Температурный коэффициент сопротивления легированных редкоземельными элементами наноструктурированных пленок кремния

The regularities of changes in the concentration of an electrically active dopant in a nanostructured silicon film by changing the electrical resistivity depending on the doping conditions were investigated. The dependences of the changes in the obtained structures doped with rare-earth elements, such as La, Eu, Sm, Dy, Gd (lanthanides), on nanostructured silicon films are determined. The regularities of the obtained films changes and the temperature coefficient of resistance (TCR) change depending on the formation conditions are established. The regularities of the TCR are shown depending on the selected conditions for doping or non-doping of nanostructured silicon films with various impurities. It is shown that the main conditions under which the effect and change in the temperature coefficient of resistors resistance on thin films using rare-earth elements, such as oxygen, boron and phosphorus in the bulk of the film, is considered to be the temperature effect after deposition.Исследовались закономерности изменения концентрации электрически активной легирующей примеси в пленке наноструктурированного кремния, путем изменения удельного электрического сопротивления в зависимости от условий легирования. Определены зависимости изменения полученных структур, легированных редкоземельными элементами (РЗЭ), такими как La, Eu, Sm, Dy, Gd (лантаноиды), на наноструктурированных пленках кремния. Установлены закономерности изменения полученных пленок и изменение температурного коэффициента сопротивления (ТКС) в зависимости от условий формирования. Показаны закономерности изменения ТКС в зависимости от выбранных условий легирования или нелегирования различными примесями наноструктурированных пленок кремния. Показано, что основными условиями, при которых показано воздействие и изменение температурного коэффициента сопротивления резисторов на тонких пленках с использованием РЗЭ, таких как кислород, бор и фосфор, в объеме пленки, считается температурное влияние уже после осаждения

Temperature resistance coefficient of doped with rare earth elements nanostructured silicon films

Исследовались закономерности изменения концентрации электрически активной легирующей примеси в пленке наноструктурированного кремния, путем изменения удельного электрического сопротивления в зависимости от условий легирования. Определены зависимости изменения полученных структур, легированных редкоземельными элементами (РЗЭ), такими как La, Eu, Sm, Dy, Gd (лантаноиды), на наноструктурированных пленках кремния. Установлены закономерности изменения полученных пленок и изменение температурного коэффициента сопротивления (ТКС) в зависимости от условий формирования. Показаны закономерности изменения ТКС в зависимости от выбранных условий легирования или нелегирования различными примесями наноструктурированных пленок кремния. Показано, что основными условиями, при которых показано воздействие и изменение температурного коэффициента сопротивления резисторов на тонких пленках с использованием РЗЭ, таких как кислород, бор и фосфор, в объеме пленки, считается температурное влияние уже после осаждения.The regularities of changes in the concentration of an electrically active dopant in a nanostructured silicon film by changing the electrical resistivity depending on the doping conditions were investigated. The dependences of the changes in the obtained structures doped with rare-earth elements, such as La, Eu, Sm, Dy, Gd (lanthanides), on nanostructured silicon films are determined. The regularities of the obtained films changes and the temperature coefficient of resistance (TCR) change depending on the formation conditions are established. The regularities of the TCR are shown depending on the selected conditions for doping or non-doping of nanostructured silicon films with various impurities. It is shown that the main conditions under which the effect and change in the temperature coefficient of resistors resistance on thin films using rare-earth elements, such as oxygen, boron and phosphorus in the bulk of the film, is considered to be the temperature effect after deposition

Использование ИКТ-технологий для реализации образовательных программ в форме соискательства и в рамках аспирантуры для иностранных граждан

Factors affecting the effectiveness of video surveillance systems are considered, surveillance zones and blind zones calculating algorithms and their use in the developed program are presented

РАЗЛОЖЕНИЕ МОНОГИДРИДОВ КРЕМНИЯ И ГЕРМАНИЯ С ИСПОЛЬЗОВАНИЕМ ПЛАТИНО-РЕНИЕВОЙ ШПИНЕЛИ В КАЧЕСТВЕ КАТАЛИЗАТОРА

High degree of intensification of monohydrides decomposition process with use of catalysts is shown. It is established that the completeness decomposition of monohydrides in the presenceof platinoreniyevy spinel increases for 35-55 %.Показана высокая степень интенсификации процесса разложения моногидридов с использованием катализаторов. Установлено, что полнота при разложении моногидридов в присутствии платинорениевой шпинели возрастает на 35-55%

