The political history of China 1840-1928

During the past decade general readers as well as college students have given increasingly close attention to Far Eastern hhistory. For either the formal or the informal student in this the field.xii, 545 p.; 24 c

The political history of China 1840-1928

During the past decade general readers as well as college students have given increasingly close attention to Far Eastern hhistory. For either the formal or the informal student in this the field.xii, 545 p.; 24 c

The political history of China 1840-1928

During the past decade general readers as well as college students have given increasingly close attention to Far Eastern hhistory. For either the formal or the informal student in this the field.xii, 545 p.; 24 c

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor and optoelectronic devices. However, growing single-phase γ-InSe film is a challenge due to the polymorphic nature of indium selenide (γ-InSe, α-In2Se3, β-In2Se3, γ-In2Se3, etc.). In this work, the 2D α-In2Se3 film was first grown on a sapphire substrate by MBE. Then, the high In/Se ratio sources were deposited on the α-In2Se3 surface, and an γ-InSe crystal emerged via solid-phase epitaxy. After 50 min of deposition, the initially 2D α-In2Se3 phase was also transformed into a 2D γ-InSe crystal. The phase transition from 2D α-In2Se3 to γ-InSe was confirmed by Raman, XRD, and TEM analysis. The structural ordering of 2D γ-InSe film was characterized by synchrotron-based grazing-incidence wide-angle X-ray scattering (GIWAXS)