GaAs homojunction solar cell development

The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells

Non-LTE Spectra of Accretion Disks Around Intermediate-Mass Black Holes

We have calculated the structures and the emergent spectra of stationary, geometrically thin accretion disks around 100 and 1000 M_sun black holes in both the Schwarzschild and extreme Kerr metrics. Equations of radiative transfer, hydrostatic equilibrium, energy balance, ionization equilibrium, and statistical equilibrium are solved simultaneously and consistently. The six most astrophysically abundant elements (H, He, C, N, O, and Fe) are included, as well as energy transfer by Comptonization. The observed spectrum as a function of viewing angle is computed incorporating all general relativistic effects. We find that, in contrast with the predictions of the commonly-used multi-color disk (MCD) model, opacity associated with photoionization of heavy elements can significantly alter the spectrum near its peak. These ionization edges can create spectral breaks visible in the spectra of slowly-spinning black holes viewed from almost all angles and in the spectra of rapidly-spinning black holes seen approximately pole-on. For fixed mass and accretion rate relative to Eddington, both the black hole spin and the viewing angle can significantly shift the observed peak energy of the spectrum, particularly for rapid spin viewed obliquely or edge-on. We present a detailed test of the approximations made in various forms of the MCD model. Linear limb-darkening is confirmed to be a reasonable approximation for the integrated flux, but not for many specific frequencies of interest.Comment: 30 pages, 11 eps figures, accepted for publication in Ap

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy

Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)

The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.Comment: to appear in Phys. Rev. Let

Measurements with the Chandra X-Ray Observatory's flight contamination monitor

NASA's Chandra X-ray Observatory includes a Flight Contamination Monitor (FCM), a system of 16 radioactive calibration sources mounted to the inside of the Observatory's forward contamination cover. The purpose of the FCM is to verify the ground-to-orbit transfer of the Chandra flux scale, through comparison of data acquired during the ground calibration with those obtained in orbit, immediately prior to opening the Observatory's sun-shade door. Here we report results of these measurements, which place limits on the change in mirror--detector system response and, hence, on any accumulation of molecular contamination on the mirrors' iridium-coated surfaces.Comment: 7pages,8figures,for SPIE 4012, paper 7

Gamma-ray transfer and energy deposition in supernovae

Solutions to the energy-independent (gray) radiative transfer equations are compared to results of Monte Carlo simulations of the \Ni\ and \Co\ radioactive decay \GR\ energy deposition in supernovae. The comparison shows that an effective, purely absorptive, gray opacity, \KG\ \sim (0.06 \pm 0.01)Y_e cm^2 g^{-1}, where Y_e is the total number of electrons per baryon, accurately describes the interaction of \GRs\ with the cool supernova gas and the local \GR\ energy deposition within the gas. The nature of the \GR\ interaction process (dominated by Compton scattering in the relativistic regime) creates a weak dependence of \KG\ on the optical thickness of the (spherically symmetric) supernova atmosphere: The maximum value of \KG\ applies during optically thick conditions when individual \GRs\ undergo multiple scattering encounters and the lower bound is reached at the phase characterized by a total Thomson optical depth to the center of the atmosphere \te\ \LA\ 1. Our results quantitatively confirm that the quick and efficient solution to the gray transfer problem provides an accurate representation of \GR\ energy deposition for a broad range of supernova conditions

ZnSe Heteroepitaxial Growth on Si (100) and GaAs (100)

The early stages of ZnSe heteroepitaxy on Si(100), Si(100):As and GaAs(100) are compared and contrasted, based on results of scanning tunneling microscopy and photoemission spectroscopy. High Se reactivity with the substrate constituents leads to bulk phase formation which is detrimental to heteroepitaxy. As-termination of Si(100) not only passivates the surface, but also provides an ideal buffer for ZnSe overgrowth. Lacking a similar buffer layer, stoichiometric control of the GaAs(100) surface is investigated to find a means for controlled heteroepitaxy

Epitaxial EuO Thin Films on GaAs

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57{\deg}, a significant remanent magnetization, and a Curie temperature of 69 K.Comment: 5 pages, 3 figure

Overcoming Impostor Syndrome

ALA Core\u27s AvramCamp is designed to be a safe and inclusive day-long workshop for people of marginalized genders, including women, non-binary folks, and trans men, to come together and discuss challenges these groups commonly face while working in the library technology field. Each AvramCamp begins with a workshop to talk about Impostor Syndrome: what it is, how to recognize it, and strategies to overcome those feelings of being a fake or a fraud. Participants are encouraged to engage with the facilitators, creating a lively and honest discussion around an often private and sensitive topic