Model-Invariant Hybrid RANS-LES Computations on Unstructured Meshes

Hybrid RANS-LES computations combine the bene ts of RANS and LES so that LES is used in regions where the accuracy of RANS deteriorates. The numerous hybrid approaches are limited by the speci cation of the LES-RANS interface, which can cause nonphysical results such as log-layer mismatch and low shear stress. The hybrid RANS-LES approach based on the concept of model invariance, mitigates these problems, enabling seamless blending of the RANS and LES regions while forming the basis for interpreting the results in the interface region. This hybrid formulation was implemented in the NASA FUN3D unstructured code and computations for ow in a channel at Reynolds number of 3300 (based on the channel half width h and the bulk in ow velocity u(infinity) were carried out. An isotropic stochastic turbulence generator was implemented to generate in ow turbulence. The present approach was able to eliminate the log-layer mismatch and predict the shear stress fairly well. Thus, the model-invariant hybrid formulation coupled with the isotropic turbulence in ow generation serves as a physically meaningful way of performing hybrid RANS-LES computations

Stiffness of Contacts Between Rough Surfaces

The effect of self-affine roughness on solid contact is examined with molecular dynamics and continuum calculations. The contact area and normal and lateral stiffnesses rise linearly with the applied load, and the load rises exponentially with decreasing separation between surfaces. Results for a wide range of roughnesses, system sizes and Poisson ratios can be collapsed using Persson's contact theory for continuous elastic media. The atomic scale response at the interface between solids has little affect on the area or normal stiffness, but can greatly reduce the lateral stiffness. The scaling of this effect with system size and roughness is discussed.Comment: 4 pages, 3 figure

Photon emission from out of equilibrium dissipative parton plasma

Using the second order Israel-Stewart hydrodynamics we discuss the effect of viscosity on photon production in a parton plasma created in relativistic heavy ion collisions. We find that photon production rates can enhance by several factors due to the viscous effect in a chemically nonequilibrated plasma.Comment: 6 pages + 4 figure

Design of Low Power Data Preserving Flip Flop Using MTCMOS Technique

In order to reduce overall power consumption, a well-known technique is to scale supply voltages. However, to maintain performance, device threshold voltages must scale as well, which will cause sub threshold leakage currents to increase exponentially. The sub threshold voltage has to affect the two parameters one is the delay and other one is the sub threshold leakage current. Smaller the threshold voltage smaller will be delay while larger will be the sub threshold current. Controlling sub threshold leakage has been explored significantly in the literature, especially in the context of reducing leakage currents in burst mode type circuits, where the system spends the majority of the time in an idle standby, or sleep, state where no computation is taking place. MTCMOS or multi-threshold CMOS has been proposed as a very effective technique for reducing leakage currents during the standby by state by utilizing high sleep devices to gate the power supplies of a low logic block. Although MTCMOS circuit techniques are effective for controlling leakage currents in combinational logic, a drawback is that it can cause internal nodes to float, and cannot be directly used in standard memory cells without corrupting stored data. As a result, several researchers have explored possible MTCMOS latch designs that can reduce leakage currents yet maintain state during the standby modes. In this work a data preserving flip flop with reduced leakage power is designed using MTCMOS technique in 90nm technology with the help of CADENCE tool. The simulation results have shown that the leakage power is reduced by 25.70% compared to CMOS flip flop

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group’s unique pulse electroplating method

Spatial heterogeneities in the mass concentration of near surface aerosols over the Arabian Sea during ICARB

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