Diffractometer‐Control Software For Bragg‐Rod Measurements

We present Generalized Diffractometer Control (gdc), a diffractometer‐control software package developed specifically for high‐precision measurements of Bragg rods; we discuss its features and analyze its performance in data collection. gdc, implemented at several APS beamlines, controls a six‐circle diffractometer in either Eulerian or kappa geometry, yet does not assume a mechanically ideal diffractometer; instead, the measured directions of the diffractometer axes (and the direction of the incident beam) are input parameters. The Labview‐based program features a graphical interface, making it straightforward to find all the commands and operations. Other features include optimized scans along Bragg rods, straightforward background subtraction, and extensive sets of pseudomotors. © 2004 American Institute of PhysicsPeer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87660/2/1221_1.pd

Gas-Phase Synthesis for Label-Free Biosensors: Zinc-Oxide Nanowires Functionalized with Gold Nanoparticles

Metal oxide semiconductor nanowires have important applications in label-free biosensing due to their ease of fabrication and ultralow detection limits. Typically, chemical functionalization of the oxide surface is necessary for specific biological analyte detection. We instead demonstrate the use of gas-phase synthesis of gold nanoparticles (Au NPs) to decorate zinc oxide nanowire (ZnO NW) devices for biosensing applications. Uniform ZnO NW devices were fabricated using a vapor-solid-liquid method in a chemical vapor deposition (CVD) furnace. Magnetron-sputtering of a Au target combined with a quadrupole mass filter for cluster size selection was used to deposit Au NPs on the ZnO NWs. Without additional functionalization, we electrically detect DNA binding on the nanowire at sub-nanomolar concentrations and visualize individual DNA strands using atomic force microscopy (AFM). By attaching a DNA aptamer for streptavidin to the biosensor, we detect both streptavidin and the complementary DNA strand at sub-nanomolar concentrations. Au NP decoration also enables sub-nanomolar DNA detection in passivated ZnO NWs that are resilient to dissolution in aqueous solutions. This novel method of biosensor functionalization can be applied to many semiconductor materials for highly sensitive and label-free detection of a wide range of biomolecules

Probing electron beam effects with chemoresistive nanosensors during in situ environmental transmission electron microscopy

We report in situ and ex situ fabrication approaches to construct p-type (CuO) and n-type (SnO2) metal oxide nanowire devices for operation inside an environmental transmission electron microscope (TEM). By taking advantage of their chemoresistive properties, the nanowire devices were employed as sensitive probes for detecting reactive species induced by the interactions of high-energy electrons with surrounding gas molecules, in particular, for the case of O-2 gas pressures up to 20 mbar. In order to rationalize our experimental findings, a computational model based on the particle-in-cell method was implemented to calculate the spatial distributions of scattered electrons and ionized oxygen species in the environmental TEM. Our approach enables the a priori identification and qualitative measurement of undesirable beam effects, paving the way for future developments related to their mitigation. Published by AIP Publishing.Peer reviewe

Heteroepitaxy of La2O3La_2O_3 and La2−xYxO3La_{2-x}Y_xO_3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

GaAs metal–oxide–semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the interface trap states by growing an epitaxial layer of high-k dielectric oxide, $La_{2–x}Y_xO_3$, on GaAs(111)A. High-quality epitaxial $La_{2–x}Y_xO_3$ thin films are achieved by an ex situ atomic layer deposition (ALD) process, and GaAs MOS capacitors made from this epitaxial structure show very good interface quality with small frequency dispersion and low interface trap densities $(D_{it})$. In particular, the $La_2O_3$/GaAs interface, which has a lattice mismatch of only 0.04%, shows very low $D_{it}$ in the GaAs bandgap, below $3 × 10^{11} cm^{–2} eV^{–1}$ near the conduction band edge. The $La_2O_3$/GaAs capacitors also show the lowest frequency dispersion of any dielectric on GaAs. This is the first achievement of such low trap densities for oxides on GaAs.Chemistry and Chemical Biolog