Characteristics of GaInNAsSb VCSELs operating near 1.55µm

A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical pumping via low reflectivities at 808nm and 1064nm while providing very high reflectivity at the 1.55μm target emission wavelength. The laser characteristics were evaluated using both a Q-switched Nd:YAG 1064nm pump and a 20W-peak 180ns-pulsed 850nm diode laser. The importance of the gain-cavity detuning was evident from time-dependent spectral measurements of laser material subjected to post-growth annealing at different temperatures between 725 and 775°C. The highest annealing temperature produces the largest blue shift of the gain peak relative to the cavity resonance, resulting in the best power transfer characteristics as well as reduced temperature sensitivity

Optical trapping with "on-demand" two-photon luminescence using Cr:LiSAF laser with optically addressed saturable Bragg reflector

We demonstrate a diode-pumped Cr:LiSAF laser with controllable and reliable fast switching between its continuous-wave and mode-locked states of operation using an optically-addressed semiconductor Bragg reflector, permitting dyed microspheres to be continuously trapped and monitored using a standard microscope imaging and on-demand two-photon-excited luminescence techniques

GaN directional couplers for integrated quantum photonics

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip with 96% visibility.Comment: 4 pages, 5 figure

High frequency operation of an integrated electro-absorption modulator onto a vertical-cavity surface-emitting laser

We present in this paper the vertical integration of an electro-absorption modulator (EAM) onto a vertical-cavity surface-emitting laser (VCSEL). We discuss the design, fabrication, and measured characteristics of the combined VCSEL and EAM. We previously demonstrated a standalone EAM with an optical bandwidth around 30 GHz. In this paper we present for the first time an optical bandwidth of 30 GHz for an EAM integrated onto a VCSEL. This device exhibits single-mode operation and a very low chirp, below 0.1 nm, even with a modulation depth of 70% which makes this device very competitive for high-speed communications in data centers

Vertical cavity semiconductor optical amplifiers based on dilute nitrides

This chapter presents a comprehensive report on our work on dilute nitride vertical cavity semiconductor optical amplifiers. It includes a presentation of a theoretical analysis of the components and a summary of the experimental assessment of monolithic and fibre-based tunable devices operated in the continuous-wave regime. In particular, it is shown how some material parameters can be extracted from this device continuous-wave characterization or from gain-dynamics experiments. Current investigations on the extension of the operation towards the 1,550nm telecommunication band conclude this review

Semiconductor disk lasers (VECSELs)

A chapter on semiconductor disk lasers (VECSELs

Slow-light in a vertical-cavity semiconductor optical amplifier

This paper discusses the effect of slow-light in Vertical-Cavity Semiconductor Optical Amplifiers. A Fabry-Perot model is used to predict the group delay (GD) and GD-bandwidth performance of a VCSOA operated in reflection in the linear regime. It is shown that the GD depends on all cavity parameters while the GDxGD-bandwidth product only depends on the gain. Experimental demonstration with a 1300nm GaInNAs VCSOA is used to validate the model and demonstrate tunable GDs between 25 and 100 ps by varying the VCSOA gain. Experimental distortion of the signals induced by nonlinear effects is also presented

Diamond raman waveguide lasers : completely analytical design optimization incorporating scattering losses

We report detailed investigation of diamond-onsilica waveguides and their potential for use as Raman lasers. Large cross-sectional area rib waveguides are proposed as a dimension-scalable geometry. Finite element analysis and the beam propagation method are used to assess their guiding properties and in particular single transverse mode operation. A fully analytical model of scattering losses taking into account the interaction with all surfaces is proposed and exploited in conjunction with an analytical solution of a Raman waveguide laser to optimize the design with respect to threshold or output power of a diamond Raman waveguide laser pumped continuous-wave either at 532 nm or 1064 nm. Results show that thresholds lower than 500 mW and near quantum limit output powers can be obtained for a range of guide dimensions

InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode