81Fe_(19) multilayer thin films

The interdiffusion kinetics in short period (12.8 nm) Ta/Ni81Fe19 polycrystalline multilayer films has been investigated and related to the evolution of soft magnetic properties upon thermal annealing in the temperature range 300-600-degrees-C. Small angle x-ray diffraction and transmission electron microscopy were used to estimate the multilayer period. Interdiffusion in the multilayers was directly computed from the decay of the satellites near (000) in a small angle x-ray diffraction spectrum. A kinetic analysis of interdiffusion suggests that grain growth is concurrent with grain boundary diffusion of Ta in Ni81Fe19. The evolution of soft magnetic properties of Ni81Fe19, i.e., lowering of 4piM(s) and increase in coercivity H(c), also lend support to the above analysis

Reflection high-energy electron diffraction experimental analysis of polycrystalline MgO films with grain size and orientation distributions

Analysis of biaxial texture of MgO films grown by ion-beam-assisted deposition (IBAD) has been performed using a quantitative reflection high-energy electron diffraction (RHEED) based method. MgO biaxial texture is determined by analysis of diffraction spot shapes from single RHEED images, and by measuring the width of RHEED in-plane rocking curves for MgO films grown on amorphous Si3N4 by IBAD using 750 eV Ar+ ions, at 45° incidence angle, and MgO e-beam evaporation. RHEED-based biaxial texture measurement accuracy is verified by comparison with in-plane and out-of-plane orientation distribution measurements made using transmission electron microscopy and x-ray rocking curves. In situ RHEED measurements also enable the analysis of the evolution of the biaxial texture which narrows with increasing film thickness. RHEED-based measurements of IBAD MgO biaxial texture show that the minimum in-plane orientation distribution depends on the out-of-plane orientation distribution, and indicates that the minimum obtainable in-plane orientation on distribution is 2°

Mesoscale modeling of photoelectrochemical devices: light absorption and carrier collection in monolithic, tandem, Si|WO_3 microwires

We analyze mesoscale light absorption and carrier collection in a tandem junction photoelectrochemical device using electromagnetic simulations. The tandem device consists of silicon (E_(g,Si) = 1.1 eV) and tungsten oxide (E_(g,WO3) = 2.6 eV) as photocathode and photoanode materials, respectively. Specifically, we investigated Si microwires with lengths of 100 µm, and diameters of 2 µm, with a 7 µm pitch, covered vertically with 50 µm of WO_3 with a thickness of 1 µm. Many geometrical variants of this prototypical tandem device were explored. For conditions of illumination with the AM 1.5G spectra, the nominal design resulted in a short circuit current density, J_(SC), of 1 mA/cm^2, which is limited by the WO_3 absorption. Geometrical optimization of photoanode and photocathode shape and contact material selection, enabled a three-fold increase in short circuit current density relative to the initial design via enhanced WO_3 light absorption. These findings validate the usefulness of a mesoscale analysis for ascertaining optimum optoelectronic performance in photoelectrochemical devices

Field-effect induced tunability in planar hyperbolic metamaterials

We demonstrate that use of the field effect to tune the effective optical parameters of a layered hyperbolic metamaterial leads to topological transitions in its dispersion characteristics in the optical regime. Field effect gating electrically modulates the permittivity in transparent conductive oxides via changes in the carrier density. These permittivity changes lead to active extreme modulation of ~200% of the effective electromagnetic parameters along with active control of the anisotropic dispersion surface of hyperbolic metamaterials and enable the opening and closing of photonic band gaps

Three-dimensional single gyroid photonic crystals with a mid-infrared bandgap

A gyroid structure is a distinct morphology that is triply periodic and consists of minimal isosurfaces containing no straight lines. We have designed and synthesized amorphous silicon (a-Si) mid-infrared gyroid photonic crystals that exhibit a complete bandgap in infrared spectroscopy measurements. Photonic crystals were synthesized by deposition of a-Si/Al2O3 coatings onto a sacrificial polymer scaffold defined by two-photon lithography. We observed a 100% reflectance at 7.5 \mum for single gyroids with a unit cell size of 4.5 \mum, in agreement with the photonic bandgap position predicted from full-wave electromagnetic simulations, whereas the observed reflection peak shifted to 8 um for a 5.5 \mum unit cell size. This approach represents a simulation-fabrication-characterization platform to realize three-dimensional gyroid photonic crystals with well-defined dimensions in real space and tailored properties in momentum space

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si + implantation at a fluence of 6 × 1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 µs for the unoxidized film to 43 µs for the film that was oxidized for 29 min