Комплексная оценка речевого развития детей, зачатых с помощью экстракорпорального оплодотворения

Introduction. The high frequency of the use of assisted reproductive technologies and the inconsistency of information about the parameters of the cognitive development of IVF children determined the formulation of the research problem.The purpose of the work is to assess the originality of the speech development of children and adolescents conceived using the IVF procedure. The age of the children at the time of the survey was from 5 to 15 years.Methods and materials. A sample of 51 children (29 boys), mean age (7.9±2.8) years, 14 children had psychiatric diagnoses (ASD, mental retardation, etc.). Research methods: speech therapy assessment of speech development, neuropsychological diagnostics according to L.S. Tsvetkova, WICS, descriptive statistics, correlation analysis.Results. 41% of children had mild variants of speech development delay under 3 years old, 59 % of children had normal speech development. With age, the frequency of detected deviations in speech development decreases, so that in older age group (from 11 to 15 years old), 85 % have normotypical development of speech. Correlation analysis showed the originality of the correlations of the parameters of speech development, neuropsychological assessment, and scores on Wechsler subtests.Conclusions. An unambiguous conclusion about the violation of speech development in children conceived by IVF cannot be drawn, however, in the presence of mental pathology and taking into account the age of the mother and the number of ART procedures, attention should be paid to the provision of speech therapy and neuropsychological correction from an early age.Введение. Высокая частота использования вспомогательных репродуктивных технологий (ВРТ) и противоречивость информации о параметрах когнитивного развития детей, зачатых с помощью экстракорпорального оплодотворения (ЭКО) определила постановку проблемы исследования.Цель работы — оценка своеобразия речевого развития детей и подростков, зачатых с помощью процедуры ЭКО и находящихся в возрастном интервале от 5 до 15 лет.Методы и материалы. Выборка из 51 ребенка (29 мальчиков), средний возраст — (7,9±2,8) года, 14 детей имели психиатрические диагнозы (расстройства аутистического спектра(РАС), шизотипическое расстройство (ШТР) и др.). Применяли логопедическую оценку развития речи, нейропсихологическую диагностику по Л.С. Цветковой, диагностику IQ по Векслеру, описательную статистику, корреляционный анализ.Результаты. У 41 % детей имелись легкие варианты задержки речевого развития в возрасте до 3 лет, нормативно развивалась речь у 59 % детей. С возрастом частота выявляемых отклонений в речевом развитии падает, в старшей возрастной группе (от 11 до 15 лет) норма развития речи встречалась у 85 % испытуемых. Корреляционный анализ показал своеобразие корреляционных плеяд у детей, зачатых с помощью ЭКО, при сопоставлении параметров речевого развития, нейропсихологической оценки, баллов по субтестам Векслера.Заключение. Однозначного вывода о нарушении речевого развития у детей, рожденных с помощью ЭКО, сделать нельзя, однако при наличии психической патологии и с учетом возраста матери и числа применения процедур ВРТ следует обратить внимание на оказание логопедической и нейропсихологической коррекции с раннего возраста

Observation Of Very High Energy Cosmic-ray Families In Emulsion Chambers At High Mountain Altitudes (i)

