Intrinsic Optical and Electronic Properties from Quantitative Analysis of Plasmonic Semiconductor Nanocrystal Ensemble Optical Extinction

The optical extinction spectra arising from localized surface plasmon resonance in doped semiconductor nanocrystals (NCs) have intensities and lineshapes determined by free charge carrier concentrations and the various mechanisms for damping the oscillation of those free carriers. However, these intrinsic properties are convoluted by heterogeneous broadening when measuring spectra of ensembles. We reveal that the traditional Drude approximation is not equipped to fit spectra from a heterogeneous ensemble of doped semiconductor NCs and produces fit results that violate Mie scattering theory. The heterogeneous ensemble Drude approximation (HEDA) model rectifies this issue by accounting for ensemble heterogeneity and near-surface depletion. The HEDA model is applied to tin-doped indium oxide NCs for a range of sizes and doping levels but we expect it can be employed for any isotropic plasmonic particles in the quasistatic regime. It captures individual NC optical properties and their contributions to the ensemble spectra thereby enabling the analysis of intrinsic NC properties from an ensemble measurement. Quality factors for the average NC in each ensemble are quantified and found to be notably higher than those of the ensemble. Carrier mobility and conductivity derived from HEDA fits matches that measured in the bulk thin film literature

Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity

Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data shows electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and, in agreement with variable temperature conductivity fits, find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films

Contact conductance governs metallicity in conducting metal oxide nanocrystal films

Although colloidal nanoparticles hold promise for fabricating electronic components, the properties of nanoparticle-derived materials can be unpredictable. Materials made from metallic nanocrystals exhibit a variety of transport behavior ranging from insulators, with inter- nanocrystal contacts acting as electron transport bottlenecks, to conventional metals, where phonon scattering limits electron mobility. The insulator-metal transition (IMT) in nanocrystal films is thought to be determined by contact conductance. Meanwhile, criteria are lacking to predict the characteristic transport behavior of metallic nanocrystal films beyond this threshold. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we assess the IMT as it depends on contact conductance and show how contact conductance is also key to predicting the temperature- dependence of conductivity in metallic films. The results establish a phase diagram for electron transport behavior that can guide the creation of metallic conducting materials from nanocrystal building blocks.Funding was provided by the National Science Foundation (NSF) through the Center for Dynamics and Control of Materials: an NSF MRSEC grant DMR- 1720595 (XYG), NSF grant CHE-1905263 (SLG), NASCENT, an NSF ERC (EEC-1160494, CMS), an NSF Graduate Research Fellowship (DGE-1610403 and 2137420, JTB), and a Welch Foundation grant (F-1848, GKO).Center for Dynamics and Control of Material

High Mobility in Nanocrystal-Based Transparent Conducting Oxide Thin Films

Charge carrier mobility in transparent conducting oxide (TCO) films is mainly limited by impurity scattering, grain boundary scattering, and a hopping transport mechanism. We enhanced the mobility in nanocrystal (NC)-based TCO films, exceeding even typical values found in sputtered thin films, by addressing each of these scattering factors. Impurity scattering is diminished by incorporating cerium as a dopant in indium oxide NCs instead of the more typical dopant, tin. Grain boundary scattering is reduced by using large NCs with a size of 21 nm, which nonetheless were sufficiently small to avoid haze due to light scattering. In-filling of the precursor solution followed by annealing results in a NC-based composite film which conducts electrons through metal-like transport at room temperature, readily distinguished by the positive temperature coefficient of resistance. Cerium-doped indium oxide (Ce:In₂O₃) NC-based composite films achieve a high mobility of 56.0 cm²/V·s, and a low resistivity of 1.25 × 10^–3 Ω·cm. The films are transparent to a broad range of visible and near-infrared light from 400 nm to at least 2500 nm wavelength. On the basis of the high conductivity and high transparency of the Ce:In₂O₃ NC-based composite films, the films are successfully applied as transparent electrodes within an electrochromic device