[Bis­(4-methyl-1,3-thia­zol-2-yl-κN)methane]­tricarbonyl­dichlorido­tungsten(II)

The title compound, [WCl2(C9H10N2S2)(CO)3], is a hepta­coordinate tungsten(II) complex with a capped–octa­hedral coordination sphere in which one CO ligand caps a face formed by a chloro ligand and the two other carbonyls. The chloro ligands are mutually trans positioned at an angle of 156.98 (7)°. The chelating bis­(4-methyl-1,3-thia­zol-2-yl)methane ligand coordinates with the imine N atoms. In the crystal, mol­ecules are linked into chains parallel to [201] by weak C—H⋯O contacts between the CH2 group of the bis­(4-methyl­thia­zol-2-yl)methane ligand and the O atom of the capping CO group

(m-Phenyl­enedimethyl­ene)bis­(triphenyl­phospho­nium) bis­[chlorido(penta­fluoro­phen­yl)aurate(I)] dichloro­methane disolvate

The title compound, (C44H38P2)[AuCl(C6F5)]2·2CH2Cl2, crystallizes with a twofold rotation axis through the central benzene ring in the bis-phospho­nium dication. In the crystal, the dications and anions are ordered into columns running parallel to the c axis by contacts of the pro-ylidic CH2 groups with the Cl atom of one and an ortho-F atom of another anion. The space between the columns is occupied by CH2Cl2 solvent mol­ecules

[(3-Methylphenyl)(triphenylphosphonio)methanide-κC]triphenyl­phospho­rane}(penta­fluoro­phenyl-κC)gold(I) diethyl ether solvate

The metal atom in the title ylid–gold(I) adduct, [Au(C6F5)(C26H23P)]·C4H10O, exists in a linear coordination environment [C—Au—C = 174.1 (2)°]. The mol­ecule has a short intra­molecular contact involving an aromatic H atom (Au⋯H = 2.64 Å); two adjacent mol­ecules are linked by an Au⋯Hylid inter­action (Au⋯H = 3.14 Å)

Bis[μ-1,2-bis­(diphenyl­phosphino)ethane-κ2 P:P′]digold(I)(Au—Au) bis­(trifluoro­methane­sulfonate) acetonitrile disolvate

The title compound, [Au2(C26H24P2)2](CF3SO3)2·2CH3CN, comprises a cyclic cation with a short intra­molecular aurophilic inter­action of 2.9220 (3) Å. The trifluoro­methane­sulfonate anions and acetonitrile solvent mol­ecules are located in channels formed by the complex cations that run along the crystallographic c axis. Each counter-anion is also engaged in a C—H⋯O contact with one of the methyl­ene H atoms of a 1,2-bis­(diphenyl­phosphino)ethane (dppe) ligand; another C—H⋯O contact involving an aromatic H atom is also observed

4-Bromo-N-(diisopropoxyphosphor­yl)benzamide

In the title compound, C13H19BrNO4P, the crystal structure is stabilized by inter­molecular N—H⋯O hydrogen bonds between the phosphoryl O atom and the amide N atom which link the mol­ecules into centrosymmetric dimers. These dimers are further packed into stacks along the c axis by inter­molecular C—H⋯O and C—H⋯π inter­actions

(Acetonitrile-κN)penta­carbonyl­tungsten(0)

The acetonitrile ligand in the title compound, [W(CH3CN)(CO)5], is coordinated end-on to a penta­carbonyl­tungsten(0) fragment with a W—N bond length of 2.186 (4) Å, completing an octa­hedral coordination environment around the W atom

Bis(1,3-benzothia­zol-2-amine-κN 3)silver(I) nitrate acetone solvate

In the title compound, [Ag(C7H6N2S)2]NO3·C3H6O, the AgI ion is coordinated to two benzothia­zol-2-amine ligands via the thia­zole N atoms in an approximately linear arrangement. The dihedral angle between the mean planes of the two 1,3-benzothia­zole groups is 5.9 (3)°. Both amine groups on the ligands are oriented in the same direction and are engaged in N—H⋯O hydrogen bonding with the nitrate counter-anion, forming one-dimensional columns along the b-axis direction. Voids created by inefficient crystal packing are occupied by acetone solvent mol­ecules which are disordered over two sites with occupancies of 0.563 (11) and 0.437 (11)

Breathing Current Domains in Globally Coupled Electrochemical Systems: A Comparison with a Semiconductor Model

Spatio-temporal bifurcations and complex dynamics in globally coupled intrinsically bistable electrochemical systems with an S-shaped current-voltage characteristic under galvanostatic control are studied theoretically on a one-dimensional domain. The results are compared with the dynamics and the bifurcation scenarios occurring in a closely related model which describes pattern formation in semiconductors. Under galvanostatic control both systems are unstable with respect to the formation of stationary large amplitude current domains. The current domains as well as the homogeneous steady state exhibit oscillatory instabilities for slow dynamics of the potential drop across the double layer, or across the semiconductor device, respectively. The interplay of the different instabilities leads to complex spatio-temporal behavior. We find breathing current domains and chaotic spatio-temporal dynamics in the electrochemical system. Comparing these findings with the results obtained earlier for the semiconductor system, we outline bifurcation scenarios leading to complex dynamics in globally coupled bistable systems with subcritical spatial bifurcations.Comment: 13 pages, 11 figures, 70 references, RevTex4 accepted by PRE http://pre.aps.or