Different possible processes of non-radiative Auger recombination which occur in the active region
of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the
GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is
determined. Activated behavior of the Auger recombination is mentioned and respective effective parameters
of the processes are calculated. For described asymmetric quantum-well heterostructure lasers, it is shown that
the influence of the Auger recombination processes on the temperature behavior of the lasing threshold is not
essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed
80 cm-