Characteristics of cosmic-ray hadronic interactions in the 1015 - 1017 eV range are studied by observing a total of 429 cosmic-ray families of visible energy greater than 100 TeV found in emulsion chamber experiments at high mountain altitudes, Chacaltaya (5200 m above sea level) and the Pamirs (4300 m above sea level). Extensive comparisons were made with simulated families based on models so far proposed, concentrating on the relation between the observed family flux and the behaviour of high-energy showers in the families, hadronic and electromagnetic components. It is concluded that there must be global change in characteristics of hadronic interactions at around 1016 eV deviating from thise known in the accelerator energy range, specially in the forwardmost angular region of the collision. A detailed study of a new shower phenomenon of small-pT particle emissions, pT being of the order of 10 MeV/c, is carried out and its relation to the origin of huge "halo" phenomena associated with extremely high energy families is discussed as one of the possibilities. General characteristics of such super-families are surveyed. © 1992.3702365431Borisov, (1981) Nucl. Phys., 191 BBaybrina, (1984) Trudy FIAN 154, p. 1. , [in Russian], Nauka, MoscowLattes, Hadronic interactions of high energy cosmic-ray observed by emulsion chambers (1980) Physics Reports, 65, p. 151Hasegawa, ICR-Report-151-87-5 (1987) presented at FNAL CDF Seminar, , Inst. for Cosmic Ray Research, Univ. of TokyoCHACALTAYA Emulsion Chamber Experiment (1971) Progress of Theoretical Physics Supplement, 47, p. 1Yamashita, Ohsawa, Chinellato, (1984) Proc. 3rd Int. Symp. on Cosmic Rays and Particle Physics, p. 30. , Tokyo, 1984, Inst. for Cosmic Ray Research, Univ. of Tokyo(1984) Proc. 3rd Int. Symp. on Cosmic Rays and Particle Physics, p. 1. , Tokyo, 1984Baradzei, (1984) Proc. 3rd Int. Symp. on Cosmic Rays and Particle Physics, p. 136. , Tokyo, 1984Yamashita, (1985) J. Phys. Soc. Jpn., 54, p. 529Bolisov, (1984) Proc. 3rd Int. Symp. on Cosmic rays and Particle Physics, p. 248. , Tokyo, 1984, Inst. for Cosmic Ray Research, Univ. of TokyoTamada, Tomaszewski, (1988) Proc. 5th Int. Symp. on Very High Energy Cosmic-Ray Interactions, p. 324. , Lodz, 1988, Inst. for Cosmic Ray Research, Univ. of Tokyo, PolandHasegawa, (1989) ICR-Report-197-89-14, , Inst. for Cosmic Ray Research, Univ. of TokyoCHACALTAYA Emulsion Chamber Experiment (1971) Progress of Theoretical Physics Supplement, 47, p. 1Okamoto, Shibata, (1987) Nucl. Instrum. Methods, 257 A, p. 155Zhdanov, (1980) FIAN preprint no. 45, , Lebedev Physical Institute, MoscowSemba, Gross Features of Nuclear Interactions around 1015eV through Observation of Gamma Ray Families (1983) Progress of Theoretical Physics Supplement, 76, p. 111Nikolsky, (1975) Izv. Akad. Nauk. USSR Ser. Fis., 39, p. 1160Burner, Energy spectra of cosmic rays above 1 TeV per nucleon (1990) The Astrophysical Journal, 349, p. 25Takahashi, (1990) 6th Int. Symp. on Very High Energy Cosmic-ray Interactions, , Tarbes, FranceRen, (1988) Phys. Rev., 38 D, p. 1404Alner, The UA5 high energy simulation program (1987) Nuclear Physics B, 291 B, p. 445Bozzo, Measurement of the proton-antiproton total and elastic cross sections at the CERN SPS collider (1984) Physics Letters B, 147 B, p. 392Wrotniak, (1985) Proc. 19th Cosmic-Ray Conf. La Jolla, 1985, 6, p. 56. , NASA Conference Publication, Washington, D.CWrotniak, (1985) Proc. 19th Cosmic-Ray Conf. La Jolla, 1985, 6, p. 328. , NASA Conference Publication, Washington, D.CMukhamedshin, (1984) Trudy FIAN, 154, p. 142. , Nauka, Moscow, [in Russian]Dunaevsky, Pluta, Slavatinsky, (1988) Proc. 5th Int. Symp. on Very High Energy Cosmic-Ray Interactions, p. 143. , Lodz, 1988, Inst. of Physics, Univ. of Lodz, PolandKaidalov, Ter-Martirosyan, (1987) Proc. 20th Int. Cosmic-Ray Conf., Moscow, 1987, 5, p. 141. , Nauka, MoscowShabelsky, (1985) preprints LNPI-1113Shabelsky, (1986) preprints LNPI-1224, , Leningrad [in Russian]Hillas, (1979) Proc. 16th Int. Cosmic-Ray Conf., Kyoto, 6, p. 13. , Inst. for Cosmic Ray Research, Univ. of TokyoBorisov, (1987) Phys. Lett., 190 B, p. 226Hasegawa, Tamada, (1990) 6th Int. Symp. on Very High Energy Cosmic-Ray Interactions, , Tarbes, FranceSemba, Gross Features of Nuclear Interactions around 1015eV through Observation of Gamma Ray Families (1983) Progress of Theoretical Physics Supplement, p. 111Ren, (1988) Phys. Rev., 38 D, p. 1404Dynaevsky, Zimin, (1988) Proc. 5th Int. Symp. on Very High Energy Cosmic-Ray Interaction, p. 93. , Lodz, 1988, Inst. of Physics, Univ. of Lodz, PolandDynaevsky, (1990) Proc. 6th Int. Symp. on Very High Energy Cosmic-Ray Interactions, , Tarbes, France(1989) FIAN preprint no. 208, , Lebedev Physical Institute, Moscow(1990) Proc. 21st Int. Cosmic-Ray Conf., Adelaide, 8, p. 259. , Dept. Physics and Mathematical Physics, Univ. of Adelaide, AustraliaHasegawa, (1990) ICR-Report-216-90-9, , Inst. for Cosmic-Ray Research, Univ. of TokyoTamada, (1990) Proc. 21st Int. Cosmic-Ray Conf., Adelaide, 1990, 8. , Dept. Physics and Mathematical Physics, Univ. of Adelaide, AustraliaTamada, (1990) ICR-Report-216-90-9(1981) Proc. 17th Int. Cosmic-Ray Conf., Paris, 5, p. 291(1990) Proc. Int. Cosmic-Ray Conf., Adelaide, 1990, 8, p. 267. , Dept. Physics and Mathematical Physics, Univ. of Adelaide, Australia(1989) Inst. Nucl. Phys. 89-67/144, , preprint, Inst. Nucl. 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Cosmic-Ray Conf., Moscow, 1987, 5, p. 326. , Nauka, Mosco

Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium

The impact of germanium as isovalent impurity on the process of formation of nanostructured films of polycrystalline silicon doped with germanium is investigated

Термодинамический анализ основных реакций в системе кремний-титан при самораспространяющемся высокотемпературном синтезе

Chemical reactions and mechanisms of structure formation in the high-temperature synthesis (SHS) of titanium disilicide are considered. It has been established that the course of exothermic reaction of the silicon-titanium system is determined by the process initiation temperature, the initial nanoscale of powder particles and titanium-to-silicon mass ratio.На основании анализа термодинамических параметров основных реакций в системе кремний-титан при самораспространяющемся высокотемпературном синтезе (СВС) подтверждена возможность создания наноструктурных порошков дисилицида титана (TiSi2) как полупроводника в результате самораспространяющегося высокотемпературного синтеза. Установлено, что ход экзотермических реакций в системе кремний-титан определяется инициирующей температурой процесса, исходным наномасштабом частиц порошков и массовым соотношением титана к кремнию

Features of nanoclusters formation in the deposition mode of superthin films SI(GE)

With the use of the scanning, transmission and atomic-force microscopy and Raman scattering of ranges the features of nanoclusters formation of Si, Ge, and solid SiGe solution the deposition mode of superthin films Si(Ge) are studied. The leading mechanism in the process of films crystallization with silicon, germanium and silicongermanium nanostructures alloyed by Ge on all types of initial surfaces of substrates is the migration of silicon and germanium atoms on a surface of films are established. For the self-organization of SiGe nanoclusters a small shift of surface atoms of complex structures on a clean surface with the formation of bonds like Ge–Ge or Si–Si is favorable. It is caused by the fact that under the thermal treatment the atoms rejected from an ideal position in a crystal grid create additional force fields and it leads to the change of elastic properties of the whole nanocrystal

Investigation of Influence of Cleanliness of the Surface Substrate on Formation and Transformation of Silicon-Germanium Nanoclusters

Established that the degree surface perfection to be seen as an essential part of the general task of preparing a clean surface before the process of formation of SiGe nanoclusters and the suppression of their transformation from nanoscale to microsizes. A small displacement of the surface atoms of complex structures on a clean surface with the formation of bonds of Ge -Ge or Si- Si is beneficial for self-organization of nanoclusters SiGe