Simulated dynamics of optically pumped dilute nitride 1300 nm spin vertical-cavity surface-emitting lasers

The authors report a theoretical analysis of optically pumped 1300 nm dilute nitride spin-polarised vertical-cavity surface-emitting lasers (VCSELs) using the spin-flip model to determine the regions of stability and instability. The dependence of the output polarisation ellipticity on that of the pump is investigated, and the results are presented in twodimensional contour maps of the pump polarisation against the magnitude of the optical pump. Rich dynamics and various forms of oscillatory behaviour causing self-sustained oscillations in the polarisation of the spin-VCSEL subject to continuouswave pumping have been found because of the competition of the spin-flip processes and birefringence. The authors also reveal the importance of considering both the birefringence rate and the linewidth enhancement factor when engineering a device for high-frequency applications. A very good agreement is found with the experimental results reported by the authors' group. © The Institution of Engineering and Technology 2014

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain

External optical feedback effects on the performance of vertical cavity semiconductor optical amplifiers

Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for a wide range of applications in optical communication systems. The vertical- cavity design gives these devices a number of advantages over in-plane devices, such as high coupling efficiency to optical fiber, low power consumption, small form factor, and the possibility of fabricating 2-D arrays on wafer. Furthermore, the technology allows for on-wafer testing and is compatible with low-cost manufacturing and packaging techniques

1.3µm continuously-tunable fibre-coupled GaInNAs VCSEL

We report the single-mode operation of a fiber-coupled, tunable GaInNAs VCSEL operating at 1.3-µm. Early results show that the device can be continuously tuned, at room temperature, over 14.5-nm with output powers up to 0.12-mW

14.5-nm emission tuning from a fibre-coupled GaInNAs VCSEL

This paper is about 14.5-nm emission tuning from a fibre-coupled GaInNAs VCSEL. It was presented at the 17th Indium Phosphide and Related Materials Meeting in 2005