Erbium ion implantation doping of opto-electronic materials operating at 1.5 mu m

Authors
Publication date
1 January 1993
Publisher
Swiss Electrotechical Association

Abstract

Soda-lime silicate and Al/sub 2/O/sub 3/ waveguide films, LiNbO/sub 3/ single crystal, as well as crystal Si are doped with erbium by ion implantation. All materials show luminescence at 1.5 mu m, characteristic for Er, with lifetimes up to 12 m

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