Spontaneous Interlayer Charge Transfer near the Magnetic Quantum Limit

Experiments reveal that a confined electron system with two equally-populated layers at zero magnetic field can spontaneously break this symmetry through an interlayer charge transfer near the magnetic quantum limit. New fractional quantum Hall states at unusual total filling factors such as \nu = 11/15 (= 1/3 + 2/5) stabilize as signatures that the system deforms itself, at substantial electrostatic energy cost, in order to gain crucial correlation energy by "locking in" separate incompressible liquid phases at unequal fillings in the two layers (e.g., layered 1/3 and 2/5 states in the case of \nu = 11/15).Comment: 4 pages, 4 figures (1 color) included in text. Related papers at http://www.ee.princeton.edu/~hari/papers.htm

The Quantized Hall Insulator: A New Insulator in Two-Dimensions

Quite generally, an insulator is theoretically defined by a vanishing conductivity tensor at the absolute zero of temperature. In classical insulators, such as band insulators, vanishing conductivities lead to diverging resistivities. In other insulators, in particular when a high magnetic field (B) is added, it is possible that while the magneto-resistance diverges, the Hall resistance remains finite, which is known as a Hall insulator. In this letter we demonstrate experimentally the existence of another, more exotic, insulator. This insulator, which terminates the quantum Hall effect series in a two-dimensional electron system, is characterized by a Hall resistance which is approximately quantized in the quantum unit of resistance h/e^2. This insulator is termed a quantized Hall insulator. In addition we show that for the same sample, the insulating state preceding the QHE series, at low-B, is of the HI kind.Comment: 4 page

Resistivity peak values at transition between fractional quantum Hall states

Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretical predictions. It is found that the majority of the peak values are close to the theoretical values for two-dimensional systems with moderate mobilities.Comment: 3 pages, 1 figur

Quantum Correlated Interstitials and the Hall Resistivity of the Magnetically Induced Wigner Crystal

We study a trial wavefunction for an interstitial in a Wigner crystal. We find that the electron correlations, ignored in a conventional Hartree-Fock treatment, dramatically lower the interstitial energy, especially at fillings close to an incompressible liquid state. The correlation between the interstitial electron and the lattice electrons at $\nu <1/m$ is introduced by constructing a trial wave- function which bears a Jastrow factor of a Laughlin state at $\nu=1/m$. For fillings close to but just below $\nu=1/m$, we find that a perfect Wigner crystal becomes unstable against formation of such interstitials. It is argued that conduction due to correlated interstitials in the presence of weak disorder leads to the {\it classical} Hall resistivity, as seen experimentally.Comment: 10 pages, RevTe

Wigner Crystalization in the Lowest Landau Level for ν≥1/5\nu \ge 1/5

By means of exact diagonalization we study the low-energy states of seven electrons in the lowest Landau level which are confined by a cylindric external potential modelling the rest of a macroscopic system and thus controlling the filling factor $\nu$. Wigner crystal is found to be the ground state for filling factors between $\nu = 1/3$ and $\nu = 1/5$ provided electrons interact via the bare Coulomb potential. Even at $\nu =1/5$ the solid state has lower energy than the Laughlin's one, although the two energies are rather close. We also discuss the role of pseudopotential parameters in the lowest Landau level and demonstrate that the earlier reported gapless state, appearing when the short-range part of the interaction is suppressed, has nothing in common with the Wigner crystalization in pure Coulomb case.Comment: 9 pages, LaTex, 8 figure

Electron-Electron Interactions and the Hall-Insulator

Using the Kubo formula, we show explicitly that a non-interacting electron system can not behave like a Hall-insulator, {\it ie.,} a DC resistivity matrix $\rho_{xx}\rightarrow\infty$ and $\rho_{xy}=$finite in the zero temperature limit, as has been observed recently in experiment. For a strongly interacting electron system in a magnetic field, we illustrate, by constructing a specific form of correlations between mobile and localized electrons, that the Hall resistivity can approximately equal to its classical value. A Hall-insulator is realized in this model when the density of mobile electrons becomes vanishingly small. It is shown that in non-interacting electron systems, the zero-temperature frequency-dependent conductacnce generally does not give the DC conductance.Comment: 11 pages, RevTeX3.

Laughlin-Jastrow-correlated Wigner crystal in a strong magnetic field

We propose a new ground state trial wavefunction for a two-dimensional Wigner crystal in a strong perpendicular magnetic field. The wavefunction includes Laughlin-Jastrow correlations between electron pairs, and may be interpreted as a crystal state of composite fermions or composite bosons. Treating the power $m$ of the Laughlin-Jastrow factor as a variational parameter, we use quantum Monte Carlo simulations to compute the energy of these new states. We find that our wavefunctions have lower energy than existing crystalline wavefunctions in the lowest Landau level. Our results are consistent with experimental observations of the filling factor at which the transition between the fractional quantum Hall liquid and the Wigner crystal occurs for electron systems. Exchange contributions to the wavefunctions are estimated quantitatively and shown to be negligible for sufficiently small filling factors

Sliding motion of a two-dimensional Wigner crystal in a strong magnetic field

We study the sliding state of a two-dimensional Wigner crystal in a strong magnetic field and a random impurity potential. Using a high-velocity perturbation theory, we compute the nonlinear conductivity, various correlation functions, and the interference effects arising in combined AC + DC electric effects, including the Shapiro anomaly and the linear response to an AC field. Disorder is found to induce mainly transverse distortions in the sliding state of the lattice. The Hall resistivity retains its classical value. We find that, within the large velocity perturbation theory, free carriers which affect the longitudinal phonon modes of the Wigner crystal do not change the form of the nonlinear conductivity. We compare the present sliding Wigner crystal in a strong magnetic field to the conventional sliding charge-density wave systems. Our result for the nonlinear conductivity agrees well with the $I-V$ characteristics measured in some experiments at low temperatures or large depinning fields, for the insulating phases near filling factor $\nu$ = 1/5. We summarize the available experimental data, and point out the differences among them.Comment: appeared in RPB vol. 50, 4600 (1994); LaTex file; 3 figures available from [email protected]

Quasiparticle Interactions in Fractional Quantum Hall Systems: Justification of Different Hierarchy Schemes

The pseudopotentials describing the interactions of quasiparticles in fractional quantum Hall (FQH) states are studied. Rules for the identification of incompressible quantum fluid ground states are found, based upon the form of the pseudopotentials. States belonging to the Jain sequence nu=n/(1+2pn), where n and p are integers, appear to be the only incompressible states in the thermodynamic limit, although other FQH hierarchy states occur for finite size systems. This explains the success of the composite Fermion picture.Comment: RevTeX, 10 pages, 7 EPS figures, submitted fo Phys.Rev.

Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ?? 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.open292