Ultra-thin BCB bonding for heterogeneous integration of III-V devices and SOI photonic components

This paper describes a novel way to integrate active III-V devices and SOI passive devices by bonding a III-V film on top of a processed SOI waveguide substrate using a 200nm thick Benzocyclobutene (BCB) bonding layer

Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit

Laser emission from an InP/InGaAsP thin film epitaxial layer bonded to a Silicon-on-Insulator waveguide circuit was observed. Adhesive bonding using divinyl-tetramethyldisiloxane-benzocyclobutene (DVS-BCB) was used to integrate the InP/InGaAsP epitaxial layers onto the waveguide circuit. Light is coupled from the laser diode into an underlying waveguide using an adiabatic inverted taper approach. 0.9mW optical power was coupled into the SOI waveguide using a 500µm long laser. Besides for use as a laser diode, the same type of devices can be used as a photodetector. 50µm long devices obtained a responsivity of 0.23A/W

Demonstration of an ultra-short polarization converter in InGaAsP/InP membrane

An ultra-short (<10 µm length) polarization converter is demonstrated in an indium phosphide based membrane. Measurements show very high polarization conversion efficiency (97 %) with low excess losses (~ 1 dB)