Nucleation of small silicon carbide dust clusters in AGB stars

Silicon carbide (SiC) grains are a major dust component in carbon-rich AGB stars. The formation pathways of these grains are, however, not fully understood.\ We calculate ground states and energetically low-lying structures of (SiC)$_n$, $n=1,16$ clusters by means of simulated annealing (SA) and Monte Carlo simulations of seed structures and subsequent quantum-mechanical calculations on the density functional level of theory. We derive the infrared (IR) spectra of these clusters and compare the IR signatures to observational and laboratory data.\ According to energetic considerations, we evaluate the viability of SiC cluster growth at several densities and temperatures, characterising various locations and evolutionary states in circumstellar envelopes.\ We discover new, energetically low-lying structures for Si$_{4}$C$_{4}$, Si$_{5}$C$_{5}$, Si$_{15}$C$_{15}$ and Si$_{16}$C$_{16}$, and new ground states for Si$_{10}$C$_{10}$ and Si$_{15}$C$_{15}$. The clusters with carbon-segregated substructures tend to be more stable by 4-9 eV than their bulk-like isomers with alternating Si-C bonds. However, we find ground states with cage ("bucky"-like) geometries for Si$_{12}$C$_{12}$ and Si$_{16}$C$_{16}$ and low-lying, stable cage structures for n $\ge$ 12. The latter findings indicate thus a regime of clusters sizes that differs from small clusters as well as from large-scale crystals. Thus, and owing to their stability and geometry, the latter clusters may mark a transition from a quantum-confined cluster regime to crystalline, solid bulk-material. The calculated vibrational IR spectra of the ground-state SiC clusters shows significant emission. They include the 10-13 $\mu$m wavelength range and the 11.3 $\mu$m feature inferred from laboratory measurements and observations, respectively, though the overall intensities are rather low.Comment: 16 pages, 25 figures, 3 tables, accepted for publication in Ap

Oxygen Vacancies in Oxide Nanoclusters: When Silica Is More Reducible Than Titania

Oxygen vacancies are related to specific optical, conductivity and magnetic properties in macroscopic SiO2 and TiO2 compounds. As such, the ease with which oxygen vacancies form often determines the application potential of these materials in many technological fields. However, little is known about the role of oxygen vacancies in nanosized materials. In this work we compute the energies to create oxygen vacancies in highly stable nanoclusters of (TiO2)N, (SiO2)N, and mixed (TixSi1−xO2)N for sizes between N = 2 and N = 24 units. Contrary to the results for bulk and surfaces, we predict that removing an oxygen atom from global minima silica clusters is energetically more favorable than from the respective titania species. This unexpected chemical behavior is clearly linked to the inherent presence of terminal unsaturated oxygens at these nanoscale systems. In order to fully characterize our findings, we provide an extensive set of descriptors (oxygen vacancy formation energy, electron localization, density of states, relaxation energy, and geometry) that can be used to compare our results with those for other compositions and sizes. Our results will help in the search of novel nanomaterials for technological and scientific applications such as heterogeneous catalysis, electronics, and cluster chemistry

Tuning crystal ordering, electronic structure, and morphology in organic semiconductors: Tetrathiafulvalenes as a model case

Tetrathiafulvalenes (TTFs) are an appealing class of organic small molecules giving rise to some of the highest performing active materials reported for organic field effect transistors (OFETs). Because they can be easily chemically modified, TTF-derivatives are ideal candidates to perform molecule-property correlation studies and, especially, to elucidate the impact of molecular and crystal engineering on device performance. A brief introduction into the state-of-the-art of the field-effect mobility values achieved with TTF derivatives employing different fabrication techniques is provided. Following, structure-performance relationships are discussed, including polymorphism, a phenomenon which is crucial to control for ensuring device reproducibility. It is also shown that chemical modification of TTFs has a strong influence on the electronic structure of these materials, affecting their stability as well as the nature of the generated charge carriers, leading to devices with p-channel, n-channel, or even ambipolar behaviour. TTFs have also shown promise in other applications, such as phototransistors, sensors, or as dopants or components of organic metal charge transfer salts used as source-drain contacts. Overall, TTFs are appealing building blocks in organic electronics, not only because they can be tailored to perform fundamental studies, but also because they offer a wide spectrum of potential applications. Tetrathiafulvalenes are promising active materials in organic field-effect transistors (OFETs), in which they exhibit high performances. An overview is provided of the use of this family of materials as a model building block for OFETs to highlight general concepts of organic semiconductors and their use in devices.The authors thank the ERC StG 2012-306826 e-GAMES project, the Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), the DGI (Spain) with projects BE-WELL CTQ2013-40480-R and MAT2012-30924, and the Generalitat de Catalunya (2014-SGR-17, 2014SGR97 and XRQTC).Peer Reviewe

A global optimisation study of the low-lying isomers of the alumina octomer (Al2O3)8

We employ the Monte-Carlo Basin-Hopping (MC-BH) global optimisation technique with inter- atomic pair potentials to generate low-energy candidates of stoichiometric alumina octomers ((Al2O3)8). The candidate structures are subsequently refined with density functional theory calculations employing hybrid functionals (B3LYP and PBE0) and a large basis set (6-311+G(d)) including a vibrational analysis. We report the discovery of a set of energetically low-lying alumina octomer clusters, including a new global minimum candidate, with shapes that are elongated rather than spherical. We find a stability limit for these and smaller-sized clusters at a temperature of T ≃ 1300 - 1450 K corresponding to a phase transition in liquid alumina

Controlling pairing of π-conjugated electrons in 2D covalent organic radical frameworks via in-plane strain

Controlling the electronic states of molecules is a fundamental challenge for future sub-nanoscale device technologies. -conjugated bi-radicals are very attractive systems in this respect as they possess two energetically close, but optically and magnetically distinct, electronic states: the open-shell antiferromagnetic/paramagnetic and the closed-shell quinoidal diamagnetic states. While it has been shown that it is possible to statically induce one electronic ground state or the other by chemical design, the external dynamical control of these states in a rapid and reproducible manner still awaits experimental realization. Here, via quantum chemical calculations, we demonstrate that in-plane uniaxial strain of 2D covalently linked arrays of radical units leads to smooth and reversible conformational changes at the molecular scale that, in turn, induce robust transitions between the two kinds of electronic distributions. Our results pave a general route towards the external control, and thus technological exploitation, of molecular-scale electronic states in organic 2D materials. Controlling the electronic states of molecules is a fundamental challenge for future sub-nanoscale device technologies but the external dynamical control of these states still awaits experimental realization. Here, via quantum chemical calculations, the authors demonstrate that in-plane uniaxial strain of 2D covalently linked arrays of radical units induces controlled pairing of pi -conjugated electrons in a reversible way