Selective spin transport through a quantum heterostructure: Transfer matrix method

In the present work we propose that a one-dimensional quantum heterostructure composed of magnetic and non-magnetic atomic sites can be utilized as a spin filter for a wide range of applied bias voltage. A simple tight-binding framework is given to describe the conducting junction where the heterostructure is coupled to two semi-infinite one-dimensional non-magnetic electrodes. Based on transfer matrix method all the calculations are performed numerically which describe two-terminal spin dependent transmission probability along with junction current through the wire. Our detailed analysis may provide fundamental aspects of selective spin transport phenomena in one-dimensional heterostructures at nano-scale level.Comment: 12 pages, 15 figures (Accepted for Publication in: International Journal of Modern Physics B

Resonant Photoelectron Diffraction with circularly polarized light

Resonant angle scanned x-ray photoelectron diffraction (RXPD) allows the determination of the atomic and magnetic structure of surfaces and interfaces. For the case of magnetized nickel the resonant L2 excitation with circularly polarized light yields electrons with a dichroic signature from which the dipolar part may be retrieved. The corresponding L2MM and L3MM Auger electrons carry different angular momenta since their source waves rotate the dichroic dipole in the electron emission patterns by distinct angles

Intercalation of graphene on SiC(0001) via ion-implantation

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips

Observation of Spin-glass-like Behavior in SrRuO3 Epitaxial Thin Films

We report the observation of spin-glass-like behavior and strong magnetic anisotropy in extremely smooth (~1-3 \AA) roughness) epitaxial (110) and (010) SrRuO3 thin films. The easy axis of magnetization is always perpendicular to the plane of the film (unidirectional) irrespective of crystallographic orientation. An attempt has been made to understand the nature and origin of spin-glass behavior, which fits well with Heisenberg model.Comment: 5 pages, 5 Figure

On rationality of the intersection points of a line with a plane quartic

We study the rationality of the intersection points of certain lines and smooth plane quartics C defined over F_q. For q \geq 127, we prove the existence of a line such that the intersection points with C are all rational. Using another approach, we further prove the existence of a tangent line with the same property as soon as the characteristic of F_q is different from 2 and q \geq 66^2+1. Finally, we study the probability of the existence of a rational flex on C and exhibit a curious behavior when the characteristic of F_q is equal to 3.Comment: 17 pages. Theorem 2 now includes the characteristic 2 case; Conjecture 1 from the previous version is proved wron

360 degree domain wall generation in the soft layer of magnetic tunnel junctions

High spatial resolution X-ray photo-emission electron microscopy technique has been used to study the influence of the dipolar coupling taking place between the NiFe and the Co ferromagnetic electrodes of micron sized, elliptical shaped magnetic tunnel junctions. The chemical selectivity of this technique allows to observe independently the magnetic domain structure in each ferromagnetic electrode. The combination of this powerful imaging technique with micromagnetic simulations allows to evidence that a 360 degree domain wall can be stabilized in the NiFe soft layer. In this letter, we discuss the origin and the formation conditions of those 360 degree domain walls evidenced experimentally and numerically