47 research outputs found
Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si
Get PDFElectron microscopy study on the influence of B-implantation on Ni induced lateral crystallization in amorphous Si
Get PDFNickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of the Ni-MILC process. The structural characteristics of the implanted by Boron and subsequently crystallized by MILC a-Si films are studied by Transmission Electron Microscopy (TEM) and they are compared to intrinsic a-Si films which were deposited on top, as well as beside the boron implanted a-Si film. During the annealing, spontaneous nucleation occurs in the B-doped films far from the a-c interface, revealing a shorter incubation period in the B-doped films
Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO 2
Full text linkRaman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures
Full text linkStructural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si
Full text linkInvestigation of the influence of a dislocation loop layer on interstitial kinetics during surface oxidation of silicon
No full textElectrical and structural characterization of wafer bonded non-annealed Simox
No full textThe formation of a BESOI structures where the silicon overlayer originates from non-annealed SIMOX is described. The method is applied for the first time and it's intention is to provide an accurate way to control the thickness of the Si-film. The structural characteristics of the Si-overlayer and the electrical characteristics of the bonded interface are presented. © 1995
Study of the growth kinetics of oxidation-induced stacking faults in separation by implanted oxygen structures using a new chemical etching process
No full textCharacterisation of oxidation-induced stacking faults in SOI structures by a new chemical etching process
No full text
