771 research outputs found

    Recovery For The Wrongful Death of a Viable Fetus: Werling v. Sandy

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    In Werling v. Sandy, the Ohio Supreme Court held a viable fetus, negligently injured en ventre sa mere and subsequently stillborn, may be the basis for a wrongful death action pursuant to Ohio Rev. Code § 2125.01.1 The court\u27s ruling represented Ohio\u27s explicit acceptance of the trend allowing a wrongful death action for the death of a fetus. Although Werling was not a case of first impression in Ohio, it presented the Ohio Supreme Court with the first opportunity to expand the legal rights of the unborn

    Spin dynamics in high-mobility two-dimensional electron systems

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    Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane magnetic field and thus reduces the spin-flip rate. By time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin lifetime is increased by an order of magnitude as the initial spin polarization degree is raised from the low-polarization limit to several percent. We perform control experiments to decouple the excitation density in the sample from the spin polarization degree and investigate the interplay of the internal HF field and an external perpendicular magnetic field. The lifetime of spins oriented in the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and Dresselhaus spin-orbit fields are of the same order of magnitude. This anisotropy, which stems from the interference of the Rashba and the Dresselhaus spin-orbit fields, is highly density-dependent: as the electron density is increased, the kubic Dresselhaus term becomes dominant and reduces the anisotropy.Comment: 13 pages, 6 figure

    Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system

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    We have investigated the spin dynamics of a high-mobility two-dimensional electron system (2DES) in a GaAs--Al0.3_{0.3}Ga0.7_{0.7}As single quantum well by time-resolved Faraday rotation (TRFR) in dependence on the initial degree of spin polarization, PP, of the 2DES. From P∼0P\sim 0 to P∼30P\sim 30 %, we observe an increase of the spin dephasing time, T2∗T_2^\ast, by an order of magnitude, from about 20 ps to 200 ps, in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Furthermore, by applying an external magnetic field in the Voigt configuration, also the electron gg factor is found to decrease for increasing PP. Fully microscopic calculations, by numerically solving the kinetic spin Bloch equations considering the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, reproduce the most salient features of the experiments, {\em i.e}., a dramatic decrease of spin dephasing and a moderate decrease of the electron gg factor with increasing PP. We show that both results are determined dominantly by the Hartree-Fock contribution of the Coulomb interaction.Comment: 4 pages, 4 figures, to be published in PR

    Acceleration Schemes for Ab-Initio Molecular Dynamics and Electronic Structure Calculations

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    We study the convergence and the stability of fictitious dynamical methods for electrons. First, we show that a particular damped second-order dynamics has a much faster rate of convergence to the ground-state than first-order steepest descent algorithms while retaining their numerical cost per time step. Our damped dynamics has efficiency comparable to that of conjugate gradient methods in typical electronic minimization problems. Then, we analyse the factors that limit the size of the integration time step in approaches based on plane-wave expansions. The maximum allowed time step is dictated by the highest frequency components of the fictitious electronic dynamics. These can result either from the large wavevector components of the kinetic energy or from the small wavevector components of the Coulomb potential giving rise to the so called {\it charge sloshing} problem. We show how to eliminate large wavevector instabilities by adopting a preconditioning scheme that is implemented here for the first-time in the context of Car-Parrinello ab-initio molecular dynamics simulations of the ionic motion. We also show how to solve the charge-sloshing problem when this is present. We substantiate our theoretical analysis with numerical tests on a number of different silicon and carbon systems having both insulating and metallic character.Comment: RevTex, 9 figures available upon request, to appear in Phys. Rev.

    Dynamic Structure Factor of Liquid and Amorphous Ge From Ab Initio Simulations

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    We calculate the dynamic structure factor S(k,omega) of liquid Ge (l-Ge) at temperature T = 1250 K, and of amorphous Ge (a-Ge) at T = 300 K, using ab initio molecular dynamics. The electronic energy is computed using density-functional theory, primarily in the generalized gradient approximation, together with a plane wave representation of the wave functions and ultra-soft pseudopotentials. We use a 64-atom cell with periodic boundary conditions, and calculate averages over runs of up to 16 ps. The calculated liquid S(k,omega) agrees qualitatively with that obtained by Hosokawa et al, using inelastic X-ray scattering. In a-Ge, we find that the calculated S(k,omega) is in qualitative agreement with that obtained experimentally by Maley et al. Our results suggest that the ab initio approach is sufficient to allow approximate calculations of S(k,omega) in both liquid and amorphous materials.Comment: 31 pages and 8 figures. Accepted for Phys. Rev.

