135 research outputs found

    Optical gain in erbium-implanted Al2O3 waveguides

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    Al/sub 2/O/sub 3/ ridge waveguides implanted with 1.3 at.% Er, pumped with 2.5 mW 1.47 mu m light show 4.5 dB/cm enhancement of a 1.53 mu m signal beam. The maximum gain is limited by cooperative upconversion effects. Calculations for lower Er concentrations show that 1 dB/cm net optical gain is possible at 10 mW pump powe

    Er3+ absorption and optical gain in Al2O3 waveguides

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    Upconversion in Er-implanted Al2O3 waveguides

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    When pumped with a 1.48 mu m laser diode, Er-implanted Al/sub 2/O/sub 3/ ridge waveguides emit a broad spectrum consisting of several distinct peaks having wavelengths ranging from the midinfrared (1.53 mu m) to the visible (520 nm). In order to explain these observations, three different upconversion mechanisms are considered: cooperative upconversion, excited state absorption, and pair-induced quenching. It is found that for samples with a high Er concentration (1.4 at.%), cooperative upconversion completely dominates the deexcitation of the Er/sup 3+/ ions. For a much lower concentration (0.12 at.%), the influence of cooperative upconversion is strongly reduced, and another upconversion effect becomes apparent: excited state absorption. These conclusions are based on measurements of the luminescence emission versus pump intensity, and also on measured luminescence decay curves. The upconversion coefficient is found to be (4+or-1)*10/sup -18/ cm/sup 3//s; the excited state absorption cross section is (0.9+or-0.3)*10/sup -21/ cm/sup 2/. It is shown that in spite of these upconversion effects, a high fraction of the Er/sup 3+/ can be excited at low pump powers. For pump powers between 2 and 10 mW, the optimum Er concentration is calculated. The results show that for an Er concentration of 0.5 at.%, more than 2 dB/cm net optical gain is achievable at a pump power less than 10 m

    High concentration optical doping of Al2O3 waveguide films by Er ion implantation

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    Unravelling the evolution of Africa's drainage basins through a widespread freshwater fish, the African sharptooth catfish Clarias gariepinus

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    Aim The formation history of Africa's current river basins remains largely unknown. In order to date changes in landscape and climate, we studied the biogeography of the African freshwater fish with the largest natural distribution. We also validated biogeographical units. Location Continental Africa. Taxon Clarias gariepinus sl. Methods We investigated mitochondrial cytb sequences of 443 individuals from 97 localities, using a haplotype network and a genetic landscape analysis. We inferred a dated phylogeny using maximum likelihood and Bayesian inference approaches and reconstructed ancestral areas with S-DEC and S-DIVA models. Microsatellite genotyping complemented the mitochondrial approach in the Congo basin, where the latter revealed complex patterns. Results Limited differentiation is found in northern and south-western Africa, and sharp genetic differentiation in the continent's east and centre. Populations with affinities to neighbouring basins occur at the edges of the Congo province. High diversity exists in the south of the Congo basin. The Zambezi province is partitioned into eastern, central and western sectors. In the east, specimens were related to those from the Congo. In the west, they were similar to Southern representatives. Phylogenetic inference placed the origin of C. gariepinus in the East Coast, with intraspecific diversification starting around the Great Lakes. These events occurred ca. 4.8-1.65 and 2.3-0.8 MYA respectively. Main conclusions Clades of C. gariepinus sl. show a clear geographical signature. The origin of C. gariepinus in the East Coast and diversification around the Great Lakes coincided with the periods of increased aridity. Low genetic differentiation in northern and southern Africa may result from connectivity during recent periods of higher rainfall. In contrast to other widespread African freshwater fish, colonization rather than extinction seemed to mediate distribution patterns. This can be explained by a high ecological tolerance. We highlight the species' suitability to study landscape and climate evolution at various scales.Peer reviewe

    Erbium ion implantation doping of opto-electronic materials operating at 1.5 mu m

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    Soda-lime silicate and Al/sub 2/O/sub 3/ waveguide films, LiNbO/sub 3/ single crystal, as well as crystal Si are doped with erbium by ion implantation. All materials show luminescence at 1.5 mu m, characteristic for Er, with lifetimes up to 12 m

    On the equivalence of the Langevin and auxiliary field quantization methods for absorbing dielectrics

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    Recently two methods have been developed for the quantization of the electromagnetic field in general dispersing and absorbing linear dielectrics. The first is based upon the introduction of a quantum Langevin current in Maxwell's equations [T. Gruner and D.-G. Welsch, Phys. Rev. A 53, 1818 (1996); Ho Trung Dung, L. Kn\"{o}ll, and D.-G. Welsch, Phys. Rev. A 57, 3931 (1998); S. Scheel, L. Kn\"{o}ll, and D.-G. Welsch, Phys. Rev. A 58, 700 (1998)], whereas the second makes use of a set of auxiliary fields, followed by a canonical quantization procedure [A. Tip, Phys. Rev. A 57, 4818 (1998)]. We show that both approaches are equivalent.Comment: 7 pages, RevTeX, no figure

    Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene

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    Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active control of the energy flow has remained challenging. Here, we demonstrate in-situ electrical control of the relaxation pathways of excited erbium ions, which emit light at the technologically relevant telecommunication wavelength of 1.5 Ό\mum. By placing the erbium at a few nanometres distance from graphene, we modify the relaxation rate by more than a factor of three, and control whether the emitter decays into either electron-hole pairs, emitted photons or graphene near-infrared plasmons, confined to <<15 nm to the sheet. These capabilities to dictate optical energy transfer processes through electrical control of the local density of optical states constitute a new paradigm for active (quantum) photonics.Comment: 9 pages, 4 figure
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