Development of CCDs for REXIS on OSIRIS-REx

The Regolith x-ray Imaging Spectrometer (REXIS) is a coded-aperture soft x-ray imaging instrument on the OSIRIS-REx spacecraft to be launched in 2016. The spacecraft will fly to and orbit the near-Earth asteroid Bennu, while REXIS maps the elemental distribution on the asteroid using x-ray fluorescence. The detector consists of a 2×2 array of backilluminated 1k×1k frame transfer CCDs with a flight heritage to Suzaku and Chandra. The back surface has a thin p[superscript +]-doped layer deposited by molecular-beam epitaxy (MBE) for maximum quantum efficiency and energy resolution at low x-ray energies. The CCDs also feature an integrated optical-blocking filter (OBF) to suppress visible and near-infrared light. The OBF is an aluminum film deposited directly on the CCD back surface and is mechanically more robust and less absorptive of x-rays than the conventional free-standing aluminum-coated polymer films. The CCDs have charge transfer inefficiencies of less than 10[superscript -6], and dark current of 1e-/pixel/second at the REXIS operating temperature of –60 °C. The resulting spectral resolution is 115 eV at 2 KeV. The extinction ratio of the filter is ~10[superscript 12] at 625 nm.United States. National Aeronautics and Space Administration. Strategic Astrophysics Technology Program (Grant NNX12AF22G)United States. National Aeronautics and Space Administration (Contract NNG12FD70C)United States. National Aeronautics and Space Administration (IPR NNG12FC01I)United States. National Aeronautics and Space Administration. Strategic Astrophysics Technology Program (IPR NNH12AU04I)United States. Air Force (Contract FA8721-05-C-0002

Testing and characterization of the TESS CCDs

The Transiting Exoplanet Survey Satellite (TESS) is an Explorer-class mission dedicated to finding planets around bright, nearby stars so that more detailed follow-up studies can be done. TESS is due to launch in 2017 and careful characterization of the detectors will need to be completed on ground before then to ensure that the cameras will be within their photometric requirement of 60ppm/hr. TESS will fly MITLincoln Laboratories CCID-80s as the main scientific detector for its four cameras. They are 100μm deep depletion devices which have low dark current noise levels and can operate at low light levels at room temperature. They also each have a frame store region, which reduces smearing during readout and allows for near continuous integration. This paper describes the hardware and methodology that were developed for testing and characterizing individual CCID-80s. A dark system with no stimuli was used to measure the dark current. Fe 55 and Cd 109 X-ray sources were used to establish gain at low signal levels and its temperature dependence. An LED system that generates a programmable series of pulses was used in conjunction with an integrating sphere to measure pixel response non-uniformity (PRNU) and gain at higher signal levels. The same LED system was used with a pinhole system to evaluate the linearity and charge conservation capability of the CCID-80s.United States. National Aeronautics and Space Administration (contract number NNG14FC03C

[High-Performance Active Pixel X-Ray Sensors for X-Ray Astronomy]

The subject grants support development of High-Performance Active Pixel Sensors for X-ray Astronomy at the Massachusetts Institute of Technology (MIT) Center for Space Research and at MIT's Lincoln Laboratory. This memo reports our progress in the second year of the project, from April, 2004 through the present

Guest Editorial Introduction to the Special Issue on the 2022 IEEE International Solid-State Circuits Conference (ISSCC)

The International Technical Program Committee (ITPC) of the IEEE International Solid-State Circuits Conference (ISSCC) selects outstanding articles from the papers presented at the conference and invites the authors to submit an extended manuscript to the Special Issue of IEEE Journal of Solid-State Circuits (JSSC). This November issue contains the selected papers from the Imagers, microelectromechanical systems (MEMS), and Displays (IMMD) and the Technology Directions (TD) sub-committees. Papers from Analog, Data Converters, Power Management, RF, and Wireless subcommittees are included in the December issue. Finally, the January issue will contain papers from Digital Architectures and Systems, Digital Circuits, Machine Learning, Memory, and Wireline subcommittees.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Quantum Circuit Architectures and Technolog

