Subcellular localization of the nonstructural protein NS3 of African horsesickness virus

The subcellular localization of the minor nonstructural protein NS3 of African horsesickness virus (AHSV) has been investigated by means of immunogold electron-microscopical analysis. NS3 was observed in perturbed regions of the plasma membrane of AHSV-infected VERO cells, and its presence appears to be associated with events of viral release. These events are budding, whereby released viruses acquire fragments from the host-cell membrane, as well as by the extrusion of nonenveloped particles through the cell membrane. The membrane association of NS3 was confirmed by its detection in the disrupted plasma membranes of cells infected with an NS3 baculovirus recombinant. The absence of NS3 on intact cell membranes suggests that the protein is not exposed extracellularly.The articles have been scanned in colour with a HP Scanjet 5590; 600dpi. Adobe Acrobat X Pro was used to OCR the text and also for the merging and conversion to the final presentation PDF-format.mn201

The ReactorSTM: Atomically resolved scanning tunneling microscopy under high-pressure, high-temperature catalytic reaction conditions

Quantum Matter and Optic

Numerical simulation of the generation of secondary electrons in the High Current Experiment

Electron effects in the High Current Experiment (HCX) are studied via computer simulation. An approximate expression for the secondary electron yield for a potassium ion striking stainless steel is derived and compared with experimental results. This approximate expression has a peak of roughly 55 electrons at normal incidence at an ion energy of 60 MeV. Using an empirical angular dependence, the secondary electron yield is combined with a numerical simulation of the HCX ion beam dynamics to obtain an estimate for the number of secondary electrons expected per ion-wall collision in the HCX. This estimate is that approximately 150-200 electrons per ion collision may result in the HCX

Stray-electron accumulation and effects in HIF accelerators

Stray electrons can be introduced in positive-charge accelerators for heavy ion fusion (or other applications) as a result of ionization of ambient gas or gas released from walls due to halo-ion impact, or as a result of secondary-electron emission. Electron accumulation is impacted by the ion beam potential, accelerating fields, multipole magnetic fields used for beam focus, and the pulse duration. We highlight the distinguishing features of heavy-ion accelerators as they relate to stray-electron issues, and present first results from a sequence of simulations to characterize the electron cloud that follows from realistic ion distributions. Also, we present ion simulations with prescribed random electron distributions, under taken to begin to quantify the effects of electrons on ion beam quality

Stray-electron accumulation and effects in HIF accelerators

Stray electrons can be introduced in positive-charge accelerators for heavy ion fusion (or other applications) as a result of ionization of ambient gas or gas released from walls due to halo-ion impact, or as a result of secondary-electron emission. Electron accumulation is impacted by the ion beam potential, accelerating fields, multipole magnetic fields used for beam focus, and the pulse duration. We highlight the distinguishing features of heavy-ion accelerators as they relate to stray-electron issues, and present first results from a sequence of simulations to characterize the electron cloud that follows from realistic ion distributions. Also, we present ion simulations with prescribed random electron distributions, under taken to begin to quantify the effects of electrons on ion beam quality