74 research outputs found

    Electron-phonon effects and transport in carbon nanotubes

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    We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of ~70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.Comment: 5 pages and 4 figure

    Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

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    The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].Comment: 16 pages, 3 figure
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