Low-frequency magnetic sensing by magnetoelectric metglas/bidomain LiNbO3 long bars

We present an investigation into the magnetic sensing performance of magnetoelectric bilayered metglas / bidomain LiNbO3 long thin bars operating in a cantilever or free vibrating regime and under quasi-static and low-frequency resonant conditions. Bidomain single crystals of Y+128o-cut LiNbO3 were engineered by an improved diffusion annealing technique with a polarization macrodomain structure of the “head-to-head” and “tail-to-tail” type. Long composite bars with lengths of 30, 40 and 45 mm, as well as with and without attached small tip proof masses, were studied. ME coefficients as large as 550 V/cm∙Oe, corresponding to a conversion ratio of 27.5 V/Oe, were obtained under resonance conditions at frequencies of the order of 100 Hz in magnetic bias fields as low as 2 Oe. Equivalent magnetic noise spectral densities down to 120 pT/Hz1/2 at 10 Hz and to 68 pT/Hz1/2 at a resonance frequency as low as 81 Hz were obtained for the 45 mm long cantilever bar with a tip proof mass of 1.2 g. In the same composite without any added mass the magnetic noise was shown to be as low as 37 pT/Hz1/2 at a resonance frequency of 244 Hz and 1.2 pT/Hz1/2 at 1335 Hz in a fixed cantilever and free vibrating regimes, respectively. A simple unidimensional dynamic model predicted the possibility to drop the low-frequency magnetic noise by more than one order of magnitude in case all the extrinsic noise sources are suppressed, especially those related to external vibrations, and the thickness ratio of the magnetic-to-piezoelectric phases is optimized. Thus, we have shown that such systems might find use in simple and sensitive room-temperature low-frequency magnetic sensors, e.g., for biomedical applications.publishe

Magnetoelectric metglas/bidomain y + 140°-cut lithium niobate composite for sensing fT magnetic fields

We investigated the magnetoelectric properties of a new laminate composite material based on y+140°-cut congruent lithium niobate piezoelectric plates with an antiparallel polarized “head-to-head” bidomain structure and metglas used as a magnetostrictive layer. A series of bidomain lithium niobate crystals were prepared by annealing under conditions of Li2O outdiffusion from LiNbO3 with a resultant growth of an inversion domain. The measured quasi-static magnetoelectric coupling coefficient achieved |αE31| = 1.9 V·(cm·Oe)–1. At a bending resonance frequency of 6862 Hz, we found a giant |αE31| value up to 1704 V·(cm·Oe)–1. Furthermore, the equivalent magnetic noise spectral density of the investigated composite material was only 92 fT/Hz1/2, a record value for such a low operation frequency. The magnetic-field detection limit of the laminated composite was found to be as low as 200 fT in direct measurements without any additional shielding from external noises.publishe

Determination of stoichiometry deviation in wide-band II–VI semiconductors on the basis of equilibrium vapor phase composition

A method has been suggested for determining stoichiometry deviation in cadmium and zinc chalcogenides based on the temperature dependence of the ratio of components partial pressures during evaporation of solid compounds in a limited volume. The new method differs from methods implying the collection of excessive component during evaporation in large volumes. The method includes measuring the partial pressures of vapor phase components during material heating to above 800 K, solving a set of material balance equations and the electric neutrality equation, and calculating the stoichiometry deviation in the initial compound at room temperature. Intrinsic point defect concentrations are calculated using the method of quasichemical reactions. The independent variables in the set of material balance equations are the sought stoichiometry deviation, the partial pressure of the metal and the concentration of free electrons. We show that the parameter of the material balance equation which determines the method’s sensitivity to stoichiometry deviation, i.e., the volume ratio of vapor and solid phases, can be considered constant during heating and evaporation if this parameter does not exceed 50. If the partial pressure is measured based on the optical density of the vapors, then the sensitivity of the method can be increased to not worse than 10–6 at.%

Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon

Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause of azimuthal electrical resistivity distribution inhomogeneity is the swirl-like structure of the melt under the crystallization front (CF), while a possible cause of radial electrical resistivity distribution inhomogeneity is the CF curvature. In a specific range of the Grashof, Marangoni and Reynolds numbers which depend on the ratio of melt height and growing crystal radius, a system of well-developed radially oriented swirls may emerge under the rotating CF. In the absence of such swirls the melt is displaced from under the crystallization front in a homogeneous manner to form thermal and concentration boundary layers which are homogeneous in azimuthal direction but have clear radial inhomogeneity. Once swirls emerge the melt is displaced from the center to the periphery, and simultaneous fluid motion in azimuthal direction occurs. The overall melt motion becomes helical as a result. The number of swirls (two to ten) agrees with the number of azimuthally directed electrical resistivity distribution inhomogeneities observed in the experiments. Comparison of numerical simulation results in a wide range of Prandtl numbers with the experimental data suggests that the phenomena observed in transparent fluids are universal and can be used for theoretical interpretation of imperfections in silicon single crystals

