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Erbium ion implantation doping of opto-electronic materials operating at 1.5 mu m
Authors
C. Buchal
J.S. Custer
+9Â more
M.B.J. Diemeer
M. Fleuster
B. Hendriksen
van den, G.N. Hoven
Y.S. Oei
A. Polman
M.K. Smit
E. Snoeks
van, J.W.M. Uffelen
Publication date
1 January 1993
Publisher
Swiss Electrotechical Association
Abstract
Soda-lime silicate and Al/sub 2/O/sub 3/ waveguide films, LiNbO/sub 3/ single crystal, as well as crystal Si are doped with erbium by ion implantation. All materials show luminescence at 1.5 mu m, characteristic for Er, with lifetimes up to 12 m
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