Physical mechanisms and scaling laws of K-shell double photoionization

We report on the photon energy dependence of the K-shell double photoionization (DPI) of Mg, Al, and Si. The DPI cross sections were derived from high-resolution measurements of x-ray spectra following the radiative decay of the K-shell double vacancy states. Our data evince the relative importance of the final-state electron-electron interaction to the DPI. By comparing the double-to-single K-shell photoionization cross-section ratios for neutral atoms with convergent close-coupling calculations for He-like ions, the effect of outer shell electrons on the K-shell DPI process is assessed. Universal scaling of the DPI cross sections with the effective nuclear charge for neutral atoms is revealed

Double K-shell photoionization of low-Z atoms and He-like ions

We report on the investigation of the photon energy dependence of double 1s photoionization of light atoms and compare the cross sections for hollow atom and He-like ion production. Measurements of the Kα hypersatellite x-ray spectra of Mg, Al, and Si were carried out using the Fribourg high-resolution x-ray spectrometer installed at the ID21 and ID26 beam lines at the ESRF. The double-to-single photoionization cross section ratios were derived as a function of the incident photon beam energy and compared to convergent close-coupling (CCC) calculations for He-like ions. The dynamical electron-electron scattering contribution to the DPI cross-sections was found to be more important for neutral atoms than for the He isoelectronic serie

High energy resolution off-resonant spectroscopy for X-ray absorption spectra free of self-absorption effects

X-ray emission spectra recorded in the off-resonant regime carry information on the density of unoccupied states. It is known that by employing the Kramers-Heisenberg formalism, the high energy resolution off-resonant spectroscopy (HEROS) is equivalent to the x-ray absorption spectroscopy (XAS) technique and provides the same electronic state information. Moreover, in the present Letter we demonstrate that the shape of HEROS spectra is not modified by self-absorption effects. Therefore, in contrast to the fluorescence-based XAS techniques, the recorded shape of the spectra is independent of the sample concentration or thickness. The HEROS may thus be used as an experimental technique when precise information about specific absorption features and their strengths is crucial for chemical speciation or theoretical evaluation

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹²  atoms/cm². The latter can be presumably further improved down to 10⁷  atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed