User interface development and metadata considerations for the Atmospheric Radiation Measurement (ARM) archive

This paper will discuss user interface development and the structure and use of metadata for the Atmospheric Radiation Measurement (ARM) Archive. The ARM Archive, located at Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee, is the data repository for the U.S. Department of Energy's (DOE's) ARM Project. After a short description of the ARM Project and the ARM Archive's role, we will consider the philosophy and goals, constraints, and prototype implementation of the user interface for the archive. We will also describe the metadata that are stored at the archive and support the user interface

Global transportation cost modeling for long-range planning

The US Department of Energy (DOE) is preparing to perform significant remediation activities of the sites for which it is responsible. To accomplish this, it is preparing a corporate global plan focused on activities over the next decade. Significant in these planned activities is the transportation of the waste arising from the remediation. The costs of this transportation are expected to be large. To support the initial assessment of the plan, a cost estimating model was developed, peer-reviewed against other available packaging and transportation cost data, and applied to a significant number of shipping campaigns of radioactive waste. This cost estimating model, known as the Ten-year Plan Transportation Cost Model (TEPTRAM), can be used to model radioactive material shipments between DOE sites or from DOE sites to non-DOE destinations. The model considers the costs for (a) recovering and processing of the wastes, (b)packaging the wastes for transport, and (c) the carriage of the waste. It also provides a rough order of magnitude estimate of labor costs associated with preparing and undertaking the shipments. At the user`s direction, the model can also consider the cost of DOE`s interactions with its external stakeholders (e.g., state and local governments and tribal entities) and the cost associated with tracking and communicating with the shipments. By considering all of these sources of costs, it provides a mechanism for assessing and comparing the costs of various waste processing and shipping campaign alternatives to help guide decision-making. Recent analyses of specific planned shipments of transuranic (TRU) waste which consider alternative packaging options are described. These analyses show that options are available for significantly reducing total costs while still satisfying regulatory requirements

Sum rules and electrodynamics of high-Tc cuprates in the pseudogap state

We explore connections between the electronic density of states (DOS) in a conducting system and the frequency dependence of the scattering rate $1/\tau(\omega)$ inferred from infrared spectroscopy. We show that changes in the DOS upon the development of energy gaps can be reliably tracked through the examination of the $1/\tau(\omega)$ spectra using the sum rules discussed in the text. Applying this analysis to the charge dynamics in high-$T_c$ cuprates we found radically different trends in the evolution of the DOS in the pseudogap state and in the superconducting state.Comment: 4 pages, 3 figure

Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.Comment: 7 pages, 3 figure

Nonmonotonic d_{x^2-y^2} Superconducting Order Parameter in Nd_{2-x}Ce_xCuO_4

Low energy polarized electronic Raman scattering of the electron doped superconductor Nd_1.85Ce_0.15CuO_4 (T_c=22 K) has revealed a nonmonotonic d_{x^2-y^2} superconducting order parameter. It has a maximum gap of 4.4 k_BT_c at Fermi surface intersections with antiferromagnetic Brillouin zone (the ``hot spots'') and a smaller gap of 3.3 k_BT_c at fermionic Brillouin zone boundaries. The gap enhancement in the vicinity of the ``hot spots'' emphasizes role of antiferromagnetic fluctuations and similarity in the origin of superconductivity for electron- and hole-doped cuprates.Comment: 4 pages, 4 figure

An angle-resolved photoemission spectral function analysis of the electron doped cuprate Nd_1.85Ce_0.15CuO_4

Using methods made possible by recent advances in photoemission technology, we perform an indepth line-shape analysis of the angle-resolved photoemission spectra of the electron doped (n-type) cuprate superconductor Nd_1.85Ce_0.15CuO_4. Unlike for the p-type materials, we only observe weak mass renormalizations near 50-70 meV. This may be indicative of smaller electron-phonon coupling or due to the masking effects of other interactions that make the electron-phonon coupling harder to detect. This latter scenario may suggest limitations of the spectral function analysis in extracting electronic self-energies when some of the interactions are highly momentum dependent.Comment: 8 pages, 5 figure

Temperature-dependent magnetization in diluted magnetic semiconductors

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga_{1-x}Mn_xAs with 0.03 < x < 0.07, whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as Ge_{1-x}Mn_x. We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.Comment: 17 pages, 15 figure

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes

Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States

Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T_C. This conclusion is based on the calculation of the resistivity vs. temperature, that shows a soft metal to insulator transition near T_C, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS and manganites are also discussed.Comment: Revtex4, 20 figures. References updated, minor changes to figures and tex

Interplane Transport and Superfluid Density in Layered Superconductors

We report on generic trends in the behavior of the interlayer penetration depth $\lambda_c$ of several different classes of quasi two-dimensional superconductors including cuprates, Sr$_2$RuO$_4$, transition metal dichalcogenides and organic materials of the $(BEDT-TTF)_2X$-series. Analysis of these trends reveals two distinct patterns in the scaling between the values of $\lambda_c$ and the magnitude of the DC conductivity: one realized in the systems with a Fermi liquid (FL) ground state and the other seen in systems with a marked deviation from the FL response. The latter pattern is found primarily in under-doped cuprates and indicates a dramatic enhancement (factor $\simeq 10^2$) of the energy scale $\Omega_C$ associated with the formation of the condensate compared to the data for the FL materials. We discuss implications of these results for the understanding of pairing in high-$T_c$ cuprates.Comment: 4 pages, 2 figure