Nanogaps with very large aspect ratios for electrical measurements

For nanoscale electrical characterization and device fabrication it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such Ti/Au electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.Comment: 4 pages, 4 figure

Interplay of bulk and interface effects in the electric-field driven transition in magnetite

Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the lateral configuration, the channel length is less than 2 $\mu$m, and voltage-probe wires $\sim$100 nm in width are directly patterned within the channel. Multilead measurements quantitatively separate the contributions of each electrode interface and the magnetite channel. We demonstrate that on the onset of the transition contact resistances at both source and drain electrodes and the resistance of magnetite channel decrease abruptly. Temperature dependent electrical measurements below the Verwey temperature indicate thermally activated transport over the charge gap. The behavior of the magnetite system at a transition point is consistent with a theoretically predicted transition mechanism of charge gap closure by electric field.Comment: 6 pages, 5 figures, to appear in PR

The origin of hysteresis in resistive switching in magnetite is Joule heating

In many transition metal oxides the electrical resistance is observed to undergo dramatic changes induced by large biases. In magnetite, Fe$_3$O$_4$, below the Verwey temperature, an electric field driven transition to a state of lower resistance was recently found, with hysteretic current-voltage response. We report the results of pulsed electrical conduction measurements in epitaxial magnetite thin films. We show that while the high- to low-resistance transition is driven by electric field, the hysteresis observed in $I-V$ curves results from Joule heating in the low resistance state. The shape of the hysteresis loop depends on pulse parameters, and reduces to a hysteresis-free "jump" of the current provided thermal relaxation is rapid compared to the time between voltage pulses. A simple relaxation time thermal model is proposed that captures the essentials of the hysteresis mechanism.Comment: 7 pages, 6 figure

Statistical distribution of the electric field-driven switching of the Verwey state in Fe3O4

The insulating state of magnetite (Fe3O4) can be disrupted by a sufficiently large dc electric field. Pulsed measurements are used to examine the kinetics of this transition. Histograms of the switching voltage show a transition width that broadens as the temperature is decreased, consistent with trends seen in other systems involving “unpinning” in the presence of disorder. The switching distributions are also modified by an external magnetic field on a scale comparable to that required to reorient the magnetization

Reflectance anisotropy spectroscopy of magnetite (110) surfaces

Reflectance anisotropy spectroscopy (RAS) has been used to measure the optical anisotropies of bulk and thin-film Fe3O4(110) surfaces. The spectra indicate that small shifts in energy of the optical transitions, associated with anisotropic strain or electric field gradients caused by the (110) surface termination or a native oxide layer, are responsible for the strong signal observed. The RAS response was then measured as a function of temperature. A distinct change in the RAS line-shape amplitude was observed in the spectral range from 0.8 to 1.6 eV for temperatures below the Verwey transition of the crystal. Finally, thin-film magnetite was grown by molecular beam epitaxy on MgO(110) substrates. Changes in the RAS spectra were found for different film thickness, suggesting that RAS can be used to monitor the growth of magnetite (110) films in situ. The thickness dependence of the RAS is discussed in terms of various models for the origin of the RAS signal

Atomic-scale structure and properties of highly stable antiphase boundary defects in Fe3O4

The complex and intriguing properties of the ferrimagnetic half metal magnetite (Fe3O4) are of continuing fundamental interest as well as being important for practical applications in spintronics, magnetism, catalysis and medicine. There is considerable speculation concerning the role of the ubiquitous antiphase boundary (APB) defects in magnetite, however, direct information on their structure and properties has remained challenging to obtain. Here we combine predictive first principles modelling with high-resolution transmission electron microscopy to unambiguously determine the three-dimensional structure of APBs in magnetite. We demonstrate that APB defects on the {110} planes are unusually stable and induce antiferromagnetic coupling between adjacent domains providing an explanation for the magnetoresistance and reduced spin polarization often observed. We also demonstrate how the high stability of the {110} APB defects is connected to the existence of a metastable bulk phase of Fe3O4, which could be stabilized by strain in films or nanostructures

Anomalous strain relaxation behaviour of Fe3O4/MgO (100) heterostructures grown using molecular beam epitaxy

Strain relaxation studies in epitaxial magnetite (Fe3O4) thin films grown on MgO (100) substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700 nm. This thickness is much greater than the critical thickness t(c) for strain relaxation estimated from mismatch strain. Anomalous strain relaxation behavior of Fe3O4/MgO heteroepitaxy is attributed to the reduction in the effective stress experienced by the film due to the presence of antiphase boundaries (APBs) that enable the film to maintain coherency with the substrate at large thickness. However, the stress accommodation in the film depends upon the nature and density of the APBs