42 research outputs found
Accurate strain measurements in highly strained Ge microbridges
Ge under high strain is predicted to become a direct bandgap semiconductor.
Very large deformations can be introduced using microbridge devices. However,
at the microscale, strain values are commonly deduced from Raman spectroscopy
using empirical linear models only established up to 1.2% for uniaxial stress.
In this work, we calibrate the Raman-strain relation at higher strain using
synchrotron based microdiffraction. The Ge microbridges show unprecedented high
tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift.
We demonstrate experimentally and theoretically that the Raman strain relation
is not linear and we provide a more accurate expression.Comment: 10 pages, 4 figure
Experimental Comparison Between Sub-0.1µm Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility
International audienc
Experimental low field transport investigation in sub-0.1μm Ultra-thin SOI Single and Double Gate MOSFETs
International audienc
Experimental evaluation of gate architecture influence on multi-gate Silicon On Insulator MOSFETs performance.
International audienc
TiN metal gate thickness influence on fully depleted SOI MOSFETs physical and electrical properties
International audienc
Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devices
International audienc