    Atomic layering at the liquid silicon surface: a first- principles simulation

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    We simulate the liquid silicon surface with first-principles molecular dynamics in a slab geometry. We find that the atom-density profile presents a pronounced layering, similar to those observed in low-temperature liquid metals like Ga and Hg. The depth-dependent pair correlation function shows that the effect originates from directional bonding of Si atoms at the surface, and propagates into the bulk. The layering has no major effects in the electronic and dynamical properties of the system, that are very similar to those of bulk liquid Si. To our knowledge, this is the first study of a liquid surface by first-principles molecular dynamics.Comment: 4 pages, 4 figures, submitted to PR

    Generation of finite wave trains in excitable media

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    Spatiotemporal control of excitable media is of paramount importance in the development of new applications, ranging from biology to physics. To this end we identify and describe a qualitative property of excitable media that enables us to generate a sequence of traveling pulses of any desired length, using a one-time initial stimulus. The wave trains are produced by a transient pacemaker generated by a one-time suitably tailored spatially localized finite amplitude stimulus, and belong to a family of fast pulse trains. A second family, of slow pulse trains, is also present. The latter are created through a clumping instability of a traveling wave state (in an excitable regime) and are inaccessible to single localized stimuli of the type we use. The results indicate that the presence of a large multiplicity of stable, accessible, multi-pulse states is a general property of simple models of excitable media.Comment: 6 pages, 6 figure

    Bosons in anisotropic traps: ground state and vortices

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    We solve the Gross-Pitaevskii equations for a dilute atomic gas in a magnetic trap, modeled by an anisotropic harmonic potential. We evaluate the wave function and the energy of the Bose Einstein condensate as a function of the particle number, both for positive and negative scattering length. The results for the transverse and vertical size of the cloud of atoms, as well as for the kinetic and potential energy per particle, are compared with the predictions of approximated models. We also compare the aspect ratio of the velocity distribution with first experimental estimates available for 87^{87}Rb. Vortex states are considered and the critical angular velocity for production of vortices is calculated. We show that the presence of vortices significantly increases the stability of the condensate in the case of attractive interactions.Comment: 22 pages, REVTEX, 8 figures available upon request or at http://anubis.science.unitn.it/~dalfovo/papers/papers.htm

    Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a [001][001] GaAs/AlGaAs quantum well

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    In time-resolved Faraday rotation experiments we have detected an inplane anisotropy of the electron spin-dephasing time (SDT) in an nn--modulation-doped GaAs/Al0.3_{0.3}Ga0.7_{0.7}As single quantum well. The SDT was measured with magnetic fields of B≤1B\le 1 T, applied in the [110][110] and [11ˉ0][1\bar{1}0] inplane crystal directions of the GaAs quantum well. For fields along [11ˉ0][1\bar{1}0], we have found an up to a factor of about 2 larger SDT than in the perpendicular direction. Fully microscopic calculations, by numerically solving the kinetic spin Bloch equations considering the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, reproduce the experimental findings quantitatively. This quantitative analysis of the data allowed us to determine the relative strengths of Rashba and Dresselhaus terms in our sample. Moreover, we could estimate the SDT for spins aligned in the [110][110] {\em inplane} direction to be on the order of several nanoseconds, which is up to two orders of magnitude larger than that in the perpendicular {\em inplane} direction.Comment: 4 pages, 4 figures, to be published in PR

    Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

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    We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, T2∗T_2^\ast, increases from about 20 ps to 200 ps; Moreover, T2∗T_2^\ast increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with {\em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing PP and the temperature dependences at different spin polarizations.Comment: 8 pages, 8 figures, to be published in PR
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