Model for self-consistent analysis of arbitrary MQW structures

Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of the gain and the absorption spectra, for the analysis of the capture, escape, tunneling, recombination, and relaxation phenomena and as a consequence it can be used for studying dynamical behavior of semiconductor lasers and amplifiers. However, many authors use non-entirely correct ways for the application of the method. In this paper the versatile model is proposed for the investigation, optimization, and the control of parameters of the semiconductor lasers and optical amplifiers which may be employed for the creation of new generations of the high-density photonic systems for the information processing and data transfer, follower and security arrangements. The model is based on the coupled Schredinger, Poisson and drift-diffusion equations which allow to determine energy quantization levels and wave functions of charge carriers, take into account built-in fields, and to investigate doped MQW structures and those under external electric fields influence. In the paper the methodology of computer realization based on our model is described. Boundary conditions for each equation and consideration of the convergence for the method are included. Frequently encountered in practice approaches and errors of self-consistent computations are described. Domains of applicability of the main approaches are estimated. Application examples of the method are given. Some of regularities of the results which were discovered by using self-consistent method are discussed. Design recommendations for structure optimization in respect to managing some parameters of AMQW structures are given.Comment: 12 pages, 2 table, 4 figures, Optics East Symposium, Conference on Physics and Applications of Optoelectronic Devices, October 25-28, 2004, Philadelphia, Pennsylvania, US

Semiconductor THz Lasers and Their Applications in Spectroscopy of Explosives

Recently, applications of THz spectroscopy for detecting explosive agents have attracted much attention due to following reasons: many CBRNE agents have fingerprint-like features in the THz wavelength range; the THz spectroscopy provides an ability for remote and non-destructive identification of explosives; the THz radiation penetrates through many covering dielectric materials including paper, leather, fabric and so on. One of the most important components of THz spectroscopy setups is the source of THz radiation, which has to be high-power, tunable, low-cost and to have compact sizes. In this chapter, we are going to overview recent progress of wide variety of THz emitters considered as candidates for that role. We will pay a special attention to recent trends in engineering of spectral characteristics of THz quantum-cascade lasers and their tunability. Also we will describe the advantages and difficulties that accompany a THz spectroscopy of explosives

How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers

Both radiative and nonradiative processes which occur in the active region of GaInAs–GaInAsP–InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of the investigated processes are presented. For the above-mentioned AMQW heterostructure, it is shown that the influence of the Auger recombination processes on the temperature behaviour of the lasing threshold can be restrained by operation at temperatures lower than 340 K and the cavity losses which do not exceed 60 cm-1

Auger Recombination Processes and Threshold Conditions in Asymmetric-Multiple-Quantum-Well Heterostructure Lasers

Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effective parameters of the processes are calculated. For described asymmetric quantum-well heterostructure lasers, it is shown that the influence of the Auger recombination processes on the temperature behavior of the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed 80 cm-