About the screening of the charge of a proton migrating in a metal

The amount of screening of a proton in a metal, migrating under the influence of an applied electric field, is calculated using different theoretical formulations. First the lowest order screening expression derived by Sham (1975) is evaluated. In addition 'exact' expressions are evaluated which were derived according to different approaches. For a proton in a metal modeled as a jellium the screening appears to be 15 +/- 10 %, which is neither negligible not reconcilable with the controversial full-screening point of view of Bosvieux and Friedel (1962). In reconsidering the theory of electromigration, a new simplified linear-response expression for the driving force is shown to lead to essentially the same result as found by Sorbello (1985), who has used a rather complicated technique. The expressions allow for a reduction such that only the scattering phase shifts of the migrating impurity are required. Finally it is shown that the starting formula for the driving force of Bosvieux and Friedel leads exactly to the zero-temperature limit of well-established linear response descriptions, by which the sting of the controversy has been removed.Comment: 14 pages, 5 figure

Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlO$_x$ insulating barrier in tunnel junctions of the type FM/NM/I/FM (FM=CoFe). Enhanced resistance switching occurs with increasing maximum applied current (\Imax), until a plateau of constant CIS is reached for \Imax\sim65 mA (CIS$\sim$60%) and above. However, such high electrical currents also lead to a large ($\sim$9%) irreversible resistance decrease, indicating barrier degradation. Anomalous voltage-current characteristics with negative derivative were also observed near \pm\Imax and this effect is here attributed to heating in the tunnel junction. One observes that the current direction for which resistance switches in FM/NM/I/FM (clockwise) is opposite to that of FM/I/FM tunnel junctions (anti-clockwise). This effect will be discussed in terms of a competition between the electromigration contributions due to the so called direct and wind forces. It will be shown that the direct force is likely to dominate electromigration in the Ta (NM) layers, while the wind contribution likely dominates in the CoFe (FM) layers

The role of Joule heating in the formation of nanogaps by electromigration

We investigate the formation of nanogaps in gold wires due to electromigration. We show that the breaking process will not start until a local temperature of typically 400 K is reached by Joule heating. This value is rather independent of the temperature of the sample environment (4.2-295 K). Furthermore, we demonstrate that the breaking dynamics can be controlled by minimizing the total series resistance of the system. In this way, the local temperature rise just before break down is limited and melting effects are prevented. Hence, electrodes with gaps < 2 nm are easily made, without the need of active feedback. For optimized samples, we observe quantized conductance steps prior the gap formation.Comment: including 7 figure

Current-driven orbital order-disorder transition in LaMnO3

We report significant influence of electric current on the orbital order-disorder transition in LaMnO3. The transition temperature T_OO, thermal hysteresis in the resistivity (rho) versus temperature (T) plot around T_OO, and latent heat L associated with the transition decrease with the increase in current density. Eventually, at a critical current density, L reaches zero. The transition zone, on the other hand, broadens with the increase in current density. The states at ordered, disordered, and transition zone are all found to be stable within the time window from ~10^-3 to ~10^4 seconds.Comment: 7 pages including 5 figures; resolution of Fig.1 is better here than the published versio

Are current-induced forces conservative?

The expression for the force on an ion in the presence of current can be derived from first principles without any assumption about its conservative character. However, energy functionals have been constructed that indicate that this force can be written as the derivative of a potential function. On the other hand, there exist compelling specific arguments that strongly suggest the contrary. We propose physical mechanisms that invalidate such arguments and demonstrate their existence with first-principles calculations. While our results do not constitute a formal resolution to the fundamental question of whether current-induced forces are conservative, they represent a substantial step forward in this direction.Comment: 4 pages, 4 Figures, submitted to PR

Time-dependent quantum transport with superconducting leads: a discrete basis Kohn-Sham formulation and propagation scheme

In this work we put forward an exact one-particle framework to study nano-scale Josephson junctions out of equilibrium and propose a propagation scheme to calculate the time-dependent current in response to an external applied bias. Using a discrete basis set and Peierls phases for the electromagnetic field we prove that the current and pairing densities in a superconducting system of interacting electrons can be reproduced in a non-interacting Kohn-Sham (KS) system under the influence of different Peierls phases {\em and} of a pairing field. An extended Keldysh formalism for the non-equilibrium Nambu-Green's function (NEGF) is then introduced to calculate the short- and long-time response of the KS system. The equivalence between the NEGF approach and a combination of the static and time-dependent Bogoliubov-deGennes (BdG) equations is shown. For systems consisting of a finite region coupled to ${\cal N}$ superconducting semi-infinite leads we numerically solve the static BdG equations with a generalized wave-guide approach and their time-dependent version with an embedded Crank-Nicholson scheme. To demonstrate the feasibility of the propagation scheme we study two paradigmatic models, the single-level quantum dot and a tight-binding chain, under dc, ac and pulse biases. We provide a time-dependent picture of single and multiple Andreev reflections, show that Andreev bound states can be exploited to generate a zero-bias ac current of tunable frequency, and find a long-living resonant effect induced by microwave irradiation of appropriate frequency.Comment: 20 pages, 9 figures, published versio

Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 \AA) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.Comment: 10 pages, 3 figure

Spin-Hall interface resistance in terms of Landauer type spin dipoles

We considered the nonequlibrium spin dipoles induced around spin independent elastic scatterers by the intrinsic spin-Hall effect associated with the Rashba spin-orbit coupling. The normal to 2DEG spin polarization has been calculated in the diffusion range around the scatterer. We found that although around each impurity this polarization is finite, the corresponding macroscopic spin density, obtained via averaging of individual spin dipole distributions over impurity positions is zero in the bulk. At the same time, the spin density is finite near the boundary of 2DEG, except for a special case of a hard wall boundary. The boundary value of the spin polarization can be associated with the interface spin-Hall resistance determining the additional energy dissipation due to spin accumulation.Comment: 7 page