Development and scalability of a 2 Tb/s data transmission module based on a3 μm SOI silicon photonics platform

VTT's well-proven 3 μm SOI (Silicon Over Insulator) photonic integration platform is particularly suitable for passive optical functionalities such as Multiplexers, De-Multiplexers, Power Splitters, Delay Lines, Mach-Zehnder Interferometers (MZI), also for active operations such as phase tuning through Thermo-optic Switches and optical power monitoring or high-speed detection with integrated Ge Photo-Detectors (Ge-PD) etc. In combination with integrated up-reflecting mirrors and solder coated cavities it's enabling heterogeneous integration of III-V active devices; both Wafer Level Packaging (WLP) and E/O Wafer Level Tests can be fully exploited, scaling up in volume manufacturing while dramatically reducing assembly costs. Here heterogeneous integration of 40 Vertical Cavity Surface Emitting Lasers (VCSELs) and a SOI 40:1 multiplexer Photonic Integrated Circuit (PIC) is exploited with flip-chip techniques, coupling VCSEL emitting spots on top of respective up-reflective mirrors. VCSELs can be directly modulated up to 50 Gb/s reaching a 2 T/ls full transmission capacity. Additional 40 linear VCSEL drivers are flip-chip bonded onto a suitable Land Grid Array (LGA) interposer designed to provide interconnection and thermal decoupling capabilities to the Si-PIC, realizing a very compact, thermally efficient packaging solution. The exit waveguide from the PIC is also terminated with an up-reflective mirror and furthermore coupled with a 90 deg. tilting fiber optic pigtail designed to minimize the form-factor impact, improving mechanical reliability of the overall transmitter module.This work was partially supported by a project that has received funding from the European Union's Horizon 2020 research and innovation programme, under grant agreement PASSION No 780326

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, &lt;0.7dB polarization dependent loss and 6-ns switching time.</p

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, &lt;0.7dB polarization dependent loss and 6-ns switching time.</p

1×40 100 GHz spacing Low-crosstalk Mux/Demux based on Cascaded Planar Echelle Gratings on 3-μm Silicon platform

We experimentally demonstrate a photonic integrated 1×40 100GHz spaced Mux/Demux by cascading one 1×8 100GHz 3-μm silicon Planar Echelle Grating (PEG) and eight 1×5 800GHz PEGs. Experimental results show 2dB insertion loss, -35dB crosstalk and error-free operation at 10Gb/s with &lt;0.1dB power penalty.</p

C- and L-band low polarization sensitive nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform

We fabricated and assessed a wideband (C-/L- band) nanosecond 1×2 electro-optic switch in 3-μm thick silicon. Results show 2.5dB lowest insertion loss, 16dB averaged extinction ration, 2.5dB polarization dependent loss and 6-ns switching time.</p

Hybrid Integration of VCSEL and 3-μm Silicon Waveguide Based on a Monolithic Lens System

We design an optical interface system for vertical coupling between vertical-cavity surface-emitting lasers (VCSELs) and 3- \mu \text{m} silicon waveguides. The system includes a photoresist lens and a total internal reflection mirror, which allows for passive alignment and flip-chip bonding (FCB) of VCSELs. The simulated coupling loss is 0.7 dB, in optimal conditions, which increases to 1 dB when 3- and 20- \mu \text{m} alignment tolerances are considered in lateral and longitudinal directions, respectively. The system is built by post-processing lens and metallic wiring on the backside of a 3- \mu \text{m} silicon photonic platform. After FCB and embedding of the VCSELs, the system performance is characterized, and VCSEL-to-waveguide coupling efficiency of -7.5 dB is obtained

Modularly and Hybrid Integrated SiPh/InP Wavelength Blocker Switch for Metro Networks

We report the proof-of-concept functional demonstration of the first hybrid integrated wavelength blocker switch for metro network realized via hybrid integration of passive SiPh deMux/Mux AWGs and active InP SOA gates. Error free 10 Gbps/channel NRZ transmission per wavelength channel is demonstrated with <1.5dB power-penetty