Studies in Chlorination : Part I - Magnesite

Preparation of anhydrous magnesium chloride by dehydration from hydrated magnesium chloride is not straight forward after dihydrate stage due to hydrolysis. Magnesium oxide and oxy-chloride contaminate the final product in uncertain amounts

Numerical simulation of exciton dynamics in Cu2O at ultra low temperatures within a potential trap

We have studied theoretically the relaxation behaviour of excitons in cuprous oxide (Cu2O) at ultra low temperatures when excitons are confined within a potential trap by solving numerically the Boltzmann equation. As relaxation processes, we have included in this paper deformation potential phonon scattering, radiative and non-radiative decay and Auger decay. The relaxation kinetics has been analysed for temperatures in the range between 0.3K and 5K. Under the action of deformation potential phonon scattering only, we find for temperatures above 0.5K that the excitons reach local equilibrium with the lattice i.e. that the effective local temperature is coming down to bath temperature, while below 0.5K a non-thermal energy distribution remains. Interestingly, for all temperatures the global spatial distribution of excitons does not reach the equilibrium distribution, but stays at a much higher effective temperature. If we include further a finite lifetime of the excitons and the two-particle Auger decay, we find that both the local and the global effective temperature are not coming down to bath temperature. In the first case we find a Bose-Einstein condensation (BEC) to occur for all temperatures in the investigated range. Comparing our results with the thermal equilibrium case, we find that BEC occurs for a significantly higher number of excitons in the trap. This effect could be related to the higher global temperature, which requires an increased number of excitons within the trap to observe the BEC. In case of Auger decay, we do not find at any temperature a BEC due to the heating of the exciton gas

Condensation of Excitons in Cu2O at Ultracold Temperatures: Experiment and Theory

We present experiments on the luminescence of excitons confined in a potential trap at milli-Kelvin bath temperatures under cw-excitation. They reveal several distinct features like a kink in the dependence of the total integrated luminescence intensity on excitation laser power and a bimodal distribution of the spatially resolved luminescence. Furthermore, we discuss the present state of the theoretical description of Bose-Einstein condensation of excitons with respect to signatures of a condensate in the luminescence. The comparison of the experimental data with theoretical results with respect to the spatially resolved as well as the integrated luminescence intensity shows the necessity of taking into account a Bose-Einstein condensed excitonic phase in order to understand the behaviour of the trapped excitons.Comment: 41 pages, 23 figure

Oxidation mechanism in metal nanoclusters: Zn nanoclusters to ZnO hollow nanoclusters

Zn nanoclusters (NCs) are deposited by Low-energy cluster beam deposition technique. The mechanism of oxidation is studied by analysing their compositional and morphological evolution over a long span of time (three years) due to exposure to ambient atmosphere. It is concluded that the mechanism proceeds in two steps. In the first step, the shell of ZnO forms over Zn NCs rapidly up to certain limiting thickness: with in few days -- depending upon the size -- Zn NCs are converted to Zn-ZnO (core-shell), Zn-void-ZnO, or hollow ZnO type NCs. Bigger than ~15 nm become Zn-ZnO (core-shell) type: among them, NCs above ~25 nm could able to retain their initial geometrical shapes (namely triangular, hexagonal, rectangular and rhombohedral), but ~25 to 15 nm size NCs become irregular or distorted geometrical shapes. NCs between ~15 to 5 nm become Zn-void-ZnO type, and smaller than ~5 nm become ZnO hollow sphere type i.e. ZnO hollow NCs. In the second step, all Zn-void-ZnO and Zn-ZnO (core-shell) structures are converted to hollow ZnO NCs in a slow and gradual process, and the mechanism of conversion proceeds through expansion in size by incorporating ZnO monomers inside the shell. The observed oxidation behaviour of NCs is compared with theory of Cabrera - Mott on low-temperature oxidation of metal.Comment: 9 pages, 8 figure

Benefits and barriers in the design of harmonized access agreements for international data sharing

In the past decade, there has been a surge in the number of sensitive human genomic and health datasets available to researchers via Data Access Agreements (DAAs) and managed by Data Access Committees (DACs). As this form of sharing increases, so do the challenges of achieving a reasonable level of data protection, particularly in the context of international data sharing. Here, we consider how excessive variation across DAAs can hinder these goals, and suggest a core set of clauses that could prove useful in future attempts to harmonize data governance

MULTIVALUED FIXED POINT RESULTS AND STABILITY OF FIXED POINT SETS IN METRIC SPACES

In this paper we establish certain multivalued fixed point results for mappings satisfying rational type almost contractions involving a control function in the framework of metric spaces. The main result is supported with an example. We use Hausdorff distance in our theorems. We also study the stability of fixed point sets of above mentioned set valued contractions. By applications of the multivalued results we obtain certain fixed point theorems of singlevalued mappings

The role of growth atmosphere on the structural and optical quality of defect free ZnO films for strong ultraviolet emission

Highly c-axis oriented wurtzite structured ZnO thin films were deposited on silicon substrates using pulsed laser deposition (PLD) by ablating a ZnO target in different atmospheres, including vacuum, argon and oxygen in the deposition chamber. The stress in the films was shown to vary from −3.83 to −0.03 GPa as a function of the chamber atmosphere. The minimum compressive stress (−0.03 GPa) was observed for the oxygen atmosphere. X-ray photoelectron spectroscopy data indicated that the O1s peak consists of three components designated as O1 (due to ZnO), O2 (due to defects) and O3 (due to adsorbed species). A small defect level emission was obtained in the luminescence spectra of the ZnO film deposited in the oxygen atmosphere, while strong ultraviolet (UV) emission was observed for the ZnO films deposited in the vacuum and argon atmosphere. These PLD grown ZnO thin films have the potential to be used as sources of UV radiation in light emitting devices.The authors want to thank to the National Laser Centre, CSIR, Pretoria for providing pulsed laser deposition technique. This work is based on the research supported by the South African Research Chairs Initiative of the Department of Science and Technology, and the National Research Foundation of South Africa. The PL system used in this study is supported both technically and financially by the rental pool programme of the National Laser Centre. The financial support from the Cluster program of the University of the Free State is highly recognized.Highly c-axis oriented wurtzite structured ZnO thin films were deposited on silicon substrates using pulsed laser deposition (PLD) by ablating a ZnO target in different atmospheres, including vacuum, argon and oxygen in the deposition chamber. The stress in the films was shown to vary from −3.83 to −0.03 GPa as a function of the chamber atmosphere. The minimum compressive stress (−0.03 GPa) was observed for the oxygen atmosphere. X-ray photoelectron spectroscopy data indicated that the O1s peak consists of three components designated as O1 (due to ZnO), O2 (due to defects) and O3 (due to adsorbed species). A small defect level emission was obtained in the luminescence spectra of the ZnO film deposited in the oxygen atmosphere, while strong ultraviolet (UV) emission was observed for the ZnO films deposited in the vacuum and argon atmosphere. These PLD grown ZnO thin films have the potential to be used as sources of UV radiation in light emitting devices