Probing the local temperature of a 2DEG microdomain with a quantum dot: measurement of electron-phonon interaction

We demonstrate local detection of the electron temperature in a two-dimensionalmicrodomain using a quantum dot. Our method relies on the observation that a temperature bias across the dot changes the functional form of Coulomb-blockade peaks. We apply our results to the investigation of electron-energy relaxation at subkelvin temperatures, find that the energy flux from electrons into phonons is proportional to the fifth power of temperature, and give a measurement of the coupling constant.Comment: 5 pages, 4 figure

Hybrid InAs nanowire-vanadium proximity SQUID

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices with very large magnetic-field modulation of the critical current. All these properties make these devices attractive for on-chip quantum-circuit implementation.Comment: 3 pages, 3 figure

Inter-edge strong-to-weak scattering evolution at a constriction in the fractional quantum Hall regime

Gate-voltage control of inter-edge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral Luttinger liquids is shown at low temperatures at specific values of the backscattering strength. When the latter is lowered by changing the gate voltage the zero-bias peak of the tunneling conductance evolves into a minimum and a non-linear quasihole-like characteristic emerges. Our analysis emphasizes the role of the local filling factor in the split-gate constriction region.Comment: 4 pages, 4 figure

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.</p