Interpixel crosstalk in a 3D-integrated active pixel sensor for x-ray detection

MIT Lincoln Laboratories and MIT Kavli Institute for Astrophysics and Space Research have developed an active pixel sensor for use as a photon counting device for imaging spectroscopy in the soft X-ray band. A silicon-on-insulator (SOI) readout circuit was integrated with a high-resistivity silicon diode detector array using a per-pixel 3D integration technique developed at Lincoln Laboratory. We have tested these devices at 5.9 keV and 1.5 keV. Here we examine the interpixel cross-talk measured with 5.9 keV X-rays.United States. National Aeronautics and Space Administration (NASA) (Grant NNG06WC08G

Measurement results for an x-ray 3D-integrated active pixel sensor

We have developed a hybrid Active Pixel Sensor for detecting low energy X-rays. The sensor consists of a silicon diode detector array built on a high resistivity wafer and an SOI CMOS readout circuit, connected together by means of unique 3D integration technology developed at MIT Lincoln Laboratory. In this paper we will describe measurements of sense node capacitance and device depletion depth along with corresponding simulations aimed to optimize device performance. We also describe race condition in the column decoder and identify ways to eliminate it in order to reduce fixed pattern noise.United States. National Aeronautics and Space Administration (NASA) (Grant NNG06WC08G

Characterization of Three-Dimensional-Integrated Active Pixel Sensor for X-Ray Detection

We have developed a back-illuminated active pixel sensor (APS) which includes an SOI readout circuit and a silicon diode detector array implemented in a separate high-resistivity wafer. Both are connected together using a per-pixel 3-D integration technique developed at Lincoln Laboratory. The device was fabricated as part of a program to develop a photon-counting APS for imaging spectroscopy in the soft X-ray (0.3-10-keV) spectral band. Here, we report single-pixel X-ray response with spectral resolution of 181-eV full-width at half-maximum at 5.9 keV. The X-ray data allow us to characterize the responsivity and input-referred noise properties of the device. We measured interpixel crosstalk and found large left-right asymmetry explained by coupling of the sense node to the source follower output. We have measured noise parameters of the SOI transistors and determined factors which limit the device performance.United States. National Aeronautics and Space Administration (Grant NNG06WC08G

A 4-side tileable back illuminated 3D-integrated Mpixel CMOS image sensor

The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost. While highly capable chips, these monolithic image sensors devote substantial perimeter area to signal acquisition and control circuitry and trade off pixel complexity for fill factor. For applications such as wide-area persistent surveillance, reconnaissance, and astronomical sky surveys it is desirable to have simultaneous near-real-time imagery with fast, wide field-of-view coverage. Since the fabrication of a complex large-format sensor on a single piece of silicon is cost and yield-prohibitive and is limited to the wafer size, for these applications many smaller-sized image sensors are tiled together to realize very large arrays. Ideally the tiled image sensor has no missing pixels and the pixel pitch is continuous across the seam to minimize loss of information content. CCD-based imagers have been favored for these large mosaic arrays because of their low noise and high sensitivity, but CMOS-based image sensors bring architectural benefits, including electronic shutters, enhanced radiation tolerance, and higher data-rate digital outputs that are more easily scalable to larger arrays. In this report the first back-illuminated, 1 Mpixel, 3D-integrated CMOS image sensor with 8 mum-pitch 3D via connections. The chip employs a conventional pixel layout and requires 500 mum of perimeter silicon to house the support circuitry and protect the array from saw damage. In this paper we present a back-illuminated 1 Mpixel CMOS image sensor tile that includes a 64-channel vertically integrated ADC chip stack, and requires only a few pixels of silicon perimeter to the pixel array. The tile and system connector design support 4-side abuttability and fast burst data rates.United States. Air Force (Contract # FA8721-05-C-0002

Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits

In this work, we modified our wafer-scale 3D integration technique, originally developed for Si, to hybridize InP-based image sensor arrays with Si readout circuits. InGaAs image arrays based on the InGaAs layer grown on InP substrates were fabricated in the same processing line as silicon-on-insulator (SOI) readout circuits. The finished 150-mm-diameter InP wafer was then directly bonded to the SOI wafer and interconnected to the Si readout circuits by 3D vias. A 1024 times 1024 diode array with 8-mum pixel size is demonstrated. This work shows the wafer-scale 3D integration of a compound semiconductor with Si.Defence Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002