A novel mechanism for binding of galactose-terminated glycans by the C-type carbohydrate recognition domain in blood dendritic cell antigen 2

Blood dendritic cell antigen 2 (BDCA-2; also designated CLEC4C or CD303) is uniquely expressed on plasmacytoid dendritic cells. Stimulation of BDCA-2 with antibodies leads to an anti-inflammatory response in these cells, but the natural ligands for the receptor are not known. The C-type carbohydrate recognition domain in the extracellular portion of BDCA-2 contains a signature motif typical of C-type animal lectins that bind mannose, glucose, or GlcNAc, yet it has been reported that BDCA-2 binds selectively to galactose-terminated, biantennary N-linked glycans. A combination of glycan array analysis and binding competition studies with monosaccharides and natural and synthetic oligosaccharides have been used to define the binding epitope for BDCA-2 as the trisaccharide Galβ1–3/4GlcNAcβ1–2Man. X-ray crystallography and mutagenesis studies show that mannose is ligated to the conserved Ca2+ in the primary binding site that is characteristic of C-type carbohydrate recognition domains, and the GlcNAc and galactose residues make additional interactions in a wide, shallow groove adjacent to the primary binding site. As predicted from these studies, BDCA-2 binds to IgG, which bears galactose-terminated glycans that are not commonly found attached to other serum glycoproteins. Thus, BDCA-2 has the potential to serve as a previously unrecognized immunoglobulin Fc receptor

Optomechanically induced transparency

Coherent interaction of laser radiation with multilevel atoms and molecules can lead to quantum interference in the electronic excitation pathways. A prominent example observed in atomic three-level-systems is the phenomenon of electromagnetically induced transparency (EIT), in which a control laser induces a narrow spectral transparency window for a weak probe laser beam. The concomitant rapid variation of the refractive index in this spectral window can give rise to dramatic reduction of the group velocity of a propagating pulse of probe light. Dynamic control of EIT via the control laser enables even a complete stop, that is, storage, of probe light pulses in the atomic medium. Here, we demonstrate optomechanically induced transparency (OMIT)--formally equivalent to EIT--in a cavity optomechanical system operating in the resolved sideband regime. A control laser tuned to the lower motional sideband of the cavity resonance induces a dipole-like interaction of optical and mechanical degrees of freedom. Under these conditions, the destructive interference of excitation pathways for an intracavity probe field gives rise to a window of transparency when a two-photon resonance condition is met. As a salient feature of EIT, the power of the control laser determines the width and depth of the probe transparency window. OMIT could therefore provide a new approach for delaying, slowing and storing light pulses in long-lived mechanical excitations of optomechanical systems, whose optical and mechanical properties can be tailored in almost arbitrary ways in the micro- and nano-optomechanical platforms developed to date

Alternative Approaches for HOM Damped Cavities

In this paper, we present two different ideas that may be useful for design and simulation of superconducting radio frequency cavities. To obtain longitudinal and transverse voltages resp. shunt impedances in cavities without rotational symmetry, one or two integration paths are often used to get an approximate difference relation for the transverse voltage of higher order modes HOMs . The presented approach uses a multipole decomposition that is valid in vicinity of the central axis to compute voltage multipole decomposition directly for paths of arbitrary number and position. Elliptical cavities have been a standard in SRF linac technology for 30 years. We present another approach to base cell geometry based on Bezier splines that is much more flexible in terms of optimization, while reaching equal performance level

Design Of SRF Cavities With Cell Profiles Based On Bezier Splines

Elliptical cavities have been a standard in SRF linac technology for 30 years. In this work, we present a novel approach [1] using Bezier spline profile curves. By using different degrees of spline curves, the number of free parameters can be varied to suit a given problem endcell tuning, basecell figures of merit , thus leading to a high flexibility of the spline approach. As a realistic example, a cubic spline SRF multicell cavity geometry is calculated and the figures of merit are optimized for the operational mode. We also present an outline for HOM endcell optimization that can be realized using available 2D solver

Generalized Drude model: Unification of ballistic and diffusive electron transport

For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean free path and arbitrary shape of the conduction band edge profile. Universal formulas are obtained for the current-voltage characteristic in the nondegenerate case and for the zero-bias conductance in the degenerate case, which describe in a transparent manner the interplay of ballistic and diffusive transport. The semiclassical approach is adopted, but quantum corrections allowing for tunneling are included. Examples are considered, in particular the case of chains of grains in polycrystalline or microcrystalline semiconductors with grain size comparable to, or smaller than, the mean free path. Substantial deviations of the results of the unified model from those of the ballistic thermionic-emission model and of the drift-diffusion model are found. The formulation of the model is one-dimensional, but it is argued that its results should not differ substantially from those of a fully three-dimensional treatment.Comment: 14 pages, 5 figures, REVTEX file, to appear in J. Phys.: Condens. Matte

Barrier-controlled carrier transport in microcrystalline semiconducting materials: Description within a unified model

A recently developed model that unifies the ballistic and diffusive transport mechanisms is applied in a theoretical study of carrier transport across potential barriers at grain boundaries in microcrystalline semiconducting materials. In the unified model, the conductance depends on the detailed structure of the band edge profile and in a nonlinear way on the carrier mean free path. Equilibrium band edge profiles are calculated within the trapping model for samples made up of a linear chain of identical grains. Quantum corrections allowing for tunneling are included in the calculation of electron mobilities. The dependence of the mobilities on carrier mean free path, grain length, number of grains, and temperature is examined, and appreciable departures from the results of the thermionic-field-emission model are found. Specifically, the unified model is applied in an analysis of Hall mobility data for n-type microcrystalline Si thin films in the range of thermally activated transport. Owing mainly to the effect of tunneling, potential barrier heights derived from the data are substantially larger than the activation energies of the Hall mobilities. The specific features of the unified model, however, cannot be resolved within the rather large uncertainties of the analysis.Comment: REVTex, 19 pages, 9 figures; to appear in J. Appl. Phy