81,899 research outputs found

    Relic density at one-loop with gauge boson pair production

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    We have computed the full one-loop corrections (electroweak as well as QCD) to processes contributing to the relic density of dark matter in the MSSM where the LSP is the lightest neutralino. We cover scenarios where the most important channels are those with gauge boson pair production. This includes the case of a bino with some wino admixture, a higgsino and a wino. In this paper we specialise to the case of light dark matter much below the TeV scale. The corrections can have a non-negligible impact on the predictions and should be taken into account in view of the present and forthcoming increasing precision on the relic density measurements. Our calculations are made with the help of \SloopS, an automatic tool for the calculation of one-loop processes in the MSSM. The renormalisation scheme dependence of the results as concerns \tgb is studied.Comment: 25 pages, 10 figures, Citations adde

    Projection Measurement of the Maximally Entangled N-Photon State for a Demonstration of N-Photon de Broglie Wavelength

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    We construct a projection measurement process for the maximally entangled N-photon state (the NOON-state) with only linear optical elements and photodetectors. This measurement process will give null result for any N-photon state that is orthogonal to the NOON state. We examine the projection process in more detail for N=4 by applying it to a four-photon state from type-II parametric down-conversion. This demonstrates an orthogonal projection measurement with a null result. This null result corresponds to a dip in a generalized Hong-Ou-Mandel interferometer for four photons. We find that the depth of the dip in this arrangement can be used to distinguish a genuine entangled four-photon state from two separate pairs of photons. We next apply the NOON state projection measurement to a four-photon superposition state from two perpendicularly oriented type-I parametric down-conversion processes. A successful NOON state projection is demonstrated with the appearance of the four-photon de Broglie wavelength in the interference fringe pattern.Comment: 8 pages, 3 figures, new title, some content change, replaced Fig.

    Ground-state phases of rung-alternated spin-1/2 Heisenberg ladder

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    The ground-state phase diagram of Heisenberg spin-1/2 system on a two-leg ladder with rung alternation is studied by combining analytical approaches with numerical simulations. For the case of ferromagnetic leg exchanges a unique ferrimagnetic ground state emerges, whereas for the case of antiferromagnetic leg exchanges several different ground states are stabilized depending on the ratio between exchanges along legs and rungs. For the more general case of a honeycomb-ladder model for the case of ferromagnetic leg exchanges besides usual rung-singlet and saturated ferromagnetic states we obtain a ferrimagnetic Luttinger liquid phase with both linear and quadratic low energy dispersions and ground state magnetization continuously changing with system parameters. For the case of antiferromagnetic exchanges along legs, different dimerized states including states with additional topological order are suggested to be realized

    B/P Doping in
 application of 
silicon oxynitride based integrated
 optics

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    In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers

    Constant-temperature molecular-dynamics algorithms for mixed hard-core/continuous potentials

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    We present a set of second-order, time-reversible algorithms for the isothermal (NVT) molecular-dynamics (MD) simulation of systems with mixed hard-core/continuous potentials. The methods are generated by combining real-time Nose' thermostats with our previously developed Collision Verlet algorithm [Mol. Phys. 98, 309 (1999)] for constant energy MD simulation of such systems. In all we present 5 methods, one based on the Nose'-Hoover [Phys. Rev. A 31, 1695 (1985)] equations of motion and four based on the Nose'-Poincare' [J.Comp.Phys., 151 114 (1999)] real-time formulation of Nose' dynamics. The methods are tested using a system of hard spheres with attractive tails and all correctly reproduce a canonical distribution of instantaneous temperature. The Nose'-Hoover based method and two of the Nose'-Poincare' methods are shown to have good energy conservation in long simulations.Comment: 9 pages, 5 figure

    Epitaxial graphene on SiC(0001): More than just honeycombs

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    The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers
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