Atomistic modelling of large-scale metal film growth fronts

We present simulations of metallization morphologies under ionized sputter deposition conditions, obtained by a new theoretical approach. By means of molecular dynamics simulations using a carefully designed interaction potential, we analyze the surface adsorption, reflection, and etching reactions taking place during Al physical vapor deposition, and calculate their relative probability. These probabilities are then employed in a feature-scale cellular-automaton simulator, which produces calculated film morphologies in excellent agreement with scanning-electron-microscopy data on ionized sputter deposition.Comment: RevTeX 4 pages, 2 figure

Anisotropy of Growth of the Close-Packed Surfaces of Silver

The growth morphology of clean silver exhibits a profound anisotropy: The growing surface of Ag(111) is typically very rough while that of Ag(100) is smooth and flat. This serious and important difference is unexpected, not understood, and hitherto not observed for any other metal. Using density functional theory calculations of self-diffusion on flat and stepped Ag(100) we find, for example, that at flat regions a hopping mechanism is favored, while across step edges diffusion proceeds by an exchange process. The calculated microscopic parameters explain the experimentally reported growth properties.Comment: RevTeX, 4 pages, 3 figures in uufiles form, to appear in Phys. Rev. Let

Hastes florais de cenoura: uma opção para a floricultura.

bitstream/item/33614/1/documento-175.pd

Physics of the Be(101̅0) Surface Core Level Spectrum

Photoelectron diffraction has been utilized to confirm the theoretical prediction that the surface core level shifts observed for Be(101̅0) have been improperly assigned. The original assignment based upon the relative intensity of the shifted components was intuitively obvious: the peak with the largest shift of −0.7eV with respect to the bulk was associated with the surface plane, the next peak shifted by −0.5eV stems from the second layer, and the third peak at −0.22eV from the third and fourth layers. First-principles theory and our experimental data show that the largest shift is associated with the second plane, not the first plane

Phonon softening and superconductivity in tellurium under pressure

The phonon dispersion and the electron-phonon interaction for the $\beta$-Po and the bcc high pressure phases of tellurium are computed with density-functional perturbation theory. Our calculations reproduce and explain the experimentally observed pressure dependence of the superconducting critical temperature (T$_{\rm c}$) and confirm the connection between the jump in T$_{\rm c}$ and the structural phase transition. The phonon contribution to the free energy is shown to be responsible for the difference in the structural transition pressure observed in low and room temperature experiments.Comment: Revtex, 4 Postscript figures, to appear in Phys. Rev. Let

Inhibited Al diffusion and growth roughening on Ga-coated Al (100)

Ab initio calculations indicate that the ground state for Ga adsorption on Al (100) is on-surface with local unit coverage. On Ga-coated Al (100), the bridge diffusion barrier for Al is large, but the Al$\rightarrow$Ga {\it exchange barrier is zero}: the ensuing incorporation of randomly deposited Al's into the Ga overlayer realizes a percolation network, efficiently recoated by Ga atoms. Based on calculated energetics, we predict rough surface growth at all temperatures; modeling the growth by a random deposition model with partial relaxation, we find a power-law divergent roughness $w\sim t^{\,0.07\pm0.02}$.Comment: 4 pages RevTeX-twocolumn, no figures. to appear in Phys. Rev. Lett., July 199

Localized Excitons and Breaking of Chemical Bonds at III-V (110) Surfaces

Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results show that Frenkel-type autolocalized excitons are formed. The excitons induce a local surface unrelaxation which results in a strong exciton-exciton attraction and makes complexes of two or three electron-hole pairs more favorable than separate excitons. In such microscopic exciton "droplets" the electron density is mainly concentrated in the dangling orbital of a surface Ga atom whereas the holes are distributed over the bonds of this atom to its As neighbors thus weakening the bonding to the substrate. This finding suggests the microscopic mechanism of a laser-induced emission of neutral Ga atoms from GaAs and GaP (110) surfaces.Comment: submitted to PRL, 10 pages, 4 figures available upon request from: [email protected]

A machine learning pipeline for discriminant pathways identification

Motivation: Identifying the molecular pathways more prone to disruption during a pathological process is a key task in network medicine and, more in general, in systems biology. Results: In this work we propose a pipeline that couples a machine learning solution for molecular profiling with a recent network comparison method. The pipeline can identify changes occurring between specific sub-modules of networks built in a case-control biomarker study, discriminating key groups of genes whose interactions are modified by an underlying condition. The proposal is independent from the classification algorithm used. Three applications on genomewide data are presented regarding children susceptibility to air pollution and two neurodegenerative diseases: Parkinson's and Alzheimer's. Availability: Details about the software used for the experiments discussed in this paper are provided in the Appendix