35 research outputs found
Exciton-phonon relaxation bottleneck and radiative decay of thermal exciton reservoir in two-dimensional materials
We study exciton radiative decay in a two-dimensional material, taking into
account large thermal population in the non-radiative states, from which
excitons are scattered into the radiative states by acoustic phonons. We find
an analytical solution of the kinetic equation for the non-equilibrium
distribution function of excitons in the radiative states. Our estimates for
bright excitons in transition metal dichalcogenides indicate a strong depletion
of radiative state population due to insufficient exciton-phonon scattering
rate at low temperatures.Comment: 8 pages, 4 figure
Fine structure of -excitons in multilayers of transition metal dichalcogenides
Reflectance and magneto-reflectance experiments together with theoretical
modelling based on the approach have been employed to study
the evolution of direct bandgap excitons in MoS layers with a thickness
ranging from mono- to trilayer. The extra excitonic resonances observed in
MoS multilayers emerge as a result of the hybridization of Bloch states of
each sub-layer due to the interlayer coupling. The properties of such excitons
in bi- and trilayers are classified by the symmetry of corresponding crystals.
The inter- and intralayer character of the reported excitonic resonances is
fingerprinted with the magneto-optical measurements: the excitonic -factors
of opposite sign and of different amplitude are revealed for these two types of
resonances. The parameters describing the strength of the spin-orbit
interaction are estimated for bi- and trilayer MoS.Comment: 14 pages, 10 figure
Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe and MoS
We report on the theoretical and experimental investigation of
valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances
in monolayers WSe and MoS induced by strong circularly polarized
nonresonant optical fields. We predict and observe transient shifts of both 1sA
and 1sB exciton transitions in the linear interaction regime. The theoretical
description is based on semiconductor Bloch equations. The solutions of the
equations are obtained with a modified perturbation technique, which takes into
account many-body Coulomb interaction effects. These solutions allow to explain
the polarization dependence of the shifts and calculate their values
analytically. We found experimentally the limits of the applicability of the
theoretical description by observing the transient exciton spectra change due
to many-body effects at high field amplitudes of the driving wave.Comment: 20 pages, 9 figures, this manuscript is related to the "Giant
valley-selective Stark and Bloch-Siegert shifts of exciton resonances in
WSe and MoS monolayers" manuscrip
Giant valley-selective Stark and Bloch-Siegert shifts of exciton resonances in WSe and MoS monolayers
In this letter we demonstrate that the valley degeneracy of exciton states in
monolayers of WSe and MoS can be lifted by the interaction with strong
circularly-polarized infrared pulses with durations of only few periods of the
electric field whose photon energy is much lower than the energy of the
excitonic transition. The observed valley-sensitive blue shifts of excitonic
absorption lines are consequences of optical Stark and Bloch-Siegert shifts
acting exclusively on the opposite valleys of the monolayer. We measured the
transient valley-selective changes of sample reflectivity for 1sA as well as
for 1sB exciton transitions corresponding to the two most intensive resonances
in the studied materials. For the studied phenomena we developed a theoretical
description based on semiconductor Bloch equations, which goes beyond the
simple two-level model used in previous investigations. The theoretical
approach takes into account Coulomb many-body effects in the monolayer and
provides a unified description of both types of shifts. The detected
room-temperature excitonic energy shifts of up to 30\,meV pave the way for
practical applications of these effects.Comment: 6 pages, 3 figures, the manuscript is related to the "Semiconductor
Bloch equation analysis of optical Stark and Bloch-Siegert shifts in
monolayers WSe and MoS" manuscrip
Neutral and charged dark excitons in monolayer WS
Low temperature and polarization resolved magneto-photoluminescence
experiments are used to investigate the properties of dark excitons and dark
trions in a monolayer of WS encapsulated in hexagonal BN (hBN). We find
that this system is an -type doped semiconductor and that dark trions
dominate the emission spectrum. In line with previous studies on WSe, we
identify the Coulomb exchange interaction coupled neutral dark and grey
excitons through their polarization properties, while an analogous effect is
not observed for dark trions. Applying the magnetic field in both perpendicular
and parallel configurations with respect to the monolayer plane, we determine
the g-factor of dark trions to be -8.6. Their decay rate is close to 0.5
ns, more than 2 orders of magnitude longer than that of bright excitons.Comment: 6 pages, 6 figures, supplemental materia