10 research outputs found
Тонкі плівки оксиду диспрозію, утворені при швидкому термічному відпалі на пористих підкладках SiC
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy2O3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy2O3/por-SiC/SiC structureУ цій роботі розглянуто вплив швидкого термічного відпалу (ШТВ) на властивості плівки Dy2O3, що утворюється на поверхні підкладки зі структурою por-SiC/SiC. Атомний склад досліджуваних плівок аналізували як функцію часу ШТВ. Показано, що метод ШТВ дозволяє отримувати тонкі плівки оксиду диспрозію зі складом, близьким до стехіометричного. У цьому випадку збільшення часу ШТВ призводить до поліпшення якості межі поділу плівка-підкладка і до збільшення оптичного пропускання структури Dy2O3/por-SiC/SiC
Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
The comparative analysis of optical characteristics inherent to TiO2/SiC and TiO2/por-SiC/SiC structures has been performed. It has been shown that, in these structures regardless of the substrate structure, formation of TiO2 layers with approximately the same width 60 nm takes place. In this case the TiO2 film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO2/por-SiC/SiC structure leads to blurring the oxide film – substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in
their transmission spectra as well as smearing of grain structure at their surface
Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating
For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize the formation and annealing conditions for structures with film coating disturbances during annealing when manufacturing integrated microcircuits
Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 К and rapid thermal annealing in dry oxygen at 1273 К. From an analysis of the sample optical density and radius of curvature variations with total duration of microwave action, we concluded that the structures obtained using rapid thermal annealing are more stable against microwave action
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
The comparative analysis of optical characteristics inherent to Er2O3/SiC and Er2O3/por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er2O3 film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er2O3 film approaching to the stoichiometric one. At the same time, introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening the photoluminescence band measured in this structure
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy 2 O 3 /por-SiC/SiC structure
Increase in operational relaibility of flying shears on 1700 mill
Translated from Russian (Stal' 1986 (5) p. 57T)SIGLEAvailable from British Library Document Supply Centre- DSC:5828.4(M--36959)T / BLDSC - British Library Document Supply CentreGBUnited Kingdo