Prediction of morphological changes of catalyst materials under reaction conditions by combined: Ab initio thermodynamics and microkinetic modelling

In this article, we couple microkinetic modelling, ab initio thermodynamics and Wulff-Kaishew construction to describe the structural variation of catalyst materials as a function of the chemical potential in the reactor. We focus specifically on experiments of catalytic partial oxidation (CPO) of methane on Rh/α-Al2O3. We employ a detailed structureless microkinetic model to calculate the profiles of the gaseous species molar fractions along the reactor coordinate and to select the most abundant reaction intermediates (MARIs) populating the catalyst surfaces in different zones of the reactor. Then, we calculate the most stable bulk and surface structures of the catalyst under different conditions of the reaction environment with density functional theory (DFT) calculations and ab initio thermodynamics, considering the presence of the MARIs on the catalyst surface in thermodynamic equilibrium with the partial pressures of their reservoirs in the gas phase surrounding the catalyst. Finally, we exploit the Wulff-Kaishew construction method to estimate the three-dimensional shape of the catalyst nanoparticles and the distribution of the active sites along the reactor coordinate. We find that the catalyst drastically modifies its morphology during CPO reaction by undergoing phase transition, in agreement with spectroscopy studies reported in the literature. The framework is also successfully applied for the analysis and interpretation of chemisorption experiments for catalyst characterization. These results demonstrate the crucial importance of rigorously accounting for the structural effect in microkinetic modeling simulations and pave the way towards the development of structure-dependent microkinetic analysis of catalytic processes

Stacking-dependent energetics and electronic structure of ultrathin polymorphic V2VI3 topological insulator nanofilms

Topological insulators represent a paradigm shift in surface physics. The most extensively studied Bi2Se3-type topological insulators exhibit layered structures, wherein neighboring layers are weakly bonded by van der Waals interactions. Using first-principles density-functional theory calculations, we investigate the impact of the stacking sequence on the energetics and band structure properties of three polymorphs of Bi2Se3, Bi2Te3, and Sb2Te3. Considering their ultrathin films up to 6 nm as a function of its layer thickness, the overall dispersion of the band structure is found to be insensitive to the stacking sequence, while the band gap is highly sensitive, which may also affect the critical thickness for the onset of the topologically nontrivial phase. Our calculations are consistent with both experimental and theoretical results, where available. We further investigate tribological layer slippage, where we find a relatively low energy barrier between two of the considered structures. Both the stacking-dependent band gap and low slippage energy barriers suggest that polymorphic stacking modification may offer an alternative route for controlling the properties of this new state of matter

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified

Anharmonicity in the High-Temperature Cmcm Phase of SnSe: Soft Modes and Three-Phonon Interactions

The layered semiconductor SnSe is one of the highest-performing thermoelectric materials known. We demonstrate, through a first-principles lattice-dynamics study, that the high-temperature Cmcm phase is a dynamic average over lower-symmetry minima separated by very small energetic barriers. Compared to the low-temperature Pnma phase, the Cmcm phase displays a phonon softening and enhanced three-phonon scattering, leading to an anharmonic damping of the low-frequency modes and hence the thermal transport. We develop a renormalisation scheme to quantify the effect of the soft modes on the calculated properties, and confirm that the anharmonicity is an inherent feature of the Cmcm phase. These results suggest a design concept for thermal insulators and thermoelectric materials, based on displacive instabilities, and highlight the power of lattice-dynamics calculations for materials characterization.Comment: Merged article + supporting informatio