Adaptation to Digitalization in Supply Chain Management

Abstract- The purpose of the study was to find out the possibilities of adapting states to global trends in the digital transformation of the main spheres of life for survival and development in an emerging multi-polar world. The work was done as part of a grant from the Russian Foundation for Basic Research and discloses the results of the initial stage of its implementation. Our task was to develop a conceptual vision for solving the problems of adapting states to global trends in digital transformation and to justify the mechanisms for its implementation in practice. Information for the study was compiled from scientific literature, the Internet, statistical reports, and other open sources available for use. In the theoretical part of the study, we needed to clarify such concepts as “digitalization in supply chain management ” and “adaptation”, justify the manifestation of their basic functions, identify and describe such new global trends in digitalization in supply chain management  that affect adaptation, as the dominant role of states in this issue over other participants in digital transformations; their massive, comprehensive nature, high speed and irreversibility of digital transformation; recognition of intellectual capital as the undivided dominant power of digital transformation and the displacement of cultural and spiritual factors of human development into the background. Contrary to expectations, we came to the conclusion that the adaptation of states to the global trends of digital transformation in the main areas of life is facilitated by the timely identification, understanding of global changes and the implementation of strategies for adapting institutions, business entities, the population and society to future changes using special rules, mechanisms and decisions set out in the paper. The recommendations arising from this study can be applied at the state and interstate levels of government when developing strategies, programs, regulatory documents, regulations and standards governing adaptation to digitalization in supply chain management. They are useful for business corporations and public organizations which professional interests extend to solving the problems of socialization and adaptation of people, taking into account the diversity of cultures and national identity of citizens

Non-uniform liquid in external field

To calculate the density profile of a liquid in an external field, it is necessary to consider the density as a functional of the system\u27s chemical potential, i.e. the correlation effects must be investigated. On the basis of a statistical-mechanical calculation, the authors obtained an expansion of the liquid density into a series of moments of correlation functions of different orders. The expression for the liquid density profile was obtained as a sum of local and correlation terms. The correlation term has been calculated within the Ornstein-Zernike approximation in the vicinity of the critical point. It is shown that this term decreases the total variation of density by about 10%

Non-uniform liquid in external field

To calculate the density profile of a liquid in an external field, it is necessary to consider the density as a functional of the system\u27s chemical potential, i.e. the correlation effects must be investigated. On the basis of a statistical-mechanical calculation, the authors obtained an expansion of the liquid density into a series of moments of correlation functions of different orders. The expression for the liquid density profile was obtained as a sum of local and correlation terms. The correlation term has been calculated within the Ornstein-Zernike approximation in the vicinity of the critical point. It is shown that this term decreases the total variation of density by about 10%

Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data. View Full-Tex