Experimental confirmation of a new method for selective neutron separation

The article presents an experimental confirmation of the operability of neutron concentrators in devices that form and use directed high-intensity thermal neutron beams with elliptical channels made as blocks of profiled graphite and aluminum plates. The effect of neutron reflection from the surface of materials is the basis of a device capable of selecting neutrons by their directions in space. The study experimentally confirmed the efficiency of a moderating-focusing structure (MFS) based on a pack of elliptical neutron mirrors, which makes it possible to form oriented thermal neutron beams from the outgoing neutron flux. To record the effects of selective thermal neutron separation, silicon single-crystal wafers were used, due to which it was possible to obtain portraits of integral neutron fluxes in the reactor. The experiments were carried out in a horizontal experimental channel (HEC-4) at the IRT-T reactor of the National Research Tomsk Polytechnic University. The integral neutron flux was (2.3–3.02)·1017 cm–2. The neutron flux was detected by the change in the specific electrical resistivity of the single-crystal silicon wafers. The effect of concentration of thermal neutrons was recorded both on the block of graphite neutron mirrors and on the block of aluminum thin-walled elliptical mirrors. In the near future, on this basis, it will be possible to solve such problems as extending the reactor life by reducing the hydrogen uptake in the inner walls. In addition, the experiments have proved the possibility of creating anisotropic structures that lie outside the formalism of Liouville’s theorem, in which the surfaces of thermal neutron sinks are formed with subsequent concentration in the areas separated by aluminum or graphite plates

Experimental confirmation of a new method for selective neutron separation

The article presents an experimental confirmation of the operability of neutron concentrators in devices that form and use directed high-intensity thermal neutron beams with elliptical channels made as blocks of profiled graphite and aluminum plates. The effect of neutron reflection from the surface of materials is the basis of a device capable of selecting neutrons by their directions in space. The study experimentally confirmed the efficiency of a moderating-focusing structure (MFS) based on a pack of elliptical neutron mirrors, which makes it possible to form oriented thermal neutron beams from the outgoing neutron flux. To record the effects of selective thermal neutron separation, silicon single-crystal wafers were used, due to which it was possible to obtain portraits of integral neutron fluxes in the reactor. The experiments were carried out in a horizontal experimental channel (HEC-4) at the IRT-T reactor of the National Research Tomsk Polytechnic University. The integral neutron flux was (2.3–3.02)·1017 cm–2. The neutron flux was detected by the change in the specific electrical resistivity of the single-crystal silicon wafers. The effect of concentration of thermal neutrons was recorded both on the block of graphite neutron mirrors and on the block of aluminum thin-walled elliptical mirrors. In the near future, on this basis, it will be possible to solve such problems as extending the reactor life by reducing the hydrogen uptake in the inner walls. In addition, the experiments have proved the possibility of creating anisotropic structures that lie outside the formalism of Liouville’s theorem, in which the surfaces of thermal neutron sinks are formed with subsequent concentration in the areas separated by aluminum or graphite plates

Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium

We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion

Contact and contactless porous silicon parameter measurement techniques

In this work we have used contact and contactless techniques to measure the electrical resistivity of single crystal silicon wafers with porous layers of variable thickness synthesized on the surface. The porous layers have been synthesized on the surfaces of single crystal wafers with well pronounced microroughness pattern, either textured or grinded. We have used the classic four-probe method with a linear probe arrangement as the contact measurement technique, and the resonance microwave method based on microwave absorption by free carriers as the contactless measurement technique. Electrical resistivity distribution over the specimen surface has been mapped based on the measurement results. We have demonstrated a general agreement between the electrical resistivity distribution patterns as measured using the contact and contactless measurement techniques. To analyze the electrical resistivity scatter over the specimen surface area we have simulated the field distribution in the electrolyte during porous layer formation in a non-planar anode cell. The regularities of the electrical resistivity spatial distribution in different types of specimens are accounted for by specific porosity formation mechanisms which in turn are controlled by the initial microroughness pattern and the field distribution pattern in the electrolyte for each specific case