57 research outputs found

    Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers

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    The photogenerated carrier-induced band-edge modifications of beryllium single delta-doped GaAs layers com comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures,5974634463
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