1,496 research outputs found
Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C
Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected
Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project
Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density
Development and operation of research-scale III-V nanowire growth reactors
III-V nanowires are useful platforms for studying the electronic and
mechanical properties of materials at the nanometer scale. However, the costs
associated with commercial nanowire growth reactors are prohibitive for most
research groups. We developed hot-wall and cold-wall metal organic vapor phase
epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the
same gas handling system. The hot-wall reactor is based on an inexpensive
quartz tube furnace and yields InAs nanowires for a narrow range of operating
conditions. Improvement of crystal quality and an increase in growth run to
growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor
with a base pressure of 2 X 10 Torr. A load-lock on the UHV reactor
prevents the growth chamber from being exposed to atmospheric conditions during
sample transfers. Nanowires grown in the cold-wall system have a low defect
density, as determined using transmission electron microscopy, and exhibit
field effect gating with mobilities approaching 16,000 cm(V.s).Comment: Related papers at http://pettagroup.princeton.ed
InAsSbBi, a direct band-gap, III-V, LWIR material
In the last several years Dr. Stringfellow's group at the University of Utah has reported success in incorporating over 3 percent Bi in InAs and 1.5 percent in InAsSb using Organometallic Vapor Phase Epitaxy (OMVPE) growth techniques. For InAs the lattice constant increase is linear with a=6.058+0.966x (InAs(1-x)Bi(x)), and a decrease in band gap energy of dEg / dx = -55meV / at a percentage Bi. Extrapolating this to the ternary minimum band gap at InAs(0.35)Sb(0.65), an addition of 1 to 2 percent Bi should drop the band gap to the 0.1 to 0.05eV range (10 to 20 microns). These alloys are direct band gap semiconductors making them candidates for far IR detectors. The current status of the InAsSbBi alloys is that good crystal morphology and x ray diffraction data has been obtained for up to 3.4 percent Bi. The Bi is metastable at these concentrations but the OMVPE grown material has been able to withstand the 400 C growth temperature for several hours without phase separation
Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons
Topological insulators are a new class of materials that support
topologically protected electronic surface states. Potential applications of
the surface states in low dissipation electronic devices have motivated efforts
to create nanoscale samples with large surface-to-volume ratios and highly
controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction,
which masks the transport properties of the surface states. We have therefore
developed a new route for the synthesis of topological insulator nanostructures
using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control
of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary
the Se/Bi flux ratio, growth time, and substrate temperature, and observe
morphological changes which indicate a growth regime in which nanoribbon
formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3
nanostructures occurs via a distinct growth mechanism that is nucleated by gold
nanoparticles at the base of the nanowire. By tuning the reaction conditions,
we obtain either single-crystalline ribbons up to 10 microns long or thin
micron-sized platelets.Comment: Related papers at http://pettagroup.princeton.ed
Correcting for Distortions due to Ionization in the STAR TPC
Physics goals of the STAR Experiment at RHIC in recent (and future) years
drive the need to operate the STAR TPC at ever higher luminosities, leading to
increased ionization levels in the TPC gas. The resulting ionic space charge
introduces field distortions in the detector which impact tracking performance.
Further complications arise from ionic charge leakage into the main TPC volume
from the high gain anode region. STAR has implemented corrections for these
distortions based on measures of luminosity, which we present here.
Additionally, we highlight a novel approach to applying the corrections on an
event-by-event basis applicable in conditions of rapidly varying ionization
sources.Comment: 6 pages, 7 figures, proceedings of the Workshop on Tracking in High
Multiplicity Environments (TIME 05) in Zurich, Switzerland, submitted to
Nucl. Instr. and Meth.
V1647 Ori (IRAS 05436-0007) in Outburst: the First Three Months
We report on photometric (BVRIJHK) and low dispersion spectroscopic
observations of V1647 Ori, the star that drives McNeil's Nebula, between 10
February and 7 May 2004. The star is photometrically variable atop a general
decline in brightness of about 0.3-0.4 magnitudes during these 87 days. The
spectra are featureless, aside from H-alpha and the Ca II infrared triplet in
emission, and a Na I D absorption feature. The Ca II triplet line ratios are
typical of young stellar objects. The H-alpha equivalent width may be modulated
on a period of about 60 days. The post-outburst extinction appears to be less
than 7 mag. The data are suggestive of an FU Orionis-like event, but further
monitoring will be needed to definitively characterize the outburst.Comment: Accepted for publication in the Astronomical Journa
Phases in Strongly Coupled Electronic Bilayer Liquids
The strongly correlated liquid state of a bilayer of charged particles has
been studied via the HNC calculation of the two-body functions. We report the
first time emergence of a series of structural phases, identified through the
behavior of the two-body functions.Comment: 5 pages, RevTEX 3.0, 4 ps figures; Submitted to Phys. Rev. Let
Effects of anharmonic strain on phase stability of epitaxial films and superlattices: applications to noble metals
Epitaxial strain energies of epitaxial films and bulk superlattices are
studied via first-principles total energy calculations using the local-density
approximation. Anharmonic effects due to large lattice mismatch, beyond the
reach of the harmonic elasticity theory, are found to be very important in
Cu/Au (lattice mismatch 12%), Cu/Ag (12%) and Ni/Au (15%). We find that
is the elastically soft direction for biaxial expansion of Cu and Ni, but it is
for large biaxial compression of Cu, Ag, and Au. The stability of
superlattices is discussed in terms of the coherency strain and interfacial
energies. We find that in phase-separating systems such as Cu-Ag the
superlattice formation energies decrease with superlattice period, and the
interfacial energy is positive. Superlattices are formed easiest on (001) and
hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the
formation energy of superlattices increases with period, and interfacial
energies are negative. These superlattices are formed easiest on (001) or (110)
and hardest on (111) substrates. For Ni-Au we find a hybrid behavior:
superlattices along and like in phase-separating systems, while for
they behave like in ordering systems. Finally, recent experimental
results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys,
immiscible in the bulk form, are explained in terms of destabilization of the
phase separated state due to lattice mismatch between the substrate and
constituents.Comment: RevTeX galley format, 16 pages, includes 9 EPS figures, to appear in
Physical Review
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