The development of a model to infer precipitation from microwave measurements

To permit the inference of precipitation amounts from radiometric measurements, a radiative interaction model was developed. This model uses a simple computational scheme to determine the effects of rain upon brightness temperatures and can be used with a statistical inversion procedure to invert for rain rate. Precipitating cloud models was also developed and used with the microwave model for frequencies of 19.35 and 37 GHz to determine the variability of the microwave-rain rate relationship on a global and seasonal basis

First-Principles Study on Leakage Current through Si/SiO2_2 Interface

The relationship between the presence of defects at the stacking structure of the Si/SiO$_2$ interface and leakage current is theoretically studied by first-principles calculation. I found that the leakage current through the interface with dangling bonds is 530 times larger than that without any defects, which is expected to lead to dielectric breakdown. The direction of the dangling bonds is closely related to the performance of the oxide as an insulator. In addition, it is proved that the termination of the dangling bonds by hydrogen atoms is effective for reducing the leakage current.Comment: 11 pages. to be published in Phys. Rev.

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a forward bias level for each modulation frequency. Active participation of sub-bandgap defect states in minority carrier recombination dynamics is sought to explain the results. Negative capacitance is understood as a necessary dielectric response to compensate any irreversible transient changes in the minority carrier reservoir due to radiative recombinations mediated by slowly responding sub-bandgap defects. Experimentally measured variations of the in-phase component of modulated electroluminescence spectra with forward bias levels and modulation frequencies support the dynamic influence of these states in the radiative recombination process. Predominant negative sign of the in-phase component of voltage modulated electroluminescence signal further confirms the bi-molecular nature of light emission. We also discuss how these states can actually affect the net density of minority carriers available for radiative recombination. Results indicate that these sub-bandgap states can suppress external quantum efficiency of such devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure

Myocardial fibrosis in stroke survivors

Stroke survivors are most likely to die of cardiac death, yet few undergo comprehensive cardiac assessment to look for reversible causes. Myocardial fibrosis (MF) is not only the hallmark of cardiomyopathy, but also a substrate for sudden cardiac death, ventricular tachyarrhythmia and heart failure. Procollagen carboxyl-terminal telopeptide (PICP) was found to be a marker of MF. The relationship between PICP and cardiac abnormalities in stroke survivors is unknown. We recently showed that MF in stroke survivors can be treated by spironolactone and amiloride in a randomised placebo-controlled cross-over study with reduction in PICP levels and QTc [1]

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.Comment: 5 pages, 4 figure

Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the FET electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4 cm^2/Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the "intrinsic" transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals.Comment: 26 pages, 7 figure

Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentration; the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as built-in voltage, charge density and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.Comment: 14 pages with 4 figures, manuscript under revision at Journal of Applied Physics for more than 1 year (submitted May 2004, first revision September 2004, second revision May 2005

Oxidation mechanism in metal nanoclusters: Zn nanoclusters to ZnO hollow nanoclusters

Zn nanoclusters (NCs) are deposited by Low-energy cluster beam deposition technique. The mechanism of oxidation is studied by analysing their compositional and morphological evolution over a long span of time (three years) due to exposure to ambient atmosphere. It is concluded that the mechanism proceeds in two steps. In the first step, the shell of ZnO forms over Zn NCs rapidly up to certain limiting thickness: with in few days -- depending upon the size -- Zn NCs are converted to Zn-ZnO (core-shell), Zn-void-ZnO, or hollow ZnO type NCs. Bigger than ~15 nm become Zn-ZnO (core-shell) type: among them, NCs above ~25 nm could able to retain their initial geometrical shapes (namely triangular, hexagonal, rectangular and rhombohedral), but ~25 to 15 nm size NCs become irregular or distorted geometrical shapes. NCs between ~15 to 5 nm become Zn-void-ZnO type, and smaller than ~5 nm become ZnO hollow sphere type i.e. ZnO hollow NCs. In the second step, all Zn-void-ZnO and Zn-ZnO (core-shell) structures are converted to hollow ZnO NCs in a slow and gradual process, and the mechanism of conversion proceeds through expansion in size by incorporating ZnO monomers inside the shell. The observed oxidation behaviour of NCs is compared with theory of Cabrera - Mott on low-temperature oxidation of metal.Comment: 9 pages, 8 figure

Space-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model

A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.Comment: 8 pages, 4 figures. accepted to Physical Review

Interplay of bulk and surface properties for steady-state measurements of minority carrier lifetimes

The measurement of the minority carrier lifetime is a powerful tool in the field of semiconductor material characterization as it is very sensitive to electrically active defects. Furthermore, it is applicable to a wide range of samples such as ingots or wafers. In this work, a systematic theoretical analysis of the steady-state approach is presented. It is shown how the measured lifetime relates to the intrinsic bulk lifetime for a given material quality, sample thickness, and surface passivation. This makes the bulk properties experimentally accessible by separating them from the surface effects. In particular, closed analytical solutions of the most important cases, such as passivated and unpassivated wafers and blocks are given. Based on these results, a criterion for a critical sample thickness is given beyond which a lifetime measurement allows deducing the bulk properties for a given surface recombination. These results are of particular interest for semiconductor material diagnostics especially for photovoltaic applications but not limited to this field.Comment: 17 pages, 